M12L2561616A-5TG2T

The M12L2561616A-5TG2T from ESMT is a 268,435,456‑bit synchronous high data rate DRAM organized as 4 × 4,194,304 words by 16 bits with four internal banks. It implements a synchronous design that samples inputs on the positive edge of the system clock and supports programmable burst length and latencies for precise cycle control.

Designed for high‑bandwidth, high‑performance memory system applications, this JEDEC‑qualified, Pb‑free device operates to 200 MHz and is supplied in a 54‑pin TSOP II surface‑mount package for compact board integration.

Key Features

• Core Architecture 4 × 4,194,304 words by 16 bits (4M ×16) organization with four banks for concurrent bank operation.
• Performance Maximum frequency 200 MHz with CAS latency options of 2 and 3; access time specified at 4.5 ns and write cycle time (word/page) at 10 ns.
• Burst and Transfer Modes Programmable burst lengths (1, 2, 4, 8 and full page) with sequential and interleave burst types; supports burst read single write operation.
• Interface and Control Parallel memory interface, LVTTL compatible with multiplexed address lines; all inputs sampled on CLK’s rising edge. Includes DQM masking, CS, RAS/CAS/WE control signals, and BA0/BA1 bank select.
• Refresh and Power Management Auto and self refresh supported with a 64 ms refresh period (8K cycle). CKE (clock enable) masks the system clock to freeze operation and supports power‑down standby behavior.
• Voltage and Supply JEDEC standard 3.3 V supply with operating range 3.0 V to 3.6 V.
• Package and Mounting 54‑lead TSOP II (surface mount) package; TSOPII 54L, 400 mil × 875 mil body with 0.8 mm pin pitch as specified in the package data.
• Compliance and Grade JEDEC qualification, commercial grade, and RoHS‑compliant / Pb‑free product.
• Operating Range Specified operating temperature range 0 °C to 70 °C.

Typical Applications

• High‑performance memory subsystems Used where synchronous, high data‑rate DRAM with programmable burst and latency is required for predictable throughput.
• Embedded systems and processors Suitable for designs that require JEDEC‑standard 3.3 V SDRAM with banked operation and precise cycle control.
• System designs requiring compact board integration 54‑pin TSOP II surface‑mount packaging enables dense PCB layouts while retaining full SDRAM functionality.

Unique Advantages

• Synchronous architecture for deterministic timing All inputs are sampled on the positive edge of the system clock, enabling precise cycle control in timed memory systems.
• Flexible performance configuration Programmable CAS latencies and multiple burst lengths let designers tune timing for target throughput and system timing budgets.
• Banked memory for concurrent access Four‑bank organization improves effective throughput for interleaved access patterns and multi‑threaded memory usage.
• Standard JEDEC supply and wide voltage tolerance 3.3 V nominal with a 3.0–3.6 V operating window supports standard system rails and simplifies power design.
• Power management features Auto/self refresh plus CKE‑controlled clock masking support lower power standby modes and predictable refresh behavior (64 ms/8K cycle).
• RoHS‑compliant, Pb‑free package Meets environmental compliance requirements while using industry‑standard TSOP II surface‑mount packaging.

Why Choose M12L2561616A-5TG2T?

The M12L2561616A-5TG2T positions itself as a JEDEC‑standard, commercial‑grade synchronous DRAM option for designers who need a 268‑Mbit, 4‑bank memory with programmable timing and burst control. Its 200 MHz rating, CAS latency options, and flexible burst modes make it suitable for systems that demand predictable, high‑bandwidth memory behavior.

Manufactured by ESMT and supplied in a compact 54‑TSOP II surface‑mount package, this device is well matched to compact board designs and mainstream system voltage rails. Its RoHS compliance and JEDEC qualification support production deployment in a range of high‑performance memory applications.

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