M12L128168A-5BG2S
| Part Description |
SDRAM 128Mbit 2M×16×4Banks 3.3V 200MHz 54-FBGA |
|---|---|
| Quantity | 799 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 54-FBGA | Memory Format | DRAM | Technology | DRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 4.5 ns | Grade | Commercial | ||
| Clock Frequency | 200 MHz | Voltage | 3.0V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C – 70°C | Write Cycle Time Word Page | 10 ns | Packaging | 54-FBGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 2M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.02 |
Overview of M12L128168A-5BG2S – SDRAM 128Mbit 2M×16×4Banks 3.3V 200MHz 54-FBGA
The M12L128168A-5BG2S is a synchronous DRAM device organized as 4 × 2,097,152 words by 16 bits (134,217,728 bits). It implements a parallel SDRAM architecture with four internal banks and supports JEDEC-standard 3.3 V operation for use in synchronous, clocked memory subsystems.
Designed for high-data-rate memory system applications, this device offers programmable burst lengths and latencies and supports common SDRAM features such as auto/self refresh and data masking, enabling integration into a range of commercial designs that require predictable, clocked memory behavior.
Key Features
- Memory Organization 134,217,728-bit SDRAM organized as 2M × 16 with four banks to support bank-interleaving and efficient memory access.
- Clock and Timing Specified for 200 MHz operation with an access time of 4.5 ns and a write cycle time (word/page) of 10 ns, providing defined timing for synchronous systems.
- JEDEC Standard 3.3 V Supply Operates from 3.0 V to 3.6 V in accordance with JEDEC power requirements for SDRAM devices.
- Burst and Latency Options Programmable burst lengths (1, 2, 4, 8, full page) and CAS latencies of 2 and 3 to match system throughput and access patterns.
- Synchronous Interface All inputs are sampled on the positive edge of the system clock; supports LVTTL-compatible multiplexed addresses and parallel DQ[0:15] data lines.
- Bank and Addressing Controls Bank address pins (BA0, BA1), multiplexed row/column addressing (A0–A11), and standard control signals (RAS, CAS, WE, CS, CKE) for typical SDRAM command sequences.
- Data Integrity and Refresh DQM data masking, auto and self-refresh capability, and a 64 ms refresh period (4K cycle) to maintain stored data.
- Separate Output Power VDDQ/VSSQ pins isolate data output power and ground for improved noise immunity on the output buffers.
- Commercial Grade and Packaging Commercial operating temperature 0 °C to 70 °C and supplied in a 54-ball FBGA package (54-FBGA) with surface-mount mounting.
- RoHS Compliant Device is RoHS compliant and supplied Pb-free as part of the M12L128168A series offerings.
Typical Applications
- High-bandwidth memory subsystems Integration into systems that require synchronous, clocked DRAM for predictable high-rate data access patterns.
- Board-level memory expansion Use as a parallel SDRAM component for designs needing 2M × 16 organization and standard SDRAM control signals.
- Embedded systems with parallel SDRAM interfaces Suited for commercial embedded designs operating within 0 °C to 70 °C that require JEDEC-compatible SDRAM behavior.
Unique Advantages
- Standard JEDEC 3.3 V interface: Simplifies integration with existing 3.3 V SDRAM controllers and system designs.
- Flexible burst and latency settings: Programmable burst lengths and CAS latencies allow tuning for different access patterns and system throughput requirements.
- Four-bank architecture: Enables bank interleaving and improved utilization of internal memory resources for sustained data transfers.
- Isolated output power (VDDQ): Improves noise immunity on data outputs, aiding signal integrity in board-level designs.
- Auto and self-refresh support: Simplifies refresh management in systems that require low-power standby or predictable refresh behavior.
- Compact FBGA packaging: 54-ball FBGA provides a small, surface-mount footprint suitable for compact commercial designs.
Why Choose M12L128168A-5BG2S?
The M12L128168A-5BG2S offers a JEDEC-standard synchronous DRAM solution in a 2M × 16, four-bank architecture designed for 200 MHz operation and commercial-temperature applications. Its programmable burst lengths, CAS latency options, and standard control interface make it well suited for designers targeting predictable, clocked memory behavior in high-data-rate modules and board-level memory expansions.
As part of the ESMT M12L128168A series, this device provides a standards-based memory option with defined timing, refresh, and power characteristics (3.0 V–3.6 V). Its FBGA package and RoHS-compliant construction support compact, manufacturable designs for commercial product lines.
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Date Founded: 1998
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