M12L128168A (2S)

The M12L128168A (2S) is a synchronous DRAM (SDRAM) device organized as 8M × 16 (4 banks of 2,097,152 words × 16 bits) delivering 134,217,728 bits (134.2 Mbit) of volatile memory. It implements a synchronous architecture with multiplexed address lines and clocked I/O to support predictable, high-bandwidth memory operations.

Designed for industrial operating conditions (−40 °C to 85 °C) and JEDEC-compliant operation, the device supports programmable burst lengths and CAS latencies to adapt to a range of high-performance memory system designs.

Key Features

• Memory Capacity & Organization — 134.2 Mbit organized as 8M × 16 with four internal banks (4 × 2,097,152 × 16) to support parallel, high-throughput access patterns.
• Synchronous DRAM Architecture — All inputs sampled on the positive edge of system clock; supports burst read and single write operations for predictable timing.
• Performance — Maximum listed clock frequency up to 200 MHz with a 5 ns access time and 15 ns write cycle time (word/page), enabling fast memory transactions.
• JEDEC Power and Signaling — JEDEC standard 3.3V power supply and LVTTL-compatible signaling with multiplexed address support.
• Flexible Timing & Burst Control — CAS latency options of 2 and 3; programmable burst lengths (1, 2, 4, 8, full page) and burst types (sequential and interleave) to tune throughput and latency.
• Refresh and Power Management — Auto and self-refresh support with a 64 ms refresh period (4K cycle); CKE pin for clock enable/power-down control.
• Data Masking and I/O — DQM for data masking; L(U)DQM to block or mask data input/output as needed.
• Industrial Temperature Range — Rated for −40 °C to 85 °C operation for rugged environments.
• Package Options & Mounting — Available in 54-pin TSOPII and 54-ball FBGA packages; surface-mount compatible.
• Compliance — JEDEC qualification and RoHS compliant.

Typical Applications

• High‑bandwidth memory systems — Used where synchronous, burst-capable DRAM is required to sustain continuous data throughput with programmable latencies.
• Industrial embedded systems — Suitable for designs that require JEDEC SDRAM performance across a −40 °C to 85 °C operating range.
• Networking and communications equipment — Supports burst operations and banked architecture for packet buffering and temporary data storage in high-performance modules.

Unique Advantages

• Industrial temperature rating: −40 °C to 85 °C supports deployment in harsh and temperature-variable environments.
• Programmable performance: CAS latency and burst-length options let designers balance latency and throughput to match system requirements.
• JEDEC-compliant signaling: 3.3V JEDEC power supply and LVTTL compatibility simplify integration with standard SDRAM controllers.
• Flexible packaging: Choice of 54-pin TSOPII or 54-ball FBGA provides layout options for differing board and thermal constraints.
• Built-in refresh and power control: Auto/self-refresh and CKE-based clock enable help manage power and data integrity during low-power modes.
• RoHS compliant: Meets environmental requirements for lead-free manufacturing and assembly.

Why Choose M12L128168A (2S)?

The M12L128168A (2S) positions itself as a JEDEC‑compliant, industrial-grade SDRAM option for designers needing a synchronous, banked memory device with flexible timing and burst capabilities. With up to 200 MHz operation, programmable CAS latencies, and robust refresh and masking features, it fits a range of high-bandwidth memory architectures.

This device is appropriate for engineering teams building systems that demand dependable SDRAM performance across extended temperature ranges and in compact surface-mount packages. Its JEDEC compliance, packaging options, and RoHS status support long-term manufacturability and system integration.

Request a quote or submit an inquiry to obtain pricing, availability, and packaging options for the M12L128168A (2S).