M12L128168A-5BG2S

128Mb SDRAM
Part Description

SDRAM 128Mbit 2M×16×4Banks 3.3V 200MHz 54-FBGA

Quantity 799 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-FBGAMemory FormatDRAMTechnologyDRAM
Memory Size128 MbitAccess Time4.5 nsGradeCommercial
Clock Frequency200 MHzVoltage3.0V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C – 70°CWrite Cycle Time Word Page10 nsPackaging54-FBGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization2M x 16
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.02

Overview of M12L128168A-5BG2S – SDRAM 128Mbit 2M×16×4Banks 3.3V 200MHz 54-FBGA

The M12L128168A-5BG2S is a synchronous DRAM device organized as 4 × 2,097,152 words by 16 bits (134,217,728 bits). It implements a parallel SDRAM architecture with four internal banks and supports JEDEC-standard 3.3 V operation for use in synchronous, clocked memory subsystems.

Designed for high-data-rate memory system applications, this device offers programmable burst lengths and latencies and supports common SDRAM features such as auto/self refresh and data masking, enabling integration into a range of commercial designs that require predictable, clocked memory behavior.

Key Features

  • Memory Organization  134,217,728-bit SDRAM organized as 2M × 16 with four banks to support bank-interleaving and efficient memory access.
  • Clock and Timing  Specified for 200 MHz operation with an access time of 4.5 ns and a write cycle time (word/page) of 10 ns, providing defined timing for synchronous systems.
  • JEDEC Standard 3.3 V Supply  Operates from 3.0 V to 3.6 V in accordance with JEDEC power requirements for SDRAM devices.
  • Burst and Latency Options  Programmable burst lengths (1, 2, 4, 8, full page) and CAS latencies of 2 and 3 to match system throughput and access patterns.
  • Synchronous Interface  All inputs are sampled on the positive edge of the system clock; supports LVTTL-compatible multiplexed addresses and parallel DQ[0:15] data lines.
  • Bank and Addressing Controls  Bank address pins (BA0, BA1), multiplexed row/column addressing (A0–A11), and standard control signals (RAS, CAS, WE, CS, CKE) for typical SDRAM command sequences.
  • Data Integrity and Refresh  DQM data masking, auto and self-refresh capability, and a 64 ms refresh period (4K cycle) to maintain stored data.
  • Separate Output Power  VDDQ/VSSQ pins isolate data output power and ground for improved noise immunity on the output buffers.
  • Commercial Grade and Packaging  Commercial operating temperature 0 °C to 70 °C and supplied in a 54-ball FBGA package (54-FBGA) with surface-mount mounting.
  • RoHS Compliant  Device is RoHS compliant and supplied Pb-free as part of the M12L128168A series offerings.

Typical Applications

  • High-bandwidth memory subsystems  Integration into systems that require synchronous, clocked DRAM for predictable high-rate data access patterns.
  • Board-level memory expansion  Use as a parallel SDRAM component for designs needing 2M × 16 organization and standard SDRAM control signals.
  • Embedded systems with parallel SDRAM interfaces  Suited for commercial embedded designs operating within 0 °C to 70 °C that require JEDEC-compatible SDRAM behavior.

Unique Advantages

  • Standard JEDEC 3.3 V interface: Simplifies integration with existing 3.3 V SDRAM controllers and system designs.
  • Flexible burst and latency settings: Programmable burst lengths and CAS latencies allow tuning for different access patterns and system throughput requirements.
  • Four-bank architecture: Enables bank interleaving and improved utilization of internal memory resources for sustained data transfers.
  • Isolated output power (VDDQ): Improves noise immunity on data outputs, aiding signal integrity in board-level designs.
  • Auto and self-refresh support: Simplifies refresh management in systems that require low-power standby or predictable refresh behavior.
  • Compact FBGA packaging: 54-ball FBGA provides a small, surface-mount footprint suitable for compact commercial designs.

Why Choose M12L128168A-5BG2S?

The M12L128168A-5BG2S offers a JEDEC-standard synchronous DRAM solution in a 2M × 16, four-bank architecture designed for 200 MHz operation and commercial-temperature applications. Its programmable burst lengths, CAS latency options, and standard control interface make it well suited for designers targeting predictable, clocked memory behavior in high-data-rate modules and board-level memory expansions.

As part of the ESMT M12L128168A series, this device provides a standards-based memory option with defined timing, refresh, and power characteristics (3.0 V–3.6 V). Its FBGA package and RoHS-compliant construction support compact, manufacturable designs for commercial product lines.

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