MT48LC16M16A2TG-75 L:D TR

The MT48LC16M16A2TG-75 L:D TR is a 256 Mbit synchronous DRAM (SDRAM) device organized as 16M × 16 with four internal banks. It implements a fully synchronous, parallel memory architecture designed for commercial electronic systems requiring PC100/PC133-class SDRAM.

Key value propositions include a 133 MHz clock rating for PC133 operation, programmable burst lengths and internal bank architecture for pipelined access, and a 54-pin TSOP II package for compact board-level integration.

Key Features

• Core / Architecture  Fully synchronous SDRAM with all signals registered on the positive edge of the system clock and internal pipelined operation for column changes every clock cycle.
• Memory Organization  256 Mbit capacity organized as 16M × 16 with four internal banks to enable row access/precharge hiding.
• Performance & Timing  PC100- and PC133-compliant with a 133 MHz clock frequency (speed grade -75). Access time specified at 5.4 ns and write cycle time (word/page) at 15 ns.
• Programmable Burst & Refresh  Supports programmable burst lengths (1, 2, 4, 8, or full page), auto precharge, auto refresh and self-refresh modes as documented in the device family.
• Power  Single-supply operation at 3.3 V nominal with an allowed supply range of 3.0 V to 3.6 V (3.3 V ±0.3 V per datasheet).
• Interface  Parallel SDRAM interface with LVTTL-compatible inputs and outputs suitable for standard memory controller connections.
• Package  54-pin TSOP II (400 mil, 10.16 mm width) plastic package for surface-mount board designs.
• Operating Range  Commercial temperature rating: 0°C to +70°C (TA).

Typical Applications

• Embedded system memory  Provides parallel SDRAM storage for commercial embedded platforms that require 256 Mbit local or main memory.
• Legacy and PC-class subsystems  Suitable for designs targeting PC100/PC133-class SDRAM interfaces or upgrades using a 54-pin TSOP II footprint.
• Buffered data storage  Used where pipelined, banked SDRAM access patterns and programmable burst lengths improve throughput for burst-oriented workloads.

Unique Advantages

• PC100 / PC133 compatibility: Enables integration into systems designed for PC100 or PC133 SDRAM timing and frequencies, including the -75 speed grade at 133 MHz.
• Flexible burst and bank architecture: Programmable burst lengths and four internal banks allow designers to optimize throughput and latency for pipelined memory access.
• Compact TSOP II package: 54-pin TSOP II (400 mil) package provides a small board footprint for space-constrained assemblies.
• Standard 3.3 V supply range: Operates from 3.0 V to 3.6 V, matching common 3.3 V system rails for straightforward power integration.
• Commercial temperature suitability: Rated for 0°C to +70°C, aligning with typical commercial electronics environmental requirements.

Why Choose MT48LC16M16A2TG-75 L:D TR?

The MT48LC16M16A2TG-75 L:D TR offers a standardized 256 Mbit SDRAM option from Micron with PC100/PC133-class timing, banked memory architecture and programmable burst operation—features that support predictable, pipelined memory performance in commercial embedded and subsystem designs. Its 54-pin TSOP II package and 3.3 V supply range simplify board-level integration for space- and power-constrained applications.

This device is appropriate for engineers and procurement teams specifying parallel SDRAM where proven SDRAM features (auto refresh, auto precharge, self-refresh modes) and PC100/PC133 timing are required. Registered timing, industry-standard packaging, and Micron product lineage support long-term sourcing and design continuity.

If you need pricing, lead time or a formal quote for MT48LC16M16A2TG-75 L:D TR, request a quote or submit an inquiry to receive current availability and purchasing information.