MT48LC16M16A2TG-7E:D TR

The MT48LC16M16A2TG-7E:D TR is a 256 Mbit synchronous DRAM organized as 16M × 16 with a parallel memory interface in a 54‑pin TSOP II package. It implements SDR SDRAM architecture with internal banks, pipelined operation and PC100/PC133 compliance for systems targeting synchronous DRAM operation at 133 MHz.

Designed for systems requiring a 3.3 V single-supply parallel SDRAM device with programmable burst modes and standard SDRAM control features, this device delivers predictable timing and a compact package for space-constrained board designs.

Key Features

• SDR SDRAM Core Fully synchronous SDRAM with all signals registered on the positive edge of the system clock and internal pipelined operation allowing column address changes every clock cycle.
• Memory Organization & Capacity 256 Mbit capacity organized as 16M × 16 with 4 internal banks for concurrent row access/precharge management.
• Performance & Timing PC100- and PC133-compliant; specified clock frequency 133 MHz for the -7E speed grade. Datasheet timing for -7E indicates a 2-2-2 RCD-RP-CL target (CL = 15 ns).
• Low-level Access Access time listed at 5.4 ns and write cycle time (word/page) of 14 ns for tight read/write control.
• Burst & Refresh Modes Programmable burst lengths (1, 2, 4, 8, full page), auto precharge, auto refresh and self-refresh support as described in the device specification.
• Electrical & I/O Single-supply operation at 3.0 V to 3.6 V (datasheet references 3.3 V ±0.3 V) with LVTTL-compatible inputs and outputs.
• Package & Temperature Supplied in a 54‑pin TSOP II (0.400", 10.16 mm width) plastic package; commercial operating temperature range 0°C to +70°C.

Typical Applications

• Systems requiring PC100/PC133-compliant SDRAM — Use where synchronous 133 MHz SDRAM timing and compatibility are required.
• Parallel SDRAM memory expansion — 256 Mbit capacity in a 16M × 16 organization for designs needing parallel DRAM resources.
• Compact board designs — 54‑pin TSOP II package supports space-constrained applications that require standard TSOP footprints.

Unique Advantages

• Standards-based performance: PC100/PC133 compliance and a defined -7E speed grade provide predictable timing for system integration.
• Flexible data access: Programmable burst lengths and internal bank architecture improve throughput and simplify burst-oriented transfers.
• Single-supply simplicity: 3.0 V–3.6 V operation (3.3 V nominal) reduces supply rail complexity for systems using legacy 3.3 V designs.
• Compact package: 54‑pin TSOP II (400 mil) package enables higher board density while maintaining a standard footprint.
• Commercial temperature suitability: Rated for 0°C to +70°C operation to match typical commercial electronics environments.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

The MT48LC16M16A2TG-7E:D TR provides a standards-based SDR SDRAM solution in a compact 54‑pin TSOP II package, combining a 256 Mbit capacity with PC100/PC133 timing and internal banked architecture for efficient burst transfers. Its 3.0 V–3.6 V single-supply operation, LVTTL I/O compatibility and commercial temperature rating make it suitable for designs that require predictable SDRAM behavior and a familiar TSOP footprint.

This device is well suited to engineers and procurement teams integrating parallel SDRAM into systems where known timing, burst control and board-space considerations are key factors in memory selection.

Request a quote or submit a pricing and availability inquiry to discuss volume pricing, lead times and ordering options for the MT48LC16M16A2TG-7E:D TR.