M13S128168A-6TG2S
| Part Description |
DDR SDRAM 128Mbit 2Mx16 166MHz 66-TSOPII Commercial |
|---|---|
| Quantity | 1,060 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 66-TSOPII | Memory Format | DRAM | Technology | DRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 15 ns | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C – 70°C | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSOPII | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 2M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.02 |
Overview of M13S128168A-6TG2S – DDR SDRAM 128Mbit 2Mx16 166MHz 66-TSOPII Commercial
The M13S128168A-6TG2S from ESMT is a commercial-grade DDR SDRAM device organized as 2M × 16 with a DDR333 (166 MHz) interface and a 66‑pin TSOPII surface-mount package. It implements a double-data-rate architecture with four internal banks and supports standard DDR features for system memory integration.
Designed for commercial applications requiring JEDEC-qualified DDR operation, the device delivers synchronous DDR timing, SSTL_2-compatible I/O, and standard refresh modes to support reliable data buffering and system memory needs within a 0 °C to 70 °C operating range.
Key Features
- DDR Architecture Double-data-rate SDRAM with two data transfers per clock cycle and four-bank operation for improved command/row management and throughput.
- Memory Organization Organized as 2M × 16, providing the memory structure used for system-level DDR implementations.
- Clock and Strobe Differential clock inputs (CLK/CLK̄) and bi-directional data strobe (DQS) with DLL alignment to synchronize DQ and DQS transitions with clock edges.
- Timing Options CAS Latency selectable at 2, 2.5, or 3; selectable burst lengths of 2, 4, or 8; access and write cycle times listed at 15 ns.
- I/O and Signal Compatibility 2.5 V I/O compatible with SSTL_2 signaling; data mask (DM) support for write masking and DQS alignment center for writes/edge for reads.
- Power and Voltage VDD and VDDQ nominally 2.5 V (2.5 V ±0.2 V); operating supply range specified as 2.3 V to 2.7 V.
- Refresh and Reliability JEDEC-qualified device with 15.6 μs refresh interval, supporting auto and self-refresh modes for data retention.
- Package and Mounting 66‑pin TSOPII (surface-mount) package suitable for compact board-level DDR footprints; supplier device package listed as 66‑TSOPII.
- Commercial Temperature Grade Operating ambient temperature range 0 °C to 70 °C for commercial applications.
Typical Applications
- System Memory Integration Implement DDR333 (166 MHz) system memory where a 2M × 16 DDR SDRAM footprint is required.
- Board-Level Memory Expansion Add DDR SDRAM capacity in compact, surface-mount designs using the 66‑TSOPII package.
- Commercial Electronics Use in commercial-grade electronics operating within 0 °C to 70 °C that require JEDEC-compliant DDR operation and standard refresh management.
Unique Advantages
- DDR Double-Data-Rate Throughput: Two data transfers per clock cycle increase effective data bandwidth versus single-edge SDRAM at the same clock frequency.
- DQS and DLL Alignment: Bi-directional DQS with DLL alignment improves signal timing integrity for both reads and writes, simplifying interface timing design.
- Flexible Latency and Burst Modes: Multiple CAS latency and burst-length options allow tuning of performance and access patterns to match system requirements.
- SSTL_2-Compatible I/O: 2.5 V I/O compatibility supports standard DDR signaling stacks and typical board-level interfaces.
- JEDEC Qualification and Refresh Support: JEDEC-qualified device behavior with auto and self-refresh and a specified 15.6 μs refresh interval for predictable retention management.
- Compact TSOPII Package: 66‑pin TSOPII surface-mount packaging enables dense board layouts and straightforward replacement in existing TSOP DDR footprints.
Why Choose M13S128168A-6TG2S?
The M13S128168A-6TG2S delivers a balanced DDR SDRAM solution for commercial designs that require JEDEC-compliant DDR architecture, selectable timing modes, and SSTL_2-compatible signaling in a 66‑pin TSOPII package. Its DLL-based DQS alignment, flexible latency options, and standard refresh features make it suitable for systems that need predictable DDR333 (166 MHz) memory behavior within a 0 °C to 70 °C operating window.
This device is ideal for engineers and procurement teams integrating DDR SDRAM into compact, surface-mounted designs where JEDEC qualification, standard DDR functionality, and straightforward board-level integration are priority considerations.
Request a quote or submit a purchase inquiry to get pricing and availability for the M13S128168A-6TG2S and to discuss volume, lead times, or packaging options.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A