M13S2561616A-4BIG2T

The M13S2561616A-4BIG2T is an industrial-grade DDR SDRAM memory device organized as 4M × 16, providing 268.4 Mbit of volatile storage in a 60‑ball BGA package. It implements a double-data-rate architecture to deliver two data transfers per clock cycle at a 250 MHz clock frequency (DDR500 timing).

Designed for board‑level integration in temperature‑sensitive systems, this JEDEC‑qualified DRAM supports industry features such as differential clock inputs, bi‑directional data strobes (DQS), DLL alignment, selectable CAS latency, and flexible burst modes for burst lengths of 2, 4, or 8.

Key Features

• Memory Organization and Capacity 4M × 16 organization with a reported memory size of 268.4 Mbit for compact board‑level storage.
• DDR Architecture Double‑data‑rate operation (two transfers per clock) supporting a 250 MHz clock for high effective data throughput.
• Data Strobe and Clocking Bi‑directional DQS signals with DLL alignment; differential clock inputs (CLK and CLKB) for robust timing.
• Latency and Burst Flexibility CAS Latency options of 2, 2.5, and 3 with burst types sequential and interleave; burst lengths of 2, 4, and 8.
• Read/Write Timing Typical access time of 10 ns and write cycle time (word/page) of 15 ns as specified.
• Power and I/O VDD / VDDQ nominal 2.5 V (±0.2 V) with an operational supply range listed as 2.3 V to 2.7 V; 2.5 V I/O (SSTL_2 compatible).
• Refresh and Power Management 7.8 μs refresh interval with Auto and Self refresh support for data integrity during idle periods.
• Package and Mounting 60‑ball BGA (surface mount) package for compact PCB integration and reliable soldered connections.
• Industrial Temperature Range Operation from −40 °C to 85 °C for deployment in industrial environments.
• Standards and Qualification JEDEC qualification noted for standard DDR SDRAM behavior and interfaces.

Typical Applications

• Industrial Embedded Systems — Memory for controllers and embedded platforms that require operation across −40 °C to 85 °C.
• Communications and Networking Equipment — Board‑level buffer and working memory where DDR throughput and JEDEC behavior are required.
• Data Buffering and Frame Storage — Short‑term volatile storage using selectable burst modes and CAS latencies for timing flexibility.

Unique Advantages

• Industrial Temperature Rating: Rated for −40 °C to 85 °C, supporting deployment in temperature‑challenging environments.
• DDR500 Performance: 250 MHz clock with double‑data‑rate transfers provides higher effective bandwidth than single‑data‑rate DRAM at the same clock.
• Flexible Timing Modes: CAS latency choices and multiple burst lengths allow tuning of latency versus throughput to match system needs.
• SSTL_2‑Compatible I/O: 2.5 V I/O and VREF support simplify integration with SSTL_2 signaling domains.
• Compact BGA Package: 60‑ball BGA surface‑mount package reduces PCB area and supports dense board layouts.
• JEDEC Qualification: Standardized DDR behavior and timing conventions ease system validation and memory controller configuration.

Why Choose M13S2561616A-4BIG2T?

The M13S2561616A-4BIG2T combines DDR double‑data‑rate architecture with industrial temperature capability and JEDEC‑aligned signaling to serve designs that need compact, board‑level volatile storage with selectable timing and burst options. Its 4M × 16 organization, differential clocking, DQS strobes, DLL alignment, and SSTL_2 I/O support make it a practical choice for embedded and communications systems where predictable DDR behavior and rugged operating range matter.

This device is suited to engineers and procurement teams designing industrial electronics, networking hardware, and systems requiring reliable DDR memory in a 60‑BGA package. Its combination of voltage range, refresh support, and timing flexibility offers straightforward integration into systems that require robust, standard DDR SDRAM functionality.

Request a quote or submit a purchase inquiry to obtain pricing and availability for the M13S2561616A-4BIG2T for your next design.