M12L2561616A-7BG2T

The M12L2561616A-7BG2T from ESMT is a synchronous high-data-rate DRAM organized as 4 × 4,194,304 words by 16 bits (268,435,456 bits). It implements a four-bank architecture and synchronous operation to support precise cycle control driven by the system clock.

Designed for commercial-grade memory system integration, this device targets high-bandwidth, high-performance memory applications that require programmable burst and latency options, JEDEC-standard 3.3V operation, and a compact 54-ball BGA package.

Key Features

• Memory Organization & Density — 268,435,456-bit density arranged as 4M × 16 with four internal banks for concurrent bank operation and data throughput management.
• Performance — Supports 143 MHz system clock with an access time of 5.4 ns and a write cycle time (word/page) of 14 ns.
• Synchronous DRAM Controls — JEDEC-standard synchronous DRAM with CAS latency options of 2 and 3, programmable burst lengths (1, 2, 4, 8 & full page), and burst types (sequential & interleave); all inputs sampled on the positive edge of CLK.
• Power & Voltage — JEDEC standard 3.3V supply with an operating voltage range of 3.0V to 3.6V; supports auto and self-refresh and a 64 ms refresh period (8K cycles).
• Interface & Control Signals — Parallel memory interface with standard control pins (CLK, CS, CKE, RAS, CAS, WE, BA0/1, A0–A12) and DQM for data masking.
• Package & Mounting — 54-ball BGA surface-mount package (BGA54, 8 mm × 8 mm × 1 mm body, 0.8 mm ball pitch) for compact board-level integration.
• Compliance & Grade — JEDEC-qualified device, Pb-free and RoHS-compliant; commercial grade with an operating temperature range of 0 °C to 70 °C.

Typical Applications

• High-bandwidth memory systems — Designed for use in high-performance memory subsystems where synchronous DRAM with programmable burst and latency is required.
• Commercial electronic systems — Suited to commercial-grade designs operating within 0 °C to 70 °C and using a 3.3V supply range.
• Compact board-level memory integration — 54-BGA package supports space-constrained PCB layouts requiring surface-mount memory devices.

Unique Advantages

• Flexible timing and burst modes — CAS latency selectable between 2 and 3 with multiple burst length and type options to match system throughput and latency requirements.
• Four-bank architecture — Internal bank structure enables interleaved operation and improved effective throughput for sequential and random accesses.
• JEDEC-standard power and refresh — 3.3V JEDEC standard supply with auto/self-refresh and standard 64 ms refresh period simplifies system memory management.
• Compact BGA footprint — 54-ball BGA (8 mm × 8 mm, 0.8 mm pitch) minimizes board area for dense system designs.
• Standards and environmental compliance — JEDEC-qualified and RoHS-compliant Pb-free construction aligns with industry manufacturing and environmental requirements.
• Parallel interface with standard controls — Standard control signals (CLK, CS, CKE, RAS, CAS, WE, BA, A0–A12) and DQM support integration with common memory controllers.

Why Choose M12L2561616A-7BG2T?

The M12L2561616A-7BG2T offers a balanced combination of density, synchronous operation, and flexible timing options in a compact BGA package. JEDEC qualification and standard 3.3V operation make it suitable for designers building high-bandwidth, commercial memory systems that require programmable burst and latency behavior.

With four internal banks, DQM data masking, and support for auto/self-refresh, this device provides the control features needed to integrate reliable synchronous DRAM into system designs while maintaining a small board footprint and industry-standard compliance.

Request a quote or submit a purchase inquiry to check availability and pricing for the M12L2561616A-7BG2T. Provide required order details and quantity to receive a formal response.