MT48LC16M16A2P-7E IT:D
| Part Description |
IC DRAM 256MBIT PAR 54TSOP II |
|---|---|
| Quantity | 197 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 14 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 2 (1 Year) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT48LC16M16A2P-7E IT:D – IC DRAM 256MBIT PAR 54TSOP II
The MT48LC16M16A2P-7E IT:D is a 256 Mbit synchronous DRAM organized as 16M × 16 with four internal banks and a parallel SDRAM interface. It is supplied in a 54-pin TSOP II (400 mil, 10.16 mm width) package and is offered in the -7E speed grade targeted at 133 MHz operation.
Designed for systems that require standard PC100/PC133-compliant SDRAM behavior, this device provides synchronous, pipelined operation with programmable burst lengths, auto-refresh/autoprecharge functionality and support for self-refresh (where available per device option). Electrical and environmental specs include a 3.0 V–3.6 V supply range and an industrial operating temperature of -40°C to +85°C.
Key Features
- Memory Core & Organization 256 Mbit SDRAM organized as 16M × 16 with four internal banks for improved row/column interleaving and throughput.
- Synchronous SDRAM Architecture Fully synchronous operation with all signals registered on the positive edge of the system clock and internal pipelined operation allowing column address changes every clock cycle.
- Performance PC100- and PC133-compliant behavior with a clock frequency of 133 MHz for the -7E speed grade and an access time listed at 5.4 ns. CAS latency timing options are defined in the product data for the -7E grade.
- Burst & Access Modes Programmable burst lengths (1, 2, 4, 8, or full page), auto precharge and concurrent auto precharge/auto refresh modes to simplify memory sequencing.
- Refresh & Low-Power Modes Auto refresh and self-refresh capability (self-refresh not available on AT device variants) with 8K refresh cycles supported for the 256 Mb parts.
- Power Single-supply operation at 3.0 V–3.6 V (3.3 V ±0.3 V) suitable for standard 3.3 V SDRAM systems.
- Interface & I/O LVTTL-compatible inputs and outputs with a parallel SDRAM interface suitable for standard memory controller integration.
- Package & Temperature 54-pin TSOP II (400 mil) package (10.16 mm width) and industrial operating temperature range of -40°C to +85°C.
- Timing & Write Recovery Write cycle / page write recovery time of 14 ns as specified for this device.
Typical Applications
- PC100/PC133 Memory Subsystems — Use as synchronous DRAM in memory subsystems where PC100/PC133 timing compliance is required.
- Industrial Embedded Systems — Industrial temperature range (-40°C to +85°C) makes this device suitable for embedded platforms operating in extended-temperature environments.
- High‑throughput Parallel Memory Interfaces — Parallel SDRAM interface and internal bank architecture support designs needing pipelined, burst-access memory.
Unique Advantages
- Standardized PC100/PC133 support: Ensures compatibility with systems expecting PC-class SDRAM timing and behavior.
- Flexible burst and refresh modes: Programmable burst lengths plus auto-refresh and self-refresh options simplify controller design and memory management.
- Industrial temperature rating: -40°C to +85°C operation supports deployment in harsher environments than commercial-temperature parts.
- Compact, industry-standard package: 54-pin TSOP II (400 mil) package provides a space-efficient footprint for board-level integration.
- Synchronous, pipelined operation: Column address changes every clock cycle and internal banks improve effective throughput for burst and random access patterns.
- Common 3.3 V supply: Operates from 3.0 V–3.6 V, aligning with standard 3.3 V system power rails.
Why Choose MT48LC16M16A2P-7E IT:D?
The MT48LC16M16A2P-7E IT:D provides a proven 256 Mbit SDRAM building block with PC100/PC133-compatible synchronous architecture, programmable burst behavior, and standard electrical interfaces. Its 16M × 16 organization with four internal banks and pipelined operation supports designers targeting parallel SDRAM subsystems that require predictable timing and burst performance.
With a 54-pin TSOP II package, industrial temperature rating and standard 3.3 V supply range, this device is well suited to embedded and industrial memory applications where compact packaging and extended-temperature operation are required. The combination of refresh modes, auto precharge and LVTTL-compatible I/O helps simplify memory controller design and system integration.
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