MT48LC16M4A2P-75:G

The MT48LC16M4A2P-75:G is a 64 Mbit synchronous DRAM (SDRAM) organized as 16M × 4 with four internal banks and a parallel memory interface. It operates at a 133 MHz clock frequency and is supplied from a single +3.3 V rail (3.0 V to 3.6 V).

Designed for systems requiring fully synchronous parallel DRAM, this device provides programmable burst lengths, auto-refresh/self-refresh modes and LVTTL-compatible I/Os to support synchronous memory subsystems compliant with PC66/PC100/PC133 timing.

Key Features

• Core / Memory Architecture 16M × 4 organization with four internal banks (4 Meg × 4 × 4 banks) for banked row access and hidden row precharge.
• Performance / Timing PC66-, PC100-, and PC133-compliant operation with a 133 MHz clock frequency; access time and cycle-time characteristics suitable for CL configurations described in the datasheet.
• Data Transfer Modes Programmable burst lengths of 1, 2, 4, 8 or full-page plus Auto Precharge and Concurrent Auto Precharge to support varied access patterns.
• Refresh and Retention Supports Auto Refresh and Self Refresh modes (standard and low power); 64 ms / 4,096-cycle refresh interval per datasheet.
• Interface Fully synchronous operation with all signals registered on the positive clock edge and LVTTL-compatible inputs/outputs for straightforward parallel interfacing.
• Power Single +3.3 V ±0.3 V supply (listed voltage range 3.0 V to 3.6 V) and self-refresh modes to manage power during idle intervals.
• Package 54-pin TSOP II (0.400", 10.16 mm width) in a compact footprint for surface-mount memory implementations.
• Operating Range Commercial temperature grade with operating temperature 0°C to +70°C (TA) as specified.

Typical Applications

• PC Memory Subsystems — Designed to meet PC66/PC100/PC133 timing classes for use in PC-class synchronous DRAM memory subsystems.
• Synchronous Parallel Memory Designs — For systems that require a parallel SDRAM interface with programmable burst operation and banked internal architecture.
• Compact Surface-Mount Modules — Use in compact board-level memory implementations where a 54-pin TSOP II package is required.

Unique Advantages

• PC133-Class Operation: Provides 133 MHz clock support for systems targeting PC133 timing compliance.
• Flexible Burst Control: Programmable burst lengths (1, 2, 4, 8, full page) enable tuning of data transfer patterns to match system throughput needs.
• Banked Architecture: Four internal banks allow overlapping row access and precharge to improve effective throughput for interleaved accesses.
• Single +3.3 V Supply: Operates from a single 3.0 V–3.6 V supply simplifying power-rail requirements.
• Compact TSOP II Package: 54-pin TSOP II (400 mil, 10.16 mm width) supports surface-mount designs with limited board space.
• Built-in Refresh Management: Auto Refresh and Self Refresh modes reduce external refresh control complexity and support low-power retention intervals.

Why Choose IC DRAM 64MBIT PAR 54TSOP II?

The MT48LC16M4A2P-75:G offers a synchronous, parallel SDRAM solution with PC-class timing, a 16M × 4 organization and four internal banks to support bank-interleaved access patterns. Its single +3.3 V supply, LVTTL-compatible I/Os, and compact 54-pin TSOP II package make it suitable for board-level memory implementations that require standard SDRAM behavior and refresh management built into the device.

This device is appropriate for designs that need a straightforward parallel SDRAM component compliant with PC66/PC100/PC133 timing, and for engineers seeking a compact packaged DRAM with programmable burst lengths and standard refresh capabilities.

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