MT48LC16M16A2P-7E L:D TR

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 499 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page14 nsPackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level2 (1 Year)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT48LC16M16A2P-7E L:D TR – IC DRAM 256MBIT PAR 54TSOP II

The MT48LC16M16A2P-7E L:D TR is a 256 Mbit SDRAM device organized as 16M × 16 with a parallel memory interface in a 54-pin TSOP II package. It is a fully synchronous DRAM designed for systems requiring PC100/PC133-compliant synchronous memory behavior and supports pipelined, banked internal operation for efficient column and row access.

Key electrical and timing characteristics include a 133 MHz clock frequency, 3.0 V to 3.6 V supply range, an access time of 5.4 ns, and commercial operating temperature range of 0 °C to 70 °C. The device supports programmable burst lengths, auto-refresh and self-refresh modes and is provided in a 54‑TSOP II (0.400", 10.16 mm width) package.

Key Features

  • Core / Architecture 16M × 16 organization with internal bank structure (4 banks), documented as 4 Meg × 16 × 4 banks for the 16M × 16 configuration.
  • SDR SDRAM Operation Fully synchronous operation with all signals registered on the positive edge of the system clock and internal pipelined operation allowing column address changes every clock cycle.
  • PC100 / PC133 Compliance Compliant with PC100 and PC133 timing classes; the -7E speed grade targets a 133 MHz clock frequency.
  • Programmable Burst & Refresh Programmable burst lengths (1, 2, 4, 8 or full page), auto precharge, auto refresh and self-refresh modes along with an 8K refresh count.
  • Timing Performance Clock frequency: 133 MHz; access time listed as 5.4 ns; write cycle time (word/page) 14 ns. Speed-grade timing options are defined in the datasheet.
  • Supply & I/O Single-supply operation specified at 3.0 V to 3.6 V and LVTTL-compatible inputs/outputs as documented in the datasheet.
  • Package 54-pin TSOP II plastic package (0.400" / 10.16 mm width) for standard surface-mount mounting and board-level integration.
  • Operating Range Commercial operating temperature range: 0 °C to +70 °C (TA).

Typical Applications

  • PC memory subsystems — Designed to meet PC100 and PC133 timing requirements for synchronous DRAM memory arrays in personal computer and similar system applications.
  • Embedded systems requiring synchronous DRAM — Used where a parallel SDRAM interface with programmable burst lengths and banked internal memory improves throughput for data buffering and access patterns.
  • Consumer and industrial electronics — Provides a 256 Mbit SDRAM option in a compact 54‑TSOP II package for board-level designs operating within the commercial temperature range.

Unique Advantages

  • Proven PC100/PC133 compatibility: Directly supports PC100 and PC133 timing classes for legacy and standard synchronous memory designs.
  • Banked, pipelined architecture: Internal banks and pipelined column access enable consecutive column changes every clock cycle to improve effective throughput.
  • Flexible burst control: Programmable burst lengths (1, 2, 4, 8, full page) let designers tune transfer granularity to match system access patterns.
  • Compact surface-mount package: 54‑pin TSOP II (0.400", 10.16 mm width) supports dense PCB layouts where board area and height are constrained.
  • Wide supply tolerance: Operates from 3.0 V to 3.6 V, accommodating typical 3.3 V system rails and tolerance variations.
  • Standard commercial temperature range: Rated for 0 °C to +70 °C for common consumer and commercial applications.

Why Choose MT48LC16M16A2P-7E L:D TR?

The MT48LC16M16A2P-7E L:D TR positions itself as a straightforward, standards-aligned 256 Mbit SDRAM solution for designs that require PC100/PC133-compliant synchronous memory in a compact TSOP II footprint. Its 16M × 16 organization with internal banks, programmable burst lengths and documented timing options make it suitable for systems that need predictable, pipelined SDRAM behavior.

This device is appropriate for engineers and procurement teams targeting board-level integration where a 3.3 V-class parallel SDRAM in a 54‑TSOP II package fits form-factor and thermal requirements. The combination of documented timing grades, refresh capabilities and commercial temperature rating supports continued use in established designs and production environments.

Request a quote or submit an RFQ to obtain current pricing and availability for the MT48LC16M16A2P-7E L:D TR.

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