M14D1G1664A-1(2P)

The M14D1G1664A-1(2P) is a DDR2 SDRAM device implementing a pipelined, double-data-rate architecture with on-chip DLL and differential clock inputs for synchronous, high-throughput memory access. It provides a 1.074 Gbit memory organized as 64M × 16 with support for up to 667 MHz clock operation and a compact 84-ball BGA surface-mount package.

Designed to meet JEDEC standards, this commercial-grade part targets systems that require predictable DDR2 performance, signal integrity features and standard JEDEC timing options for CAS latency and burst control.

Key Features

• Core Architecture Internal pipelined double-data-rate operation with on-chip DLL and differential clock inputs to align data (DQ/DQS) transitions with CLK.
• Memory Organization & Capacity 1.074 Gbit capacity organized as 64M × 16 with internal 8-bank operation for parallelism and efficient command scheduling.
• Performance Clock frequency up to 667 MHz with access time listed at 15 ns and write cycle time (word/page) of 15 ns.
• JEDEC Timings Supports CAS latencies 3–7 and additive latencies 0–6, and burst lengths of 4 and 8 with sequential and interleave burst types.
• Signal Integrity & I/O Bi-directional differential data strobe (DQS/ DQS) with optional single-ended operation, data mask (DM) for write masking, and on-die termination (ODT) including 50/75/150 Ω options.
• Power & Interface Specified VDD = 1.8V ±0.1V and VDDQ = 1.8V ±0.1V with SSTL_18 interface signaling and off-chip-driver (OCD) impedance adjustment.
• Reliability & Refresh Auto and self-refresh support with standard JEDEC refresh rates (8192 cycles/64 ms at 0°C–85°C; 8192 cycles/32 ms at >85°C–95°C).
• Package & Temperature 84-ball BGA (surface mount) with operating temperature range 0°C to 95°C; RoHS compliant and commercial grade.

Unique Advantages

• JEDEC-compliant timing options: Allows designers to select standard CAS and additive latencies (3–7 and 0–6) to match system timing and performance needs.
• Differential DQS and CLK support: Improves timing alignment and read/write data capture for reliable high-speed transfers.
• On-die termination and OCD: Integrated ODT and off-chip-driver impedance adjustment reduce external termination requirements and help maintain signal integrity on high-speed memory buses.
• Compact BGA footprint: 84-ball BGA surface-mount package saves PCB area and supports dense system designs.
• Commercial temperature range with defined refresh behavior: Specified operation from 0°C to 95°C with defined refresh intervals for stable retention across the range.

Why Choose M14D1G1664A-1(2P)?

The M14D1G1664A-1(2P) delivers JEDEC-standard DDR2 performance in a compact 84-ball BGA package, combining on-chip DLL, differential clocking, and selectable ODT settings to address high-speed memory interface requirements. Its supported timing options and 64M × 16 organization make it suitable for designs that require predictable DDR2 behavior and straightforward integration into SSTL_18 systems.

As a commercial-grade, RoHS-compliant DDR2 SDRAM device with documented refresh behavior and signal-integrity features, it is well-suited for embedded and system applications that need a proven DDR2 memory building block with clear timing and electrical parameters.

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