MT48LC16M4A2P-7E:G

IC DRAM 64MBIT PAR 54TSOP II
Part Description

IC DRAM 64MBIT PAR 54TSOP II

Quantity 637 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page14 nsPackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 4
Moisture Sensitivity Level2 (1 Year)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC16M4A2P-7E:G – IC DRAM 64 Mbit, Parallel, 54‑pin TSOP II

The MT48LC16M4A2P-7E:G from Micron Technology Inc. is a 64 Mbit volatile SDRAM device organized as 16M × 4 with internal bank architecture. It provides a parallel SDRAM interface compliant with PC66/PC100/PC133 timing and operates from a single 3.0 V to 3.6 V supply.

Designed for systems that require synchronous DRAM with programmable burst lengths, internal pipelined operation and refresh management, the device targets designs where compact TSOP II packaging and standard SDRAM timing are required.

Key Features

  • Core / Memory Architecture Organized as 16M × 4 with internal banks for hiding row access and precharge; supports programmable burst lengths (1, 2, 4, 8 or full page).
  • Performance PC66-, PC100- and PC133-compliant synchronous operation with a specified clock frequency of 133 MHz and access time of 5.4 ns; column address can be changed every clock cycle for pipelined operation.
  • Refresh and Self-Refresh Auto Refresh, Concurrent Auto Precharge and both standard and low-power self-refresh modes are supported with a 64 ms, 4,096-cycle refresh requirement.
  • Interface and I/O Parallel SDRAM interface with LVTTL-compatible inputs and outputs; programmable features include Auto Precharge and Auto Refresh modes.
  • Power Single supply operation from 3.0 V to 3.6 V (nominal +3.3 V ±0.3 V) simplifies power rail design.
  • Timing / Cycle Write cycle time (word/page) of 14 ns and timing options aligned with PC133-class operation (-7E timing option).
  • Package and Temperature 54-pin TSOP II (0.400", 10.16 mm width) surface-mount package; commercial operating temperature range 0 °C to +70 °C (TA).

Typical Applications

  • PC‑class memory subsystems — Use in systems requiring PC66/PC100/PC133-compliant SDRAM timing and synchronous operation.
  • Embedded designs with parallel SDRAM interface — Parallel SDRAM connectivity for designs that use LVTTL-compatible I/O and programmable burst access.
  • Space‑constrained modules — Compact 54-pin TSOP II package for applications needing a small surface-mount memory footprint.

Unique Advantages

  • PC133 timing compatibility: Supports PC66/PC100/PC133-compliant operation enabling integration into existing PC-class memory timing domains.
  • Flexible burst and pipelined operation: Programmable burst lengths and internal pipelined operation allow column address changes every clock cycle for efficient sequential access.
  • Integrated refresh management: Auto Refresh, Concurrent Auto Precharge and self-refresh modes reduce external refresh handling and support low-power retention modes.
  • Single 3.3 V supply: Operation from 3.0 V to 3.6 V aligns with common system power rails and simplifies power supply design.
  • Compact TSOP II package: 54-pin 0.400" TSOP II footprint minimizes board area while providing standard pinout and connectivity.

Why Choose MT48LC16M4A2P-7E:G?

The MT48LC16M4A2P-7E:G combines synchronous SDRAM architecture with PC-class timing compliance, internal bank management and programmable burst modes to deliver predictable, pipelined memory behavior. Its 3.0 V–3.6 V supply range, LVTTL-compatible I/O and integrated refresh/self-refresh features make it suitable for designs that require standard SDRAM functionality in a compact TSOP II package.

This device is well suited to engineers specifying SDRAM for systems where PC100/PC133 timing, a parallel interface and a small form-factor package are required. The combination of timing options, refresh management and package density supports integration into existing memory subsystems and space-constrained boards.

Request a quote or contact sales to inquire about availability, pricing and lead times for MT48LC16M4A2P-7E:G.

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