M12L16161A-7TG2R

The M12L16161A-7TG2R is a synchronous high-data-rate DRAM organized as 16,777,216 bits (2 × 524,288 words by 16 bits) fabricated with high-performance CMOS technology. It implements synchronous operation with dual banks, supporting precise cycle control via the system clock and programmable operating parameters.

Designed for high-bandwidth, high-performance memory system applications, this JEDEC-standard 3.3 V SDRAM provides flexible burst lengths and CAS latencies to adapt to a variety of system timing and bandwidth requirements while fitting into a compact 50‑lead TSOP II surface-mount package.

Key Features

• Memory Architecture — Organized as 512K × 16 bits with two banks (2 × 524,288 × 16), providing 16,777,216 bits of synchronous DRAM storage.
• Synchronous Operation — All inputs are sampled on the positive-going edge of the system clock for precise timing and predictable throughput.
• Dual-Bank Operation — Two independent banks enable interleaved access patterns to improve effective bandwidth in multi-cycle access scenarios.
• Programmable Burst & Latency — Supports burst lengths of 1, 2, 4, 8 and full page with CAS latency options of 2 and 3 for flexible performance tuning.
• Burst Types & Masking — Sequential and interleave burst types supported; DQM for data masking and burst read single-bit write operation.
• JEDEC 3.3 V Supply — Standard 3.3 V supply operation with allowed supply range 3.0 V to 3.6 V for compatibility with JEDEC power systems.
• Timing & Throughput — Specified maximum frequency 143 MHz with typical access time 6 ns and write cycle time (word/page) 14 ns.
• Refresh & Power Management — Auto and self-refresh supported with a 32 ms refresh period (2K cycle); CKE input for clock enable/power-down control.
• Package & Mounting — Surface-mount 50‑TSOP II package (400 mil × 825 mil body, 0.8 mm pin pitch) for compact board-level integration.
• Commercial Grade & Compliance — Commercial operating temperature 0 °C to 70 °C and RoHS compliant; device qualification per JEDEC.

Typical Applications

• High-bandwidth memory subsystems — Suited for systems that require synchronous DRAM with programmable burst lengths and CAS latencies to match system timing.
• Embedded memory modules — Compact 50‑TSOP II package enables board-level integration where surface-mount DRAM is required.
• Performance-tuned designs — Dual‑bank operation and selectable burst modes help optimize throughput in designs with interleaved access patterns.

Unique Advantages

• Flexible performance tuning: Programmable burst lengths and CAS latency options let designers balance latency and throughput for target workloads.
• Predictable synchronous timing: Positive-edge clock sampling and synchronous architecture enable consistent cycle control for system-level timing.
• Dual-bank concurrency: Two independent banks support interleaved accesses to improve effective memory bandwidth.
• JEDEC 3.3 V compatibility: Standard supply range (3.0 V–3.6 V) simplifies integration with common system power rails.
• Compact surface-mount package: 50‑lead TSOP II provides a small footprint for space-constrained PCB layouts.
• Industry-standard qualification: JEDEC qualification and RoHS compliance align with standard manufacturing and environmental requirements.

Why Choose M12L16161A-7TG2R?

The M12L16161A-7TG2R positions itself as a reliable, synchronous DRAM option for designs requiring a 16 Mbit density in a compact TSOP II package. Its CMOS fabrication, dual-bank architecture and programmable burst/latency features make it suited to high-bandwidth, high-performance memory subsystems where predictable timing and flexible performance tuning are important.

This commercially graded, JEDEC-standard device is appropriate for engineers and procurement teams seeking a RoHS-compliant SDRAM with a 3.0 V–3.6 V supply range, 0 °C to 70 °C operating window, and board-level TSOP II mounting for compact system integration.

Request a quote or submit an RFQ to evaluate the M12L16161A-7TG2R for your next project and confirm availability and pricing for your production requirements.