MT48LC16M16A2P-7E IT:D TR
| Part Description |
IC DRAM 256MBIT PAR 54TSOP II |
|---|---|
| Quantity | 1,257 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 14 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT48LC16M16A2P-7E IT:D TR – IC DRAM 256Mbit, 54‑pin TSOP II
The MT48LC16M16A2P-7E IT:D TR is a 256 Mbit, parallel SDRAM device organized as 16M × 16 with four internal banks. It implements fully synchronous SDR SDRAM architecture and targets systems requiring PC100/PC133‑compliant parallel DRAM in a 54‑pin TSOP II package with industrial temperature range.
Key Features
- Core / Memory Organization 256 Mbit SDRAM organized as 16M × 16 with four internal banks, enabling banked row access for improved command throughput.
- Performance / Timing PC100- and PC133‑compliant operation with a 133 MHz clock frequency and an Access Time of 5.4 ns; write cycle time (word/page) of 14 ns. Speed grade -7E targets 2-2-2 timing.
- Synchronous, Pipelined Operation Fully synchronous design with signals registered on the positive clock edge and internal pipelined operation that allows column address changes every clock cycle.
- Programmable Burst & Refresh Programmable burst lengths of 1, 2, 4, 8 or full page; supports auto refresh and a 64 ms, 8192‑cycle refresh mode for commercial/industrial use. Self refresh mode is provided (not available on AT devices).
- Power Single 3.3 V power supply (3.0 V to 3.6 V specified), LVTTL‑compatible inputs and outputs.
- Package & Temperature 54‑pin TSOP II (0.400", 10.16 mm width) plastic package; specified operating temperature range of -40 °C to +85 °C (TA).
Typical Applications
- Embedded Systems Provides parallel SDRAM capacity and timing suitable for embedded controllers and memory subsystems requiring standard PC100/PC133 SDRAM.
- Industrial Equipment Industrial temperature rating (-40 °C to +85 °C) supports designs deployed in temperature‑challenging environments.
- Legacy Parallel SDRAM Designs Fits systems using parallel SDRAM interfaces and standard 54‑pin TSOP II footprints for memory expansion or replacement.
- Buffered Data Throughput Internal pipelining and multi‑bank architecture help sustain column operations and burst transfers in data‑buffering applications.
Unique Advantages
- PC100 / PC133 Compatibility: Meets PC100 and PC133 timing targets for straightforward integration into compliant platforms.
- Industrial Temperature Range: Rated from -40 °C to +85 °C (TA), enabling use in industrial assemblies where extended ambient ranges are required.
- Standard 54‑TSOP II Footprint: 0.400" (10.16 mm) width package simplifies board layout for designs using widely adopted TSOP II form factors.
- Synchronous, Pipelined Access: Fully synchronous operation with pipelining and multi‑bank architecture improves effective throughput for burst and column‑oriented transfers.
- Flexible Burst & Refresh Modes: Programmable burst lengths and auto/self refresh support simplify memory timing management and power handling strategies.
- Single 3.3 V Supply: Operates from a single 3.0 V to 3.6 V supply, matching common SDRAM power rails for system simplicity.
Why Choose IC DRAM 256MBIT PAR 54TSOP II?
The MT48LC16M16A2P-7E IT:D TR combines a standard 54‑pin TSOP II package, PC100/PC133‑class synchronous SDRAM timing, and an industrial operating temperature range to serve designs that require parallel SDRAM capacity and predictable timing. Its 16M × 16 organization with four internal banks and programmable burst options provide flexibility for buffering and burst‑oriented data flows.
This device is suitable for engineering teams and procurement seeking a Micron‑manufactured SDRAM device with established timing modes, industrial temperature capability, and a common TSOP II footprint—offering straightforward integration into existing parallel SDRAM memory subsystems.
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