MT48LC16M16A2P-7E IT:D TR

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 1,257 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page14 nsPackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT48LC16M16A2P-7E IT:D TR – IC DRAM 256Mbit, 54‑pin TSOP II

The MT48LC16M16A2P-7E IT:D TR is a 256 Mbit, parallel SDRAM device organized as 16M × 16 with four internal banks. It implements fully synchronous SDR SDRAM architecture and targets systems requiring PC100/PC133‑compliant parallel DRAM in a 54‑pin TSOP II package with industrial temperature range.

Key Features

  • Core / Memory Organization 256 Mbit SDRAM organized as 16M × 16 with four internal banks, enabling banked row access for improved command throughput.
  • Performance / Timing PC100- and PC133‑compliant operation with a 133 MHz clock frequency and an Access Time of 5.4 ns; write cycle time (word/page) of 14 ns. Speed grade -7E targets 2-2-2 timing.
  • Synchronous, Pipelined Operation Fully synchronous design with signals registered on the positive clock edge and internal pipelined operation that allows column address changes every clock cycle.
  • Programmable Burst & Refresh Programmable burst lengths of 1, 2, 4, 8 or full page; supports auto refresh and a 64 ms, 8192‑cycle refresh mode for commercial/industrial use. Self refresh mode is provided (not available on AT devices).
  • Power Single 3.3 V power supply (3.0 V to 3.6 V specified), LVTTL‑compatible inputs and outputs.
  • Package & Temperature 54‑pin TSOP II (0.400", 10.16 mm width) plastic package; specified operating temperature range of -40 °C to +85 °C (TA).

Typical Applications

  • Embedded Systems Provides parallel SDRAM capacity and timing suitable for embedded controllers and memory subsystems requiring standard PC100/PC133 SDRAM.
  • Industrial Equipment Industrial temperature rating (-40 °C to +85 °C) supports designs deployed in temperature‑challenging environments.
  • Legacy Parallel SDRAM Designs Fits systems using parallel SDRAM interfaces and standard 54‑pin TSOP II footprints for memory expansion or replacement.
  • Buffered Data Throughput Internal pipelining and multi‑bank architecture help sustain column operations and burst transfers in data‑buffering applications.

Unique Advantages

  • PC100 / PC133 Compatibility: Meets PC100 and PC133 timing targets for straightforward integration into compliant platforms.
  • Industrial Temperature Range: Rated from -40 °C to +85 °C (TA), enabling use in industrial assemblies where extended ambient ranges are required.
  • Standard 54‑TSOP II Footprint: 0.400" (10.16 mm) width package simplifies board layout for designs using widely adopted TSOP II form factors.
  • Synchronous, Pipelined Access: Fully synchronous operation with pipelining and multi‑bank architecture improves effective throughput for burst and column‑oriented transfers.
  • Flexible Burst & Refresh Modes: Programmable burst lengths and auto/self refresh support simplify memory timing management and power handling strategies.
  • Single 3.3 V Supply: Operates from a single 3.0 V to 3.6 V supply, matching common SDRAM power rails for system simplicity.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

The MT48LC16M16A2P-7E IT:D TR combines a standard 54‑pin TSOP II package, PC100/PC133‑class synchronous SDRAM timing, and an industrial operating temperature range to serve designs that require parallel SDRAM capacity and predictable timing. Its 16M × 16 organization with four internal banks and programmable burst options provide flexibility for buffering and burst‑oriented data flows.

This device is suitable for engineering teams and procurement seeking a Micron‑manufactured SDRAM device with established timing modes, industrial temperature capability, and a common TSOP II footprint—offering straightforward integration into existing parallel SDRAM memory subsystems.

Request a quote or submit an inquiry for pricing and availability for the MT48LC16M16A2P-7E IT:D TR.

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