MT48LC16M16A2TG-6A:D
| Part Description |
IC DRAM 256MBIT PAR 54TSOP II |
|---|---|
| Quantity | 887 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 167 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 12 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 2 (1 Year) | RoHS Compliance | RoHS non-compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT48LC16M16A2TG-6A:D – IC DRAM 256MBIT PAR 54TSOP II
The MT48LC16M16A2TG-6A:D is a 256Mbit synchronous DRAM device organized for parallel system interfaces. It implements SDR SDRAM architecture with internal pipelined operation, programmable burst lengths and internal bank management to support synchronous memory systems.
This device targets designs requiring a 256 Mbit parallel SDRAM delivered in a 54-pin TSOP II (0.400", 10.16 mm width) package, offering 3.3 V-class operation, a 167 MHz clock grade (-6A), and commercial temperature operation.
Key Features
- SDR SDRAM Core Fully synchronous SDR SDRAM with all signals registered on the positive edge of the system clock and internal pipelined operation for column accesses every clock cycle.
- Memory Organization 256 Mbit total capacity; organization listed as 16M × 16 in product specifications and described in the datasheet as 4M × 16 × 4 banks.
- Performance / Timing Clock frequency grade -6A at 167 MHz with target timing RCD-RP-CL = 3-3-3 (CL = 18 ns); access time 5.4 ns and write cycle time (word/page) 12 ns.
- Programmable Burst and Bank Management Programmable burst lengths (1, 2, 4, 8, or full page), internal banks to hide row access/precharge, auto precharge, auto refresh and self-refresh support (self-refresh not available on AT devices as noted).
- Power and I/O Single-supply operation at 3.3 V ±0.3 V (specified 3.0 V to 3.6 V) with LVTTL-compatible inputs and outputs.
- Package and Temperature 54-pin TSOP II (0.400", 10.16 mm width) plastic package; commercial operating temperature range 0° C to +70° C.
- Standards / Options PC100- and PC133-compliant options and multiple package variants listed in the device family (TSOP II, FBGA, VFBGA) and timing grades per datasheet.
Typical Applications
- Parallel memory subsystems Use as a 256 Mbit parallel SDRAM component in systems that require synchronous DRAM with programmable burst lengths and internal bank architecture.
- Embedded systems Provides standard 3.3 V SDRAM memory for embedded platforms needing a 54-pin TSOP II package and commercial temperature operation.
- Legacy bus interfaces Suited for designs using parallel SDRAM interfaces where PC100/PC133-grade timing and a -6A (167 MHz) clock option are applicable.
Unique Advantages
- 167 MHz clock grade (‑6A): Matches systems that require the -6A timing grade with RCD‑RP‑CL = 3‑3‑3 for predictable latency behavior.
- Flexible burst control: Programmable burst lengths (1, 2, 4, 8 or full page) allow designers to optimize sequential and random access patterns.
- Internal bank architecture: Four internal banks help hide row access and precharge cycles, improving effective throughput for banked access patterns.
- Standard 54‑TSOP II package: 0.400" TSOP II footprint (10.16 mm width) for compact surface-mount implementation where this package is required.
- 3.3 V single-supply operation: Operates from 3.0 V to 3.6 V, aligning with common 3.3 V system power rails and LVTTL-compatible signaling.
- Commercial temperature rating: Rated for 0° C to +70° C environments for applications operating in commercial temperature ranges.
Why Choose IC DRAM 256MBIT PAR 54TSOP II?
The MT48LC16M16A2TG-6A:D delivers a 256 Mbit parallel SDRAM option in a compact 54-pin TSOP II package with a 167 MHz timing grade and a full set of SDRAM features such as programmable burst lengths, auto refresh and internal bank management. Its single 3.3 V supply, LVTTL-compatible I/O and commercial temperature rating make it suitable for designs that require standard SDRAM operation and predictable timing.
This device is appropriate for engineers specifying parallel SDRAM memory for embedded and legacy-interface systems where the -6A timing grade, package footprint and commercial temperature operation are required. The datasheet provides detailed timing, refresh and configuration information to support system integration and validation.
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