M12L2561616A-5T(2T)

The M12L2561616A-5T(2T) is a synchronous DRAM device from ESMT organized as 4 × 4,194,304 words by 16 bits for a total of 268,435,456 bits. It is designed for high-bandwidth, high-performance memory system applications requiring synchronous, clocked operation and precise cycle control.

Key architectural elements include four internal banks, programmable burst lengths and latencies, and inputs sampled on the positive-going edge of the system clock—features that support deterministic timing and flexible performance tuning for commercial embedded and consumer designs.

Key Features

• Memory Organization  268,435,456 bits organized as 4 × 4,194,304 words × 16 bits; parallel SDRAM format for straightforward memory-channel integration.
• Synchronous Operation & Clocking  All inputs are sampled on the positive-going edge of the system clock; supports operation up to 200 MHz for deterministic timing.
• Programmable Performance  CAS latency options of 2 and 3 and programmable burst lengths (1, 2, 4, 8 & full page) with sequential and interleave burst types enable performance tuning to match system requirements.
• Banking & Data Mask  Four-bank operation and DQM data-mask support for masked writes and byte/word-level control.
• Refresh & Power Management  Auto and self-refresh capability with a 64 ms refresh period (8K cycles) to maintain data integrity during idle periods.
• Interface & Compatibility  LVTTL compatible with multiplexed address; parallel memory interface suitable for legacy and contemporary memory controllers.
• Packaging & Mounting  Available in 54‑pin TSOP II and 54‑ball FBGA packages; surface-mount mounting type for PCB assembly.
• Commercial Grade & Compliance  Commercial temperature range 0 °C to 70 °C, JEDEC qualification, and RoHS-compliant (Pb-free) construction.

Typical Applications

• High‑Performance Memory Subsystems  Used where deterministic synchronous access and programmable latencies are required for bandwidth-critical memory paths.
• Commercial Embedded Systems  Suited for commercial-grade embedded applications operating within 0 °C to 70 °C that require a compact, surface-mount SDRAM solution.
• Consumer Electronics  Applicable to consumer devices needing a JEDEC-standard 3.3V SDRAM with flexible burst and latency settings for varied workload profiles.

Unique Advantages

• Flexible Performance Tuning:  CAS latency options and programmable burst lengths let designers balance latency and throughput for target workloads.
• High Density in Compact Packages:  268,435,456‑bit capacity available in 54‑pin TSOP II or 54‑ball BGA formats to save board space while maintaining capacity.
• Deterministic Synchronous Interface:  Positive-edge clock sampling and support for up to 200 MHz operation simplify timing closure in synchronous systems.
• Power and Data Integrity Features:  Auto/self-refresh and DQM masking provide robust data retention and controlled write operations during normal and idle conditions.
• Standards-Based Compliance:  JEDEC qualification and RoHS-compliant, Pb-free offerings support standardized integration and regulatory needs for commercial products.

Why Choose M12L2561616A-5T(2T)?

The M12L2561616A-5T(2T) combines a high-density, four-bank SDRAM architecture with synchronous, programmable performance features that fit a range of high-bandwidth commercial applications. With JEDEC-standard 3.3V operation, selectable CAS latencies, and flexible burst modes, it enables designers to optimize memory behavior for throughput or latency based on system needs.

Packaged in compact TSOP II or BGA formats and specified for commercial operation (0 °C to 70 °C) with RoHS compliance, this device is targeted at designers seeking a standards-based SDRAM component for reliable, space-efficient memory subsystems.

Request a quote or submit an inquiry to learn more about pricing, lead times, and packaging options for the M12L2561616A-5T(2T).