M12L128168A-6BG2S

The M12L128168A-6BG2S from ESMT is a synchronous DRAM device organized as 4 × 2,097,152 words by 16 bits, delivering 134,217,728 bits (134.2 Mbit) of volatile memory. It implements a high-data-rate SDRAM architecture with four-bank operation, programmable burst lengths and latencies, and synchronous clocked I/O for predictable cycle control.

Designed for high-bandwidth, high-performance memory system applications, this JEDEC-qualified, commercial-grade device operates at up to 166 MHz with a 3.0 V–3.6 V supply and comes in a compact 54-ball FBGA surface-mount package suitable for dense board-level integration.

Key Features

• Memory Organization & Capacity  The device is organized as 2M × 16 with a total of 134,217,728 bits (134.2 Mbit), implemented as 4 banks of 2,097,152 × 16 bits.
• Synchronous DRAM Architecture  Synchronous design with all inputs sampled on the positive edge of the system clock enables precise cycle control and I/O transactions on every clock cycle.
• Performance & Timing  Supports a maximum frequency of 166 MHz for this part number, with an access time of 5.4 ns and a write cycle word/page time of 12 ns. CAS latency options include 2 and 3.
• Burst and Addressing Flexibility  Programmable burst lengths (1, 2, 4, 8 and full page) and burst types (sequential and interleave) with multiplexed row/column addressing support.
• Bank & Command Features  Four-bank operation with bank select (BA0, BA1) and MRS cycle support for programmable operation modes.
• Power & Interface  JEDEC-standard 3.3 V supply with VDDQ/VSSQ isolated data output power/ground for improved output noise immunity; LVTTL compatible inputs.
• Refresh & Reliability  Auto and self-refresh supported with a 64 ms refresh period (4K cycle) to maintain data integrity.
• Package & Temperature  Surface-mount 54-ball FBGA package; commercial operating temperature range 0 °C to 70 °C. RoHS compliant.

Typical Applications

• High-bandwidth memory subsystems  Use where synchronous, multi-bank DRAM is required for predictable, clocked data transfers in high-throughput designs.
• Board-level memory expansion  Compact 54-ball FBGA package enables dense surface-mount integration for system boards requiring additional SDRAM capacity.
• Deterministic timing designs  Programmable CAS latency and burst modes support applications that require precise cycle control and configurable memory timing.

Unique Advantages

• Programmable latency and burst control  CAS latency options and multiple burst lengths allow designers to tune performance for specific system timing and throughput requirements.
• Four-bank operation  Multiple banks increase effective concurrency for read/write sequences, improving sustained data throughput in multi-access scenarios.
• Isolated output power  Separate VDDQ/VSSQ for data outputs enhances noise immunity for the output buffers on high-speed interfaces.
• JEDEC-standard power and compliance  Standard 3.3 V operation and JEDEC qualification facilitate integration into established memory subsystems.
• Compact surface-mount package  54-FBGA footprint supports space-constrained board layouts while maintaining required signal and power connections.
• Refresh and power management  Auto/self-refresh and clock-enable (CKE) support help manage power and data retention in diverse operating modes.

Why Choose M12L128168A-6BG2S?

The M12L128168A-6BG2S is positioned for designs that require a synchronous, JEDEC-qualified SDRAM offering predictable timing, configurable latency and burst behavior, and four-bank architecture for improved throughput. Its 166 MHz operating point, 3.0 V–3.6 V supply range, and isolated VDDQ outputs make it suitable for system designs targeting reliable high-speed memory interfaces in a compact 54-ball FBGA package.

Engineers specifying this part benefit from programmable timing options, standard refresh mechanisms, and a commercial temperature grade, making it a practical choice for high-performance memory system applications where board-level density and JEDEC compatibility are important.

Request a quote or submit a purchasing inquiry to evaluate the M12L128168A-6BG2S for your next memory subsystem design.