M12L5121632A-5T(2T)
| Part Description |
SDRAM 3.3V |
|---|---|
| Quantity | 1,109 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 54 pin TSOPII/ 54 Ball FBGA | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5 ns | Grade | Commercial | ||
| Clock Frequency | 200 MHz | Voltage | 2.5V | Memory Type | Volatile | ||
| Operating Temperature | 0°C – 70°C | Write Cycle Time Word Page | 10 ns | Packaging | 54 pin TSOPII/ 54 Ball FBGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.28 |
Overview of M12L5121632A-5T(2T) – SDRAM 3.3V
The M12L5121632A-5T(2T) is a synchronous DRAM device from ESMT organized as 32M × 16 bits (536,870,912 bits total) with a four-bank architecture. It implements standard SDRAM features—programmable burst length and latencies, sampled inputs on the clock edge, and JEDEC-standard 3.3V power supply—making it suitable for high-bandwidth, high-performance memory system applications.
Designed for surface-mount deployment, this module offers up to 200 MHz operation with parallel memory interface options in TSOP II or BGA packages, providing a compact, industry-standard memory building block for commercial embedded designs.
Key Features
- Core / Architecture Organized as 4 × 8,388,608 words by 16 bits (32M × 16) for a total of 536,870,912 bits; four-bank synchronous DRAM operation enables efficient memory transactions.
- Performance Maximum clock frequency up to 200 MHz with access time as low as 5 ns and a write cycle time (word/page) of 10 ns for predictable timing in synchronous systems.
- Programmable Timing & Burst Supports CAS Latency 2 and 3, programmable burst lengths (1, 2, 4, 8, and full page) and burst types (sequential & interleave) to match system bandwidth and latency requirements.
- Interface & Signaling Parallel memory interface with LVTTL-compatible, multiplexed address pins; all inputs sampled on the positive edge of the system clock for synchronous operation.
- Power JEDEC-standard 3.3V power supply as specified in the datasheet.
- System Features DQM masking, auto and self refresh support, and a 64 ms refresh period (8K cycle) to maintain data integrity during operation.
- Package & Mounting Available in 54-pin TSOP II or 54-ball FBGA packages; surface-mount mounting type for compact PCB integration.
- Environmental & Qualification Commercial grade operation with JEDEC qualification and RoHS-compliant (Pb-free) construction; operating temperature range 0 °C to 70 °C.
Typical Applications
- High-bandwidth memory subsystems — Provides synchronous, banked DRAM capacity and programmable burst/latency options for systems that require predictable high-throughput memory access.
- Embedded systems — Surface-mount TSOP II and BGA package options enable compact board-level integration in embedded designs that need standard SDRAM capacity and timing control.
- Commercial electronics — JEDEC-qualified, RoHS-compliant construction and commercial temperature grading make this device suitable for a range of consumer and industrial electronic products requiring SDRAM storage.
Unique Advantages
- Synchronous four-bank architecture: Enables concurrent bank operation and predictable cycle control through the system clock for efficient throughput in multi-threaded memory access patterns.
- Flexible timing and burst control: CAS Latency 2/3 and multiple burst-length options allow designers to tune latency and transfer size to their application needs.
- Industry-standard supply and signaling: JEDEC-standard 3.3V supply and LVTTL-compatible inputs simplify system-level power and interface design.
- Compact package choices: Available in TSOP II and BGA packages for flexible board-level integration and space-constrained layouts.
- Data integrity features: DQM masking, auto/self-refresh and JEDEC refresh timing (64 ms/8K cycles) support reliable operation over extended runtime.
- Compliance and supply-chain readiness: Commercial grade with JEDEC qualification and RoHS-compliant (Pb-free) product options for standard production environments.
Why Choose M12L5121632A-5T(2T)?
The M12L5121632A-5T(2T) positions itself as a straightforward, JEDEC-standard SDRAM component that combines a large 536,870,912-bit density with synchronous operation and flexible timing controls. Its support for up to 200 MHz operation, programmable burst modes, and multiple CAS latencies makes it a practical choice for designers needing predictable, high-bandwidth memory behavior in commercial electronic systems.
This device is suitable for teams designing memory subsystems or embedded products that require standard SDRAM functionality, compact TSOP II or BGA packaging, and JEDEC/RoHS compliance. Its combination of capacity, timing flexibility, and package options supports scalable integration across a variety of commercial applications.
Request a quote or submit a product inquiry to obtain pricing, availability, and packaging options for the M12L5121632A-5T(2T).
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