M12L16161A-5TG2R

The M12L16161A-5TG2R is a 16,777,216‑bit synchronous high‑data‑rate DRAM organized as 2 × 524,288 words by 16 bits. It implements a dual‑bank synchronous architecture with JEDEC‑standard 3.3V supply and LVTTL‑compatible inputs for multiplexed address systems.

Designed for high‑bandwidth, high‑performance memory system applications, the device offers programmable burst length and CAS latency options, making it suitable for designs that require precise cycle control and flexible timing behavior.

Key Features

• Memory Organization – 16,777,216 bits arranged as 512K × 16 with 2 banks to support concurrent bank operations and efficient memory access patterns.
• High‑Rate Synchronous DRAM – Rated for up to 200 MHz operation with an access time of 4.5 ns and a write cycle time (word/page) of 10 ns for fast, deterministic data transfers.
• Programmable Burst and Latency – Supports burst length options (1, 2, 4, 8 & full page) and CAS latency settings of 2 and 3 to match system bandwidth and latency requirements.
• Burst Modes and Data Masking – Sequential and interleave burst types are supported; DQM/LDQM/UDQM provides data input/output masking and hi‑Z output control.
• Synchronous Interface and Controls – All inputs are sampled on the positive edge of CLK; includes standard control pins (CLK, CS, CKE, RAS, CAS, WE, BA, A0–A10/AP) consistent with JEDEC SDRAM conventions.
• Refresh and Power – Auto and self‑refresh supported with a 32 ms refresh period (2K cycle); JEDEC standard 3.3V supply range specified at 3.0V–3.6V.
• Package and Mounting – Surface‑mount 50‑lead TSOP II package (400 mil × 825 mil body, 0.8 mm pin pitch) for compact board-level implementation.
• Operating Range and Compliance – Commercial grade operation from 0°C to 70°C; JEDEC qualified and RoHS compliant.

Typical Applications

• High‑performance memory subsystems – Use in systems that require synchronous DRAM with programmable burst and latency to tune memory throughput and timing.
• Embedded systems with demanding bandwidth – Deploy where deterministic synchronous access and dual‑bank operation help maintain steady data flow.
• Timing‑sensitive designs – Apply in designs that leverage CAS latency settings and burst modes to match system timing and transfer patterns.

Unique Advantages

• Flexible timing control – Programmable burst lengths and CAS latency options let designers optimize for throughput or latency as required.
• Deterministic synchronous operation – Inputs sampled on the positive edge of CLK provide tight timing control for cycle‑accurate memory transactions.
• Dual‑bank architecture – Two banks of 512K × 16 organization support interleaved operations to improve effective access concurrency.
• Compact surface‑mount package – 50‑lead TSOP II minimizes board footprint while delivering a full SDRAM feature set for system integration.
• Standards‑based compatibility – JEDEC 3.3V supply and JEDEC qualification simplify integration into standard SDRAM memory architectures.

Why Choose M12L16161A-5TG2R?

The M12L16161A-5TG2R provides a balanced combination of high‑rate synchronous performance, flexible burst and latency programming, and a compact 50‑TSOP II package. Its JEDEC compliance and 3.0V–3.6V supply range make it a pragmatic choice for commercial‑grade designs that require predictable, high‑bandwidth memory behavior.

This device is well suited for designers and procurement teams building memory subsystems or embedded platforms that need synchronous DRAM with programmable timing, dual‑bank operation, and standard SDRAM control signals for straightforward integration and scalability.

Request a quote or submit a procurement inquiry to receive pricing and availability for the M12L16161A-5TG2R.