M12L2561616A-7T(2T)

The M12L2561616A-7T(2T) from ESMT is a synchronous DRAM (SDRAM) device organized as 4 × 4,194,304 words by 16 bits, providing 268,435,456 bits (268.4 Mbit) of volatile memory. It implements a four-bank synchronous architecture with programmable burst lengths and latencies for use in high-bandwidth, high-performance memory system applications.

This part is offered in surface-mount 54-pin TSOP II and 54-ball BGA packages and is supplied in JEDEC-qualified commercial grade. The device supports burst read/write operation, DQM masking, auto/self refresh, and modes suitable for a range of board- and module-level memory subsystems.

Key Features

• Core & Memory Organization 268.4 Mbit capacity organized as 16M × 16 (4 × 4,194,304 × 16), with four internal banks for concurrent memory operations.
• Performance & Timing Specified for 143 MHz operation for the -7 variant; access time listed as 5 ns and write cycle (word/page) time of 14 ns. Supports CAS latency 2 and 3 for flexible timing control.
• Burst and Mode Control Programmable burst lengths (1, 2, 4, 8 and full page) and burst types (sequential and interleave) with MRS cycle programming for custom operation modes.
• Interface & Control Parallel memory interface with LVTTL-compatible multiplexed address lines; all inputs sampled on the rising edge of CLK. Includes DQM for data masking and supports burst read / single write operations.
• Refresh and Reliability Auto and self refresh supported with a 64 ms refresh period (8K cycles), and JEDEC qualification noted in the product data.
• Power Datasheet features reference a JEDEC-standard 3.3V power supply; the product specification lists a voltage supply value of 2.5V. This device is offered in RoHS-compliant / Pb-free configurations.
• Package & Temperature Available in 54-pin TSOP II and 54-ball BGA package options (surface mount); commercial operating temperature range 0 °C to 70 °C.

Typical Applications

• High-bandwidth memory subsystems — For systems that require synchronous, burst-capable DRAM organized into multiple banks to sustain streaming or bursty data throughput.
• Embedded and board-level designs — Surface-mount TSOP II and BGA package options simplify integration into board and module memory expansions.
• Consumer and industrial electronics — Commercial-grade SDRAM suitable for a range of high-performance memory tasks where JEDEC qualification is required.

Unique Advantages

• Four-bank architecture — Enables overlapping operations for improved effective throughput in burst and multi-access scenarios.
• Flexible burst and latency configuration — CAS latency options (2 & 3) and multiple burst lengths let designers tune performance for specific system timings.
• JEDEC qualification and RoHS compliance — Provides a clear, standards-based platform for integration and environmental compliance.
• Multiple package choices — 54-pin TSOP II and 54-ball BGA allow selection based on assembly and thermal/board constraints.
• Built-in refresh and masking features — Auto/self refresh and DQM data masking reduce host controller overhead and simplify memory management.

Why Choose M12L2561616A-7T(2T)?

The M12L2561616A-7T(2T) targets designers needing a synchronous DRAM with configurable burst behavior, multiple CAS latency options, and a four-bank organization for sustained data transfers. With JEDEC-qualified features, RoHS-compliant construction, and both TSOP II and BGA surface-mount package options, it is suited to a wide range of commercial memory system designs where predictable timing and flexible burst operation are required.

This device is appropriate for teams building high-bandwidth modules, embedded memory subsystems, or board-level expansions that require standard SDRAM functionality combined with programmable performance parameters and industry-standard packaging.

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