M13S2561616A-4BG2T

The M13S2561616A-4BG2T is a DDR SDRAM device from ESMT organized as 4M × 16 with a memory capacity listed in specifications as 268.4 Mbit and designed for high-speed parallel memory applications. It implements a double-data-rate architecture with bi-directional data strobe (DQS), differential clock inputs and a DLL to align data timing, addressing the needs of systems requiring synchronized, burst-oriented memory transfers.

Designed for commercial temperature operation and surface-mount assembly, this part suits board-level designs that require a compact 60-ball BGA package, JEDEC qualification and RoHS compliance while operating at a nominal 2.5 V supply range.

Key Features

• Core / Memory Architecture Double-data-rate operation with four internal banks and organization of 4M × 16 provides burst access modes and banked memory operation for efficient read/write sequencing.
• Timing & Performance Supports up to 250 MHz clock frequency (DDR500), CAS latencies 2 / 2.5 / 3, burst lengths 2 / 4 / 8, an access time of 10 ns and a write cycle time (word/page) of 15 ns for responsive, burst-oriented throughput.
• Data Integrity & Timing Alignment Bi-directional data strobe (LDQS/UDQS) with DQS edge-aligned on READs and center-aligned on WRITEs, plus an internal DLL to align DQ/DQS with CLK transitions, simplifying timing closure for synchronous systems.
• Interface & Signaling Parallel memory interface with differential CLK/CLK inputs and data mask (DM) support for write masking; 2.5 V I/O compatible with SSTL_2 signaling levels per datasheet guidance.
• Power & Supply VDD/VDDQ operating range specified as 2.3 V to 2.7 V (nominal 2.5 V ±0.2 V), enabling operation within common DDR supply domains.
• Package & Mounting Surface-mount 60-ball BGA (BGA60) package; ball-grid layout and compact footprint support high-density board designs.
• Operating Conditions & Reliability Commercial grade with JEDEC qualification, RoHS compliance and an operating ambient temperature range of 0 °C to 70 °C; supports auto and self refresh with a 7.8 µs refresh interval as specified.

Unique Advantages

• High-speed DDR operation: 250 MHz clock support (DDR500) enables double-data-rate transfers for higher effective bandwidth within a parallel memory interface.
• Deterministic timing features: On-die DLL and DQS alignment reduce timing margin requirements and simplify integration in synchronous systems.
• Flexible burst mechanics: Multiple CAS latency and burst length options (2/2.5/3 and 2/4/8) allow tuning for system latency and throughput trade-offs.
• Compact BGA footprint: 60-ball BGA packaging supports compact board layouts and surface-mount assembly for space-constrained designs.
• Standards-oriented signaling: 2.5 V I/O and SSTL_2 compatibility provide predictable electrical behavior with common DDR signaling environments.
• Regulatory & qualification alignment: JEDEC qualification and RoHS compliance address common procurement and environmental requirements for commercial products.

Why Choose M13S2561616A-4BG2T?

The M13S2561616A-4BG2T is positioned for designers who need a compact, JEDEC-qualified DDR SDRAM device offering DDR500-class operation in a 60-ball BGA. Its combination of DLL-based timing alignment, DQS strobing, selectable CAS latency and burst modes gives engineers the timing control required for synchronous, burst-oriented memory systems.

With a 2.3 V–2.7 V supply range, SSTL_2-compatible I/O, RoHS compliance and a commercial operating temperature window, this device provides a balanced option for cost-sensitive, board-level memory implementations where compact package, predictable timing and standards-based signaling are key considerations.

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