MT48LC16M16A2P-7E L:D
| Part Description |
IC DRAM 256MBIT PAR 54TSOP II |
|---|---|
| Quantity | 1,130 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 14 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 2 (1 Year) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT48LC16M16A2P-7E L:D – IC DRAM 256MBIT PAR 54TSOP II
The MT48LC16M16A2P-7E L:D is a 256 Mbit synchronous DRAM (SDRAM) organized as 16M × 16 with a parallel memory interface. It implements fully synchronous, pipelined SDRAM architecture with internal banks and programmable burst lengths for predictable, clocked memory access.
Targeted at systems requiring PC100/PC133-compliant SDRAM performance, this commercial-temperature device provides 133 MHz clock operation, a compact 54-pin TSOP II package, and a standard 3.3 V ±0.3 V supply range for straightforward integration into parallel-memory designs.
Key Features
- Memory Architecture 256 Mbit SDRAM organized as 16M × 16 with four internal banks (4 Meg × 16 × 4 banks in family documentation), enabling banked operation for higher effective throughput.
- SDR SDRAM Core Fully synchronous operation with all signals registered on the positive edge of the system clock and internal pipelined operation allowing column addresses to change every clock cycle.
- Performance & Timing PC100- and PC133-compliant; the -7E speed grade targets 133 MHz operation with RCD–RP–CL = 2–2–2 timing. Product specification lists 133 MHz clock frequency and 5.4 ns access time.
- Programmable Burst & Command Features Programmable burst lengths (1, 2, 4, 8, or full page), auto precharge modes, auto refresh, and self-refresh capability noted in the family documentation.
- Interface & I/O Parallel memory interface with LVTTL-compatible inputs and outputs as documented for the product family.
- Power Single 3.3 V ±0.3 V supply (product data shows 3.0 V to 3.6 V), and write cycle timing including a word/page write cycle time of 14 ns.
- Package & Temperature 54-pin TSOP II (0.400", 10.16 mm width) plastic package; operating temperature specified as 0°C to 70°C (commercial).
Typical Applications
- PC memory subsystems — Suitable for designs requiring PC100/PC133-compliant SDRAM in parallel memory architectures.
- Embedded system memory — Used as board-level SDRAM where a 256 Mbit, 16-bit wide parallel memory is required within commercial temperature ranges.
- General-purpose synchronous DRAM — Fits applications that need fully synchronous, pipelined SDRAM with programmable burst lengths and auto-refresh capabilities.
Unique Advantages
- PC100/PC133 compliance: Eases integration into systems designed around standard SDRAM timing and clock rates.
- Banked, pipelined architecture: Internal banks and pipelined operation enable reduced effective latency for sequential column accesses.
- Compact TSOP II package: 54-pin (0.400", 10.16 mm) TSOP II footprint conserves board area while providing a parallel 16-bit interface.
- Standard 3.3 V supply range: 3.0 V to 3.6 V operation aligns with common system power rails for straightforward power design.
- Flexible burst and refresh modes: Programmable burst lengths plus auto and self-refresh options give designers control over throughput and power behavior.
Why Choose IC DRAM 256MBIT PAR 54TSOP II?
The MT48LC16M16A2P-7E L:D provides a documented, PC100/PC133-compliant 256 Mbit SDRAM solution in a space-efficient 54-pin TSOP II package. Its 16M × 16 organization, internal bank structure, and programmable burst modes make it suitable for parallel-memory designs requiring predictable synchronous performance at 133 MHz.
Designed for commercial-temperature operation and standard 3.3 V supply environments, this device is appropriate for engineers specifying board-level SDRAM where family-level features such as auto-refresh, self-refresh, and LVTTL-compatible I/O are required.
For pricing, availability, or to request a formal quote for MT48LC16M16A2P-7E L:D, submit a quote request or contact sales with your quantity and delivery requirements.