MT48LC16M16A2TG-7E L:D
| Part Description |
IC DRAM 256MBIT PAR 54TSOP II |
|---|---|
| Quantity | 1,355 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 14 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 2 (1 Year) | RoHS Compliance | RoHS non-compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT48LC16M16A2TG-7E L:D – IC DRAM 256MBIT PAR 54TSOP II
The MT48LC16M16A2TG-7E L:D is a 256 Mbit synchronous DRAM device organized as 16M × 16 with a parallel memory interface. It implements fully synchronous SDRAM architecture with internal banks and programmable burst operation to support systems requiring standard PC100/PC133-class SDRAM behavior.
Key Features
- Core / Architecture Fully synchronous SDR SDRAM with internal pipelined operation and multiple internal banks to hide row access/precharge.
- Memory Organization 256 Mbit capacity organized as 16M × 16 with 4 internal banks.
- Performance & Timing PC100- and PC133-compliant timing. Speed grade -7E targets 133 MHz with 2-2-2 (RCD–RP–CL) timing; access time specified as 5.4 ns and write cycle time (word page) of 14 ns.
- Burst & Refresh Programmable burst lengths of 1, 2, 4, 8 or full page; supports auto precharge, auto refresh and self-refresh modes (self-refresh noted as not available on AT devices). 8K refresh cycles supported.
- Electrical Single-supply operation at 3.3 V ±0.3 V (specified 3.0 V to 3.6 V). LVTTL-compatible inputs and outputs.
- Package & Temperature 54-pin TSOP II (0.400", 10.16 mm width) package in a commercial operating temperature range of 0 °C to +70 °C.
Unique Advantages
- Standard PC100/PC133 timing compliance: Enables direct use in designs targeting PC100/PC133-class SDRAM timing with the -7E 133 MHz speed grade.
- Flexible burst modes: Programmable burst lengths including full-page operation simplify data transfer sizing and burst-oriented memory access.
- Banked architecture for improved throughput: Four internal banks help hide row access/precharge latency and support pipelined column operations.
- Industry-standard TSOP II package: 54-pin TSOP II footprint facilitates integration into existing board designs requiring this package form factor.
- Single 3.3 V supply: Operates from 3.0 V to 3.6 V, matching common system power rails for ease of integration.
Why Choose MT48LC16M16A2TG-7E L:D?
The MT48LC16M16A2TG-7E L:D delivers a straightforward 256 Mbit SDRAM solution with 16M × 16 organization, PC133-class timing, and a 54-pin TSOP II package. Its fully synchronous, pipelined design with programmable burst lengths and four internal banks provides predictable timing and flexible burst transfer options for systems that require standard SDRAM memory.
This part is positioned for designs that need a commercial-temperature, 3.3 V SDRAM device with standard TSOP II packaging and PC100/PC133 timing characteristics. The device’s refresh, auto precharge and self-refresh capabilities (where available) address typical SDRAM memory-management requirements.
Request a quote or submit a parts inquiry to obtain pricing and availability for the MT48LC16M16A2TG-7E L:D.
