MT48LC16M16A2TG-7E L:D TR
| Part Description |
IC DRAM 256MBIT PAR 54TSOP II |
|---|---|
| Quantity | 604 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 14 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 2 (1 Year) | RoHS Compliance | RoHS non-compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT48LC16M16A2TG-7E L:D TR – IC DRAM 256MBIT PAR 54TSOP II
The MT48LC16M16A2TG-7E L:D TR is a 256 Mbit synchronous DRAM (SDRAM) device organized as 16M x 16 with a parallel memory interface in a 54-pin TSOP II package. It implements fully synchronous, pipelined SDR SDRAM architecture with internal banks and programmable burst operation.
This device is PC100- and PC133-compliant and operates from a single 3.3 V ±0.3 V supply, making it suitable for commercial applications that require a compact 54‑TSOP footprint, 133 MHz clock operation and standard SDRAM control and timing behavior. The specified ambient operating range is 0°C to +70°C.
Key Features
- Core / Architecture Fully synchronous SDR SDRAM with internal pipelined operation and multiple internal banks to hide row access and precharge operations.
- Memory Organization 256 Mbit capacity arranged as 16M × 16 with 4 internal banks, providing parallel data paths for system memory mapping.
- Performance PC100 / PC133-compliant device with a clock frequency of 133 MHz and listed access time of 5.4 ns; typical timing grades include the -7E speed grade.
- Burst and Refresh Programmable burst lengths (1, 2, 4, 8 or full page), auto precharge, auto refresh and self refresh modes supported to simplify memory controller implementation.
- Timing Write cycle time (word/page) of 14 ns and timing options documented for CL and RCD/RP (datasheet timing table for -7E is provided).
- Voltage and I/O Single 3.3 V ±0.3 V supply and LVTTL-compatible inputs/outputs for standard SDRAM signaling.
- Package 54-pin TSOP II (0.400", 10.16 mm width) plastic package suitable for surface-mount module designs where a compact parallel SDRAM footprint is required.
- Operating Temperature Commercial ambient range: 0°C to +70°C (TA).
Typical Applications
- PC100 / PC133 memory subsystems Use as standard SDRAM memory in systems designed around PC100/PC133 timing and signaling.
- Embedded systems with parallel SDRAM Deployment where a 256 Mbit parallel SDRAM in a 54‑pin TSOP II package is required for system memory.
- Compact module designs Integration into small-form-factor boards and modules that require a surface-mount 54‑TSOP II memory footprint.
Unique Advantages
- Standard-compliant timing: PC100 and PC133 compliance and documented speed grade (-7E) provide predictable timing behavior for compatible memory controllers.
- Flexible burst operation: Programmable burst lengths and auto precharge/refresh modes reduce controller complexity for burst and refresh handling.
- Single-supply operation: Single 3.3 V ±0.3 V supply simplifies power rail design and integrates with common digital system voltages.
- Compact package: 54‑TSOP II (0.400", 10.16 mm) package supports higher density PCB layouts while maintaining a parallel SDRAM interface.
- Commercial temperature rating: Specified 0°C to +70°C operating range for applications targeted to commercial environments.
Why Choose MT48LC16M16A2TG-7E L:D TR?
The MT48LC16M16A2TG-7E L:D TR delivers a 256 Mbit, 16M × 16 SDRAM solution built on a fully synchronous, pipelined SDR architecture and offered in a space-efficient 54‑TSOP II package. Its PC100/PC133 timing compliance, programmable burst modes and built-in refresh/autoprecharge features provide deterministic behavior and simplified memory controller design.
This device is appropriate for designers and procurement teams specifying commercial-temperature parallel SDRAM in compact board layouts that require a standard 3.3 V supply and documented timing grades from Micron Technology Inc.
Request a quote or submit an RFQ to receive pricing and availability details for the MT48LC16M16A2TG-7E L:D TR.