MT48LC16M16A2P-7E:G
| Part Description |
IC DRAM 256MBIT PAR 54TSOP II |
|---|---|
| Quantity | 241 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 14 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT48LC16M16A2P-7E:G – IC DRAM 256MBIT PAR 54TSOP II
The MT48LC16M16A2P-7E:G is a 256 Mbit SDR SDRAM organized as 16M × 16 with a parallel memory interface in a 54-pin TSOP II package. It implements fully synchronous, pipelined SDRAM architecture with internal banks and programmable burst lengths for use as system memory in designs requiring 256 Mbit of parallel DRAM.
This device targets commercial-temperature applications (0°C to 70°C) and operates from a single 3.0 V to 3.6 V supply, offering PC100/PC133-compliant timing and a 133 MHz clock frequency option for compatible system designs.
Key Features
- Core Architecture Fully synchronous SDR SDRAM with internal pipelined operation and internal banks to optimize row access and precharge management.
- Memory Organization 256 Mbit capacity organized as 16M × 16 with 4 internal banks, providing a parallel DRAM format for standard system memory implementations.
- Performance & Timing PC100- and PC133-compliant timing options with a 133 MHz clock frequency and an access time specified at 5.4 ns; write cycle time (word/page) specified at 14 ns.
- Programmable Modes Programmable burst lengths (1, 2, 4, 8 or full page), auto precharge, auto refresh and self-refresh modes (self-refresh availability noted in family options).
- Power Single 3.3 V nominal supply range (3.0 V to 3.6 V) for easy integration with 3.3 V system power rails.
- Package 54-pin TSOP II (0.400", 10.16 mm width) plastic package suitable for board-level mounting where a compact TSOP footprint is required.
- Operating Range Commercial operating temperature range of 0°C to +70°C as specified for this part.
Typical Applications
- System Memory for Commercial Electronics Use as main or auxiliary parallel SDRAM in commercial devices requiring 256 Mbit of volatile memory at 3.3 V supply and 0°C to 70°C operation.
- Board-Level DRAM Replacement Fits designs that require a 54-pin TSOP II footprint and parallel SDRAM organization (16M × 16) for memory subsystem implementations.
- PC100/PC133-Compatible Designs Suitable for systems designed for PC100 or PC133 timing profiles where a 133 MHz clock option and compliant timing are required.
Unique Advantages
- Standard SDRAM Interface: Parallel SDRAM architecture with programmable burst modes simplifies integration into existing parallel memory controllers.
- PC100/PC133 Timing Compliance: Provides validated timing profiles at 133 MHz to match systems designed for PC100/PC133 operation.
- Compact TSOP II Package: 54-pin TSOP II (400 mil) package delivers a compact board-level footprint for high-density module placements.
- Flexible Refresh and Power Modes: Supports auto refresh and self-refresh modes and a single 3.3 V supply to streamline power sequencing and refresh management.
- Commercial Temperature Rating: Specified for 0°C to +70°C operation, enabling reliable deployment in commercial-temperature system environments.
Why Choose IC DRAM 256MBIT PAR 54TSOP II?
The MT48LC16M16A2P-7E:G delivers a 256 Mbit, 16M × 16 SDRAM solution in a 54-pin TSOP II package, combining PC100/PC133-compliant timing with a 3.3 V single-supply design for straightforward integration into parallel-memory subsystems. Its programmable burst lengths, internal banks and synchronous pipelined operation provide predictable timing and access behavior for system designers targeting commercial-temperature applications.
This device is suited to engineers and procurement teams specifying a compact, parallel SDRAM memory device with defined timing (133 MHz option), a commercial operating range, and a small TSOP II footprint for board-level implementations.
Request a quote or contact sales to discuss availability, pricing, and lead times for the MT48LC16M16A2P-7E:G.