M14D1G1664A-1.5BG2P

The M14D1G1664A-1.5BG2P is a 1.074 Gbit DDR2 SDRAM organized as 64M × 16, implementing an internal pipelined double‑data‑rate architecture. It operates at a 667 MHz clock rate (DDR2‑1333 data rate) and is supplied at 1.8 V nominal.

Designed for applications that require parallel DDR2 system memory in a compact surface‑mount package, this JEDEC‑compatible device combines standard DDR2 timing options and on‑die signal features to support reliable high‑speed data transfers within its 0 °C to 95 °C operating range.

Key Features

• Density & Organization — 1.074 Gbit capacity arranged as 64M × 16 bits for parallel DDR2 memory implementation.
• Performance — 667 MHz clock frequency (DDR2‑1333). Typical access and write cycle times are specified at 15 ns.
• Voltage & Interface — VDD / VDDQ = 1.8 V ±0.1 V (operating range 1.7 V to 1.9 V) with SSTL_18 interface signaling.
• Latency & Burst Options — CAS latency settings of 3, 4, 5, 6, 7 and additive latency 0–6; burst length of 4 or 8 and selectable sequential/interleave burst types.
• Data Strobe & Clocking — Bi‑directional differential DQS/ DQS strobe (LDQS/UDQS available for byte lanes); differential CLK/CLK inputs and on‑chip DLL with duty cycle corrector for timing alignment.
• Signal Integrity — On‑Die Termination (ODT) with selectable 50/75/150 Ω settings and Off‑Chip‑Driver (OCD) impedance adjustment to improve high‑speed signal quality.
• Refresh & Self‑Refresh — Auto and self‑refresh support. Refresh cycle: 8192 cycles/64 ms (7.8 μs interval) at 0 °C ≤ Tc ≤ +85 °C, and 8192 cycles/32 ms (3.9 μs interval) at +85 °C < Tc ≤ +95 °C.
• Package & Mounting — 84‑ball FBGA surface‑mount package (8 mm × 12.5 mm body, 0.8 mm ball pitch).
• Compliance & Grade — JEDEC standard DDR2 implementation; commercial grade, RoHS compliant.

Typical Applications

• Embedded memory for computing platforms — Use as parallel DDR2 system memory where 64M × 16 organization and DDR2‑1333 throughput are required.
• High‑speed buffer memory — Suitable for designs needing fast read/write cycles and DDR2 timing flexibility (CAS and additive latency options).
• Compact board‑level implementations — 84‑ball FBGA package supports high‑density surface‑mount designs with constrained PCB area.

Unique Advantages

• High effective bandwidth — DDR2‑1333 (667 MHz clock) operation provides double‑data‑rate transfers per clock edge for higher throughput.
• Flexible timing support — Multiple CAS and additive latency options plus burst control let designers tune performance to system timing requirements.
• Signal integrity features — On‑Die Termination (50/75/150 Ω) and OCD impedance adjustment improve signal margins at high speeds.
• Industry standard compatibility — JEDEC‑compliant DDR2 architecture and SSTL_18 interface simplify integration into standard DDR2 memory subsystems.
• Compact, surface‑mount package — 84‑ball FBGA (8 mm × 12.5 mm) enables dense board layouts while maintaining accessibility for parallel memory interfaces.
• Temperature and supply tolerance — Commercial‑grade operation across 0 °C to 95 °C and 1.7 V–1.9 V supply range supports a variety of system environments.

Why Choose M14D1G1664A-1.5BG2P?

The M14D1G1664A-1.5BG2P provides a JEDEC‑compatible DDR2 SDRAM solution combining 1.074 Gbit density, DDR2‑1333 performance, and on‑die signal features such as ODT and DLL. Its configurable timing options and SSTL_18 interface make it suitable for designers who require predictable, standards‑based parallel memory behavior in a compact 84‑ball FBGA package.

As a commercial‑grade, RoHS‑compliant component from ESMT, this device is appropriate for designs that need standard DDR2 functionality, configurable timing, and board‑level density while operating within the specified 0 °C to 95 °C and 1.7 V–1.9 V ranges.

Request a quote or submit an RFQ today to check availability and lead times for M14D1G1664A-1.5BG2P for your next design.