MT48LC16M16A2P-7E IT:D

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 197 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page14 nsPackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level2 (1 Year)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT48LC16M16A2P-7E IT:D – IC DRAM 256MBIT PAR 54TSOP II

The MT48LC16M16A2P-7E IT:D is a 256 Mbit synchronous DRAM organized as 16M × 16 with four internal banks and a parallel SDRAM interface. It is supplied in a 54-pin TSOP II (400 mil, 10.16 mm width) package and is offered in the -7E speed grade targeted at 133 MHz operation.

Designed for systems that require standard PC100/PC133-compliant SDRAM behavior, this device provides synchronous, pipelined operation with programmable burst lengths, auto-refresh/autoprecharge functionality and support for self-refresh (where available per device option). Electrical and environmental specs include a 3.0 V–3.6 V supply range and an industrial operating temperature of -40°C to +85°C.

Key Features

  • Memory Core & Organization 256 Mbit SDRAM organized as 16M × 16 with four internal banks for improved row/column interleaving and throughput.
  • Synchronous SDRAM Architecture Fully synchronous operation with all signals registered on the positive edge of the system clock and internal pipelined operation allowing column address changes every clock cycle.
  • Performance PC100- and PC133-compliant behavior with a clock frequency of 133 MHz for the -7E speed grade and an access time listed at 5.4 ns. CAS latency timing options are defined in the product data for the -7E grade.
  • Burst & Access Modes Programmable burst lengths (1, 2, 4, 8, or full page), auto precharge and concurrent auto precharge/auto refresh modes to simplify memory sequencing.
  • Refresh & Low-Power Modes Auto refresh and self-refresh capability (self-refresh not available on AT device variants) with 8K refresh cycles supported for the 256 Mb parts.
  • Power Single-supply operation at 3.0 V–3.6 V (3.3 V ±0.3 V) suitable for standard 3.3 V SDRAM systems.
  • Interface & I/O LVTTL-compatible inputs and outputs with a parallel SDRAM interface suitable for standard memory controller integration.
  • Package & Temperature 54-pin TSOP II (400 mil) package (10.16 mm width) and industrial operating temperature range of -40°C to +85°C.
  • Timing & Write Recovery Write cycle / page write recovery time of 14 ns as specified for this device.

Typical Applications

  • PC100/PC133 Memory Subsystems — Use as synchronous DRAM in memory subsystems where PC100/PC133 timing compliance is required.
  • Industrial Embedded Systems — Industrial temperature range (-40°C to +85°C) makes this device suitable for embedded platforms operating in extended-temperature environments.
  • High‑throughput Parallel Memory Interfaces — Parallel SDRAM interface and internal bank architecture support designs needing pipelined, burst-access memory.

Unique Advantages

  • Standardized PC100/PC133 support: Ensures compatibility with systems expecting PC-class SDRAM timing and behavior.
  • Flexible burst and refresh modes: Programmable burst lengths plus auto-refresh and self-refresh options simplify controller design and memory management.
  • Industrial temperature rating: -40°C to +85°C operation supports deployment in harsher environments than commercial-temperature parts.
  • Compact, industry-standard package: 54-pin TSOP II (400 mil) package provides a space-efficient footprint for board-level integration.
  • Synchronous, pipelined operation: Column address changes every clock cycle and internal banks improve effective throughput for burst and random access patterns.
  • Common 3.3 V supply: Operates from 3.0 V–3.6 V, aligning with standard 3.3 V system power rails.

Why Choose MT48LC16M16A2P-7E IT:D?

The MT48LC16M16A2P-7E IT:D provides a proven 256 Mbit SDRAM building block with PC100/PC133-compatible synchronous architecture, programmable burst behavior, and standard electrical interfaces. Its 16M × 16 organization with four internal banks and pipelined operation supports designers targeting parallel SDRAM subsystems that require predictable timing and burst performance.

With a 54-pin TSOP II package, industrial temperature rating and standard 3.3 V supply range, this device is well suited to embedded and industrial memory applications where compact packaging and extended-temperature operation are required. The combination of refresh modes, auto precharge and LVTTL-compatible I/O helps simplify memory controller design and system integration.

Request a quote or submit a product inquiry to obtain pricing, availability and additional ordering information for the MT48LC16M16A2P-7E IT:D.

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