M14D1G8128A-1.6BG2P

The M14D1G8128A-1.6BG2P is a DDR2 SDRAM die organized as 128M × 8 (1.074 Gbit) delivering a 600 MHz clock frequency (DDR2-1200 data rate per product grading). Built on an internal pipelined double-data-rate architecture with 8-bank operation and an on-chip DLL, this device addresses designs requiring parallel DDR2 memory at 1.8 V nominal supply levels.

Designed and manufactured by ESMT for commercial-grade applications, the device is JEDEC-qualified, supports typical DDR2 features such as differential DQS and clock inputs, and is supplied as a 60-ball FBGA die-only option for board-level integration. Operating range is specified from 0 °C to 95 °C with VDD in the 1.7 V–1.9 V window.

Key Features

• Core Architecture Internal pipelined double-data-rate architecture enabling two data accesses per clock cycle and 8-bank operation for efficient memory interleaving.
• Memory Organization 128M × 8 organization totaling 1.074 Gbit capacity, providing a standard DDR2 memory footprint for parallel system interfaces.
• Performance and Timing Clock frequency rated at 600 MHz (DDR2-1200 grade), with access and write cycle times specified at 15 ns and support for CAS latencies 3–7 and additive latency 0–6 as documented in the series datasheet.
• Data Interface Bi-directional differential data strobe (DQS / DQS̄) with differential clock inputs (CLK / CLK̄), SSTL_18 interface signaling, and data I/O transitions on both edges of DQS for DDR operation.
• Signal Integrity & Termination On-Die Termination (ODT) and Off-Chip-Driver (OCD) impedance adjustment are supported; device documentation lists ODT settings including 50/75/150 Ω for improved signal quality.
• Refresh and Power Management Auto and self-refresh support with documented refresh cycles (8192 cycles/64 ms at 0 °C–85 °C; faster interval at higher temperatures) and high-temperature self-refresh enable to maintain data integrity.
• Voltage Specified supply range VDD = 1.7 V–1.9 V (datasheet nominal VDD = 1.8 V ±0.1 V) with separate VDDQ and VDDL domains as defined in the pinout.
• Package & Mounting Supplied as a 60-FBGA die-only offering for surface-mount integration; speed grade indicated for die-only versions in ordering information.
• Commercial Grade & Qualification JEDEC-qualified commercial-grade memory with an operating temperature range of 0 °C to 95 °C as specified.

Typical Applications

• Embedded Systems Memory expansion for embedded designs that require a 1.074 Gbit DDR2 memory organized as 128M × 8 and operate at 1.8 V supply levels.
• Consumer and Industrial Electronics Boards and modules where JEDEC-standard DDR2 SDRAM at up to 600 MHz clocking is required within a 0 °C–95 °C operating window.
• OEM Module Integration Use as a die in custom memory module or board-level integrations targeting DDR2-1200 data rates and FBGA assembly processes.

Unique Advantages

• DDR2 Performance at 600 MHz Supports 600 MHz clocking (DDR2-1200 grade) to deliver doubled data throughput per clock edge compared with single-rate memories.
• Flexible Timing Options Multiple CAS and additive latency settings (CAS 3–7, additive 0–6) allow designers to trade latency and timing for platform-specific optimization.
• Signal Integrity Features On-Die Termination and OCD impedance adjustment provide configurability to improve signal integrity on high-speed traces.
• Standard Compliance JEDEC-standard DDR2 implementation ensures predictable behavior and interoperability with DDR2-compatible memory controllers.
• Thermal and Refresh Controls Documented refresh rates and high-temperature self-refresh support help maintain data retention across the published operating temperature range.

Why Choose M14D1G8128A-1.6BG2P?

The M14D1G8128A-1.6BG2P provides a compact, JEDEC-compliant DDR2 SDRAM die solution offering 1.074 Gbit capacity in a 128M × 8 organization with a 600 MHz clock rating and support for standard DDR2 timing and signal integrity features. Its documented voltage domains, ODT options, and refresh behavior make it suitable for designs that require predictable DDR2 operation at 1.8 V nominal and commercial temperature ranges.

This part is appropriate for engineers and OEMs integrating DDR2 memory at the die level who need the documented timing flexibility, termination options, and JEDEC conformance provided by an ESMT DDR2 family device.

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