M12L2561616A-6BG2T

The M12L2561616A-6BG2T from ESMT is a synchronous DRAM device providing 268,435,456 bits of volatile memory organized as 4M × 16 with four internal banks. It implements a clocked, synchronous interface where all inputs are sampled on the positive edge of the system clock, enabling precise cycle control for high-bandwidth memory system applications.

Designed for systems requiring flexible timing and burst control, the device supports programmable CAS latencies, multiple burst lengths and burst types, while delivering JEDEC-standard 3.3V operation in a compact 54-ball BGA surface-mount package.

Key Features

• Core / Architecture Synchronous DRAM organized as 4,194,304 words × 16 bits with four internal banks for concurrent-bank operation.
• Memory Performance Clock frequency up to 166 MHz, typical access time 5.4 ns and write cycle time (word/page) of 12 ns; supports CAS latency 2 and 3.
• Burst and Access Modes Programmable burst lengths (1, 2, 4, 8 and full page) and burst types (sequential and interleave) with burst read single write operation and DQM masking.
• Timing and Refresh All inputs sampled on the positive edge of CLK; auto and self-refresh supported with a 64 ms refresh period (8K cycle).
• Interface and Logic Levels Parallel memory interface with LVTTL-compatible multiplexed address inputs for row/column addressing.
• Power JEDEC-standard 3.3V supply; operating supply range 3.0 V to 3.6 V.
• Package and Mounting Surface-mount 54-BGA (BGA54) package for compact board-level integration.
• Operating Range and Qualification Commercial grade operation from 0 °C to 70 °C and JEDEC qualification; RoHS-compliant (Pb‑free).

Typical Applications

• High-bandwidth memory subsystems Use where synchronous, clocked DRAM with programmable burst and latency options is required.
• Performance-oriented system designs Suitable for designs that need predictable, cycle-aligned memory transactions and refresh control.
• Compact board-level implementations The 54-BGA surface-mount package enables dense PCB layouts where board space is constrained.

Unique Advantages

• Precise synchronous operation: All inputs are sampled on the positive edge of CLK for deterministic timing and repeatable memory cycles.
• Flexible timing control: Programmable CAS latencies (2 & 3) and multiple burst length/type options let designers tailor performance to system needs.
• Four-bank organization: Banked architecture improves command concurrency and effective throughput in multi-bank access patterns.
• JEDEC and RoHS compliant: JEDEC-standard 3.3V operation and Pb‑free RoHS compliance support common industry requirements.
• Compact BGA packaging: 54-ball BGA reduces PCB footprint while supporting surface-mount assembly processes.
• Wide supply tolerance: Rated for 3.0 V to 3.6 V operation to accommodate typical 3.3V system rails.

Why Choose M12L2561616A-6BG2T?

The M12L2561616A-6BG2T combines a synchronous, banked DRAM architecture with programmable latencies and burst control to address a range of high-bandwidth memory system applications. Its JEDEC 3.3V compatibility, defined timing features and refresh control make it suitable for designs that require predictable, clock-aligned memory behavior.

Packaged in a compact 54-BGA surface-mount footprint and supplied by ESMT, this RoHS-compliant commercial-grade device is aimed at engineers and procurement teams integrating synchronous DRAM into space-conscious, performance-oriented systems.

Request a quote or submit a product inquiry to evaluate the M12L2561616A-6BG2T for your next memory subsystem design.