M12L128324A-7BG2C

The M12L128324A-7BG2C is a synchronous DRAM device organized as 4 × 1,048,576 words by 32 bits for a total of 134,217,728 bits (134.2 Mbit). It implements a four‑bank architecture with JEDEC‑standard 3.3V operation and is designed for high‑data‑rate, clocked memory systems.

This device targets high‑bandwidth, high‑performance memory system applications that require programmable latencies, burst operation and compact surface‑mount packaging. It supports a 3.0–3.6V supply range and operates at up to 143 MHz for the -7BG2C speed grade.

Key Features

• Memory Core and Organization 4 × 1,048,576 words by 32 bits (134,217,728 bits / 134.2 Mbit) with four selectable banks for improved command concurrency.
• Synchronous DRAM Architecture All inputs are sampled on the positive edge of the system clock; supports MRS cycle programming for configuration.
• Programmable Latency & Burst CAS Latency options of 2 and 3; programmable burst lengths (1, 2, 4, 8 and full page) and burst types (sequential & interleave).
• Data Masking and Refresh DQM pins for byte masking; supports auto and self‑refresh with a 64 ms refresh period (4K cycle).
• Performance Timings Access time: 6 ns; write cycle time (word/page): 14 ns; operational frequency for this grade: 143 MHz.
• Voltage and Logic Levels JEDEC standard 3.3V power supply; specified supply range 3.0 V to 3.6 V and LVTTL compatible inputs for multiplexed address operation.
• Package & Mounting Surface‑mount 90‑FBGA (8 mm × 13 mm × 1 mm body, 0.8 mm ball pitch) package suitable for compact board designs.
• Qualification & Environmental JEDEC qualification and RoHS compliant; commercial grade operating range 0 °C to 70 °C.

Typical Applications

• High‑bandwidth memory systems — Provides synchronous, banked DRAM with programmable burst and latency options for systems requiring frequent, high‑speed transfers.
• Embedded platforms and modules — Compact 90‑FBGA package and surface‑mount mounting make it suitable for space‑constrained embedded designs that use parallel SDRAM.
• System memory expansion — Acts as a parallel SDRAM memory resource where JEDEC‑standard 3.3V SDRAM is required for buffering and temporary storage.

Unique Advantages

• Flexible latency and burst control: CAS latency options and multiple burst lengths/types let designers tune throughput and access behavior to system needs.
• Four‑bank architecture: Enables improved internal parallelism and command pipelining for higher effective bandwidth in bursty workloads.
• JEDEC standard supply and interface: 3.3V operation and LVTTL‑compatible addressing simplify integration with standard SDRAM controllers.
• Compact FBGA package: 90‑ball FBGA (8×13×1 mm, 0.8 mm pitch) supports dense board layouts without sacrificing pinout required for a 32‑bit parallel interface.
• Refresh and data integrity features: Auto/self‑refresh support and DQM masking provide controlled refresh cycles and selective data writes.
• Regulated quality and compliance: JEDEC qualification and RoHS compliance align the device with common manufacturing and environmental requirements.

Why Choose M12L128324A-7BG2C?

The M12L128324A-7BG2C positions itself as a straightforward, JEDEC‑compliant SDRAM option for designers who need a 134.2 Mbit synchronous memory with flexible burst/latency programming and a four‑bank architecture. Its 3.0–3.6 V supply range, LVTTL‑compatible inputs, and documented timing (6 ns access, 14 ns write cycle) make it appropriate for systems that require predictable synchronous behavior at up to 143 MHz.

Commercial‑grade operating range, compact 90‑FBGA packaging and RoHS compliance make the device suitable for a variety of board‑level designs where space, regulated supply and standard SDRAM functionality are priorities. Manufacturer datasheet and JEDEC qualification support system integration and design verification.

If you need pricing, availability or technical support for the M12L128324A-7BG2C, request a quote or submit an inquiry to receive lead‑time and order details.