MT48LC16M16A2P-7E L:D

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 1,130 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page14 nsPackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level2 (1 Year)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT48LC16M16A2P-7E L:D – IC DRAM 256MBIT PAR 54TSOP II

The MT48LC16M16A2P-7E L:D is a 256 Mbit synchronous DRAM (SDRAM) organized as 16M × 16 with a parallel memory interface. It implements fully synchronous, pipelined SDRAM architecture with internal banks and programmable burst lengths for predictable, clocked memory access.

Targeted at systems requiring PC100/PC133-compliant SDRAM performance, this commercial-temperature device provides 133 MHz clock operation, a compact 54-pin TSOP II package, and a standard 3.3 V ±0.3 V supply range for straightforward integration into parallel-memory designs.

Key Features

  • Memory Architecture 256 Mbit SDRAM organized as 16M × 16 with four internal banks (4 Meg × 16 × 4 banks in family documentation), enabling banked operation for higher effective throughput.
  • SDR SDRAM Core Fully synchronous operation with all signals registered on the positive edge of the system clock and internal pipelined operation allowing column addresses to change every clock cycle.
  • Performance & Timing PC100- and PC133-compliant; the -7E speed grade targets 133 MHz operation with RCD–RP–CL = 2–2–2 timing. Product specification lists 133 MHz clock frequency and 5.4 ns access time.
  • Programmable Burst & Command Features Programmable burst lengths (1, 2, 4, 8, or full page), auto precharge modes, auto refresh, and self-refresh capability noted in the family documentation.
  • Interface & I/O Parallel memory interface with LVTTL-compatible inputs and outputs as documented for the product family.
  • Power Single 3.3 V ±0.3 V supply (product data shows 3.0 V to 3.6 V), and write cycle timing including a word/page write cycle time of 14 ns.
  • Package & Temperature 54-pin TSOP II (0.400", 10.16 mm width) plastic package; operating temperature specified as 0°C to 70°C (commercial).

Typical Applications

  • PC memory subsystems — Suitable for designs requiring PC100/PC133-compliant SDRAM in parallel memory architectures.
  • Embedded system memory — Used as board-level SDRAM where a 256 Mbit, 16-bit wide parallel memory is required within commercial temperature ranges.
  • General-purpose synchronous DRAM — Fits applications that need fully synchronous, pipelined SDRAM with programmable burst lengths and auto-refresh capabilities.

Unique Advantages

  • PC100/PC133 compliance: Eases integration into systems designed around standard SDRAM timing and clock rates.
  • Banked, pipelined architecture: Internal banks and pipelined operation enable reduced effective latency for sequential column accesses.
  • Compact TSOP II package: 54-pin (0.400", 10.16 mm) TSOP II footprint conserves board area while providing a parallel 16-bit interface.
  • Standard 3.3 V supply range: 3.0 V to 3.6 V operation aligns with common system power rails for straightforward power design.
  • Flexible burst and refresh modes: Programmable burst lengths plus auto and self-refresh options give designers control over throughput and power behavior.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

The MT48LC16M16A2P-7E L:D provides a documented, PC100/PC133-compliant 256 Mbit SDRAM solution in a space-efficient 54-pin TSOP II package. Its 16M × 16 organization, internal bank structure, and programmable burst modes make it suitable for parallel-memory designs requiring predictable synchronous performance at 133 MHz.

Designed for commercial-temperature operation and standard 3.3 V supply environments, this device is appropriate for engineers specifying board-level SDRAM where family-level features such as auto-refresh, self-refresh, and LVTTL-compatible I/O are required.

For pricing, availability, or to request a formal quote for MT48LC16M16A2P-7E L:D, submit a quote request or contact sales with your quantity and delivery requirements.

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