M14D1G1664A-1.8BG2P

1Gb DDR2 SDRAM
Part Description

DDR2 SDRAM 1Gbit 533MHz 1.8V 84‑FBGA

Quantity 596 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package84-FBGA (8x12.5)Memory FormatDRAMTechnologyDRAM
Memory Size1 GbitAccess Time15 nsGradeCommercial
Clock Frequency533 MHzVoltage1.7V ~ 1.9VMemory TypeVolatile
Operating Temperature0°C – 95°CWrite Cycle Time Word Page15 nsPackaging84-FBGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization64M x 16
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.32

Overview of M14D1G1664A-1.8BG2P – DDR2 SDRAM 1Gbit 533MHz 1.8V 84‑FBGA

The M14D1G1664A-1.8BG2P is a 1.074‑Gbit DDR2 SDRAM organized as 64M × 16, offering a pipelined double‑data‑rate architecture for two data transfers per clock. The device targets DDR2 memory implementations that require JEDEC‑compliant DDR2 functionality with on‑chip DLL, differential clocking and SSTL_18 interface signaling.

With a 533 MHz clock grade (DDR2‑1066 operation), on‑die termination and programmable impedance features, this FBGA‑packaged memory is suited to compact designs requiring high‑speed volatile memory in a commercial temperature grade.

Key Features

  • DDR2 Pipelined Architecture Internal pipelined double‑data‑rate architecture enables two data accesses per clock cycle and supports burst lengths of 4 and 8.
  • Density & Organization 1.074 Gbit capacity organized as 64M × 16 (8M × 16 × 8 banks), providing a standard DRAM footprint for DDR2 implementations.
  • Clocking & Timing 533 MHz clock frequency (DDR2‑1066 grade); CAS latency options 3, 4, 5, 6, 7 and additive latency 0–6 for flexible timing configurations.
  • Power & Voltage VDD = 1.8 V ±0.1 V (device specification) with supported supply range 1.7 V to 1.9 V for core and I/O domains.
  • Data Strobe & Interface Bi‑directional differential DQS/DQS strobe with optional single‑ended operation; differential CLK/CLK inputs and SSTL_18 I/O interface.
  • Signal Integrity Controls On‑Die Termination (ODT) and Off‑Chip‑Driver (OCD) impedance adjustment with ODT options (50/75/150 Ω) to improve signal integrity.
  • Refresh & Power Management Auto and self‑refresh support with JEDEC refresh cycles: 8192 cycles/64 ms (0 °C ≤ Tc ≤ +85 °C) and 8192 cycles/32 ms (+85 °C < Tc ≤ +95 °C); high temperature self‑refresh rate enable.
  • Package & Temperature 84‑ball FBGA package (8 mm × 12.5 mm body, 0.8 mm ball pitch); commercial operating temperature range 0 °C to 95 °C.
  • Standards & Qualification JEDEC standard DDR2 SDRAM compliance as specified by ESMT for the M14D1G1664A family.

Typical Applications

  • DDR2 system memory — Use as primary or expandable system DRAM in DDR2‑compatible platforms requiring 1Gbit memory in a compact FBGA package.
  • Embedded and commercial devices — Integrate into commercial embedded designs that need JEDEC‑compliant DDR2 performance with programmable timing and ODT.
  • Memory interface development and evaluation — Suitable for prototyping and validating DDR2 interface timing, ODT and DQS timing behavior in lab and development environments.

Unique Advantages

  • Flexible timing configuration — Multiple CAS and additive latency options (CAS 3–7, AL 0–6) allow tuning for performance and system compatibility.
  • Robust signal integrity features — On‑die termination and OCD impedance adjustment (50/75/150 Ω) reduce the need for complex external termination networks.
  • Compact, industry‑standard package — 84‑FBGA (8 × 12.5 mm) minimizes board area while preserving standard BGA routing practices.
  • Wide commercial operating window — Supports 0 °C to 95 °C operation and JEDEC refresh options for reliable operation across commercial environments.
  • Standardized power domains — 1.8 V supply (VDD/VDDQ) with defined tolerance simplifies power‑rail design for DDR2 systems.

Why Choose M14D1G1664A-1.8BG2P?

The M14D1G1664A-1.8BG2P delivers a JEDEC‑compliant DDR2 memory building block that balances density, timing flexibility and signal integrity features in a compact 84‑FBGA footprint. Its 1.074‑Gbit organization and 533 MHz grade enable DDR2‑1066 data transfer capability while on‑die termination, OCD and DLL support help simplify high‑speed interface design.

This device is well suited to designers and integrators building commercial DDR2 platforms who require configurable latency options, standardized SSTL_18 signaling and the thermal and refresh behaviors documented for reliable operation across typical commercial environments.

Request a quote or submit an inquiry to receive pricing and availability for the M14D1G1664A-1.8BG2P and support for volume or evaluation requirements.

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