MT48LC16M16A2P-7E:D TR
| Part Description |
IC DRAM 256MBIT PAR 54TSOP II |
|---|---|
| Quantity | 1,651 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 14 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT48LC16M16A2P-7E:D TR – IC DRAM 256MBIT PAR 54TSOP II
The MT48LC16M16A2P-7E:D TR is a 256 Mbit SDRAM organized as 16M × 16 with a parallel memory interface in a 54‑pin TSOP II package. It implements fully synchronous SDR SDRAM architecture with internal pipelining and banked memory to support burst accesses and efficient row/column operation.
This device targets systems requiring PC100/PC133‑compliant SDRAM operation at a 133 MHz clock, a single 3.3 V supply range, and a commercial operating temperature range of 0 °C to 70 °C.
Key Features
- Core / Architecture 256 Mbit SDRAM organized as 16M × 16 with four internal banks and fully synchronous operation; all signals are registered on the positive edge of the system clock.
- Performance / Timing PC100‑ and PC133‑compliant operation with a 133 MHz clock frequency, target timing grade -7E (RCD‑RP‑CL = 2‑2‑2), and an access time of 5.4 ns.
- Burst and Refresh Programmable burst lengths (1, 2, 4, 8, or full page), auto precharge/auto refresh modes and support for standard auto refresh and self refresh functions per the datasheet feature set.
- Power Single 3.3 V power supply (3.0 V to 3.6 V specified) for compatibility with common 3.3 V system rails.
- Interface Parallel memory interface with LVTTL‑compatible inputs and outputs for direct system integration.
- Package 54‑pin TSOP II (0.400", 10.16 mm width) plastic package (54‑TSOP II OCPL option) optimized for standard board mounting.
- Operating Range Commercial temperature grade specified from 0 °C to +70 °C (TA).
Typical Applications
- PC100/PC133 memory systems Use as synchronous DRAM memory compatible with PC100 and PC133 timing targets in systems that require standard SDRAM timing.
- Embedded systems with 3.3 V rails Parallel SDRAM memory for designs that require a single 3.3 V supply and a compact TSOP II footprint.
- Board‑level memory expansion Component for adding 256 Mbit of parallel DRAM in boards where a 54‑pin TSOP II package is required.
Unique Advantages
- PC100/PC133 compliance: Conforms to PC100 and PC133 timing targets, enabling straightforward integration into systems specifying those standards.
- Flexible burst operation: Programmable burst lengths and internal pipelined operation allow column address changes every clock cycle for efficient sequential accesses.
- Compact TSOP II package: 54‑pin TSOP II (0.400") package provides a space‑efficient footprint for board designs requiring SMT mounting.
- Single 3.3 V supply: Operates from 3.0 V to 3.6 V, matching common system power rails to simplify power management.
- Commercial temperature grade: Rated for 0 °C to +70 °C, suitable for standard commercial environments and applications.
Why Choose MT48LC16M16A2P-7E:D TR?
The MT48LC16M16A2P-7E:D TR provides a 256 Mbit, 16M × 16 SDRAM solution in a 54‑pin TSOP II package that meets PC100 and PC133 timing targets. Its fully synchronous, banked architecture with programmable burst lengths and auto refresh features delivers predictable behavior for designs that require parallel SDRAM memory at 3.3 V.
This device is well suited to designers and procurement teams specifying commercial‑grade synchronous DRAM in a compact package for board‑level memory expansion or replacement in systems requiring standard SDRAM timing and 3.3 V operation.
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