MT48LC16M16A2Y66AWC1
| Part Description |
IC DRAM 256MBIT PARALLEL 133MHZ |
|---|---|
| Quantity | 571 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | Die | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 14 ns | Packaging | Die | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT48LC16M16A2Y66AWC1 – IC DRAM 256MBIT PARALLEL 133MHZ
The MT48LC16M16A2Y66AWC1 is a 256 Mbit SDRAM device organized as 16M × 16 with a parallel memory interface and a 133 MHz clock frequency. It is provided as a die and implements volatile DRAM memory.
Key electrical and timing characteristics include an access time of 5.4 ns, a write cycle time (word/page) of 14 ns, and a supply voltage range of 3.0 V to 3.6 V. The device is specified for an ambient operating temperature range of 0°C to 70°C (TA).
Key Features
- Core / Memory Architecture SDRAM technology organized as 16M × 16 delivering 256 Mbit of volatile memory.
- Performance 133 MHz clock frequency with a documented access time of 5.4 ns and a write cycle time (word/page) of 14 ns for predictable timing.
- Interface Parallel memory interface suited to parallel SDRAM topologies and memory controllers.
- Power Operates from a 3.0 V to 3.6 V supply range.
- Package Supplied as a die (SupplierDevicePackage: Die) for direct integration into custom assemblies.
- Temperature Range Rated for ambient operation from 0°C to 70°C (TA).
Typical Applications
- System Memory — Parallel SDRAM capacity for systems requiring 256 Mbit of volatile storage with defined timing characteristics.
- Memory Subsystem Integration — Die-level SDRAM for integration into custom modules or multi-chip memory assemblies.
- Prototype and Evaluation — Use in development or evaluation scenarios that require die-format SDRAM with 133 MHz operation.
Unique Advantages
- Defined timing performance: 5.4 ns access time and 14 ns write cycle time provide clear timing parameters for system design and validation.
- Parallel SDRAM organization: 16M × 16 architecture simplifies address/data mapping for parallel memory controllers.
- Die-level form factor: Direct die supply enables integration into custom hardware and compact assemblies.
- Wide supply range: 3.0 V to 3.6 V support accommodates common power-rail choices in target designs.
- Moderate ambient temperature rating: Specified operation from 0°C to 70°C for typical indoor and controlled-environment applications.
Why Choose IC DRAM 256MBIT PARALLEL 133MHZ?
The MT48LC16M16A2Y66AWC1 is positioned for designs that require a 256 Mbit parallel SDRAM with documented timing and electrical characteristics. Its 16M × 16 organization, 133 MHz clocking, and defined access and write-cycle times make it suitable for developers needing predictable volatile memory behavior.
Offered as a die with a 3.0 V–3.6 V supply range and a 0°C to 70°C operating window, this SDRAM is appropriate for integration into custom memory subsystems and assemblies where die-level components are required and known timing parameters are essential.
To request a quote or obtain pricing and availability for MT48LC16M16A2Y66AWC1, please contact sales or submit a request with the part number and required quantities.
