MT48LC16M16A2TG-7E L:D TR

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 604 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page14 nsPackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level2 (1 Year)RoHS ComplianceRoHS non-compliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT48LC16M16A2TG-7E L:D TR – IC DRAM 256MBIT PAR 54TSOP II

The MT48LC16M16A2TG-7E L:D TR is a 256 Mbit synchronous DRAM (SDRAM) device organized as 16M x 16 with a parallel memory interface in a 54-pin TSOP II package. It implements fully synchronous, pipelined SDR SDRAM architecture with internal banks and programmable burst operation.

This device is PC100- and PC133-compliant and operates from a single 3.3 V ±0.3 V supply, making it suitable for commercial applications that require a compact 54‑TSOP footprint, 133 MHz clock operation and standard SDRAM control and timing behavior. The specified ambient operating range is 0°C to +70°C.

Key Features

  • Core / Architecture Fully synchronous SDR SDRAM with internal pipelined operation and multiple internal banks to hide row access and precharge operations.
  • Memory Organization 256 Mbit capacity arranged as 16M × 16 with 4 internal banks, providing parallel data paths for system memory mapping.
  • Performance PC100 / PC133-compliant device with a clock frequency of 133 MHz and listed access time of 5.4 ns; typical timing grades include the -7E speed grade.
  • Burst and Refresh Programmable burst lengths (1, 2, 4, 8 or full page), auto precharge, auto refresh and self refresh modes supported to simplify memory controller implementation.
  • Timing Write cycle time (word/page) of 14 ns and timing options documented for CL and RCD/RP (datasheet timing table for -7E is provided).
  • Voltage and I/O Single 3.3 V ±0.3 V supply and LVTTL-compatible inputs/outputs for standard SDRAM signaling.
  • Package 54-pin TSOP II (0.400", 10.16 mm width) plastic package suitable for surface-mount module designs where a compact parallel SDRAM footprint is required.
  • Operating Temperature Commercial ambient range: 0°C to +70°C (TA).

Typical Applications

  • PC100 / PC133 memory subsystems Use as standard SDRAM memory in systems designed around PC100/PC133 timing and signaling.
  • Embedded systems with parallel SDRAM Deployment where a 256 Mbit parallel SDRAM in a 54‑pin TSOP II package is required for system memory.
  • Compact module designs Integration into small-form-factor boards and modules that require a surface-mount 54‑TSOP II memory footprint.

Unique Advantages

  • Standard-compliant timing: PC100 and PC133 compliance and documented speed grade (-7E) provide predictable timing behavior for compatible memory controllers.
  • Flexible burst operation: Programmable burst lengths and auto precharge/refresh modes reduce controller complexity for burst and refresh handling.
  • Single-supply operation: Single 3.3 V ±0.3 V supply simplifies power rail design and integrates with common digital system voltages.
  • Compact package: 54‑TSOP II (0.400", 10.16 mm) package supports higher density PCB layouts while maintaining a parallel SDRAM interface.
  • Commercial temperature rating: Specified 0°C to +70°C operating range for applications targeted to commercial environments.

Why Choose MT48LC16M16A2TG-7E L:D TR?

The MT48LC16M16A2TG-7E L:D TR delivers a 256 Mbit, 16M × 16 SDRAM solution built on a fully synchronous, pipelined SDR architecture and offered in a space-efficient 54‑TSOP II package. Its PC100/PC133 timing compliance, programmable burst modes and built-in refresh/autoprecharge features provide deterministic behavior and simplified memory controller design.

This device is appropriate for designers and procurement teams specifying commercial-temperature parallel SDRAM in compact board layouts that require a standard 3.3 V supply and documented timing grades from Micron Technology Inc.

Request a quote or submit an RFQ to receive pricing and availability details for the MT48LC16M16A2TG-7E L:D TR.

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