M12L16161A-5T(2R)

The M12L16161A-5T(2R) is a synchronous DRAM device delivering 16,777,216 bits of volatile memory organized as 2 × 524,288 words by 16 bits. Designed for industrial-grade operation, the device supports synchronous clocked operation with precise cycle control and is qualified to JEDEC standards.

Its architecture and supported modes make it suitable for high-bandwidth, high-performance memory system applications that require programmable latencies, burst operation and reliable operation across a wide temperature range.

Key Features

• Density & Organization  16,777,216-bit SDRAM organized as 2 × 524,288 words by 16 bits (512K × 16 × 2 banks).
• Synchronous Architecture  All inputs sampled on the positive edge of the system clock for precise timing and predictable cycle control.
• Performance  200 MHz maximum clock frequency with 5 ns access time and 10 ns write cycle time (word/page).
• Flexible Timing & Burst Modes  Supports CAS latency 2 and 3, programmable burst lengths (1, 2, 4, 8 and full page) and sequential/interleave burst types.
• Dual Bank Operation & Refresh  Dual-bank architecture with auto and self-refresh support and a 32 ms refresh period (2K cycle).
• Interface & Control  LVTTL-compatible multiplexed address pins, parallel data interface, DQM masking, and standard SDRAM control signals (CLK, CS, CKE, RAS, CAS, WE).
• Industrial Grade & Package  Industrial operating temperature −40 °C to 85 °C; surface-mount 50‑pin TSOP package; JEDEC-qualified.
• Compliance  RoHS compliant.

Typical Applications

• High-performance memory subsystems  Suitable where synchronous, high-bandwidth DRAM with programmable burst and latency is required.
• Industrial embedded systems  Industrial-grade temperature range (−40 °C to 85 °C) addresses demanding environmental requirements.
• Board-level SDRAM for surface-mount designs  50‑pin TSOP surface-mount package supports compact, high-density board layouts.

Unique Advantages

• Industrial temperature operation  Guaranteed operation from −40 °C to 85 °C for reliable performance in harsh environments.
• JEDEC-standard power and qualification  JEDEC standard 3.3 V supply and JEDEC qualification streamline integration into standard memory architectures.
• Configurable performance  CAS latency options and multiple burst lengths enable designers to tune throughput versus latency for targeted workloads.
• Dual-bank architecture  Two independent banks allow overlapping operations to improve effective memory throughput in bursty access patterns.
• Compact surface-mount footprint  50‑pin TSOP package provides a space-efficient solution for board-level memory integration.
• Standby and refresh features  Auto and self-refresh modes plus clock enable allow controlled power and refresh management.

Why Choose M12L16161A-5T(2R)?

The M12L16161A-5T(2R) positions itself as a robust, JEDEC-qualified synchronous DRAM option for designs that require predictable cycle-timed memory, flexible burst and latency configuration, and industrial temperature operation. With 16,777,216 bits organized across dual banks, 200 MHz clock capability and support for CAS latency 2 and 3, it targets high-bandwidth embedded and system-level memory applications.

Choose this device when you need a surface-mount, JEDEC-standard SDRAM that balances configurability, compact packaging and industrial robustness for long-term deployments and board-level integration.

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