MT48LC16M16A2P-7E IT:G TR
| Part Description |
IC DRAM 256MBIT PAR 54TSOP II |
|---|---|
| Quantity | 198 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 14 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT48LC16M16A2P-7E IT:G TR – IC DRAM 256MBIT PAR 54TSOP II
The MT48LC16M16A2P-7E IT:G TR is a 256 Mbit SDRAM device organized as 16M × 16 with a parallel memory interface in a 54‑pin TSOP II package. It implements fully synchronous SDR SDRAM architecture with internal banking and pipelined operation for predictable, clock‑aligned memory access.
This device operates from a single 3.3 V supply (3.0 V to 3.6 V) and supports 133 MHz clocking and PC100/PC133 timing grades, making it suitable for systems that require standard synchronous DRAM performance across a commercial and industrial operating temperature range.
Key Features
- Core architecture — Fully synchronous SDR SDRAM with registered inputs on the positive clock edge and internal pipelined operation to support next‑cycle column address changes.
- Memory organization — 256 Mbit capacity arranged as 16M × 16 with four internal banks to improve access concurrency and throughput.
- Timing and performance — Supports 133 MHz clock frequency (PC133) and timing options including the -7E grade (2-2-2 RCD-RP-CL); datasheet lists access timing and cycle parameters for precise system timing. Specified access time: 5.4 ns; write cycle time (word/page): 14 ns.
- Programmable burst and refresh — Programmable burst lengths (1, 2, 4, 8, or full page), auto precharge, auto refresh and self refresh modes as described in the device documentation.
- Power — Single 3.3 V ±0.3 V supply (specified 3.0 V to 3.6 V operating range) with LVTTL‑compatible inputs and outputs.
- Package — 54‑pin TSOP II (400 mil / 10.16 mm width) plastic package (54‑TSOP II) for surface mounting and predictable board integration.
- Operating temperature — Specified for -40 °C to +85 °C (TA), suitable for industrial temperature applications.
Typical Applications
- PC and legacy system memory — Use in systems requiring PC100/PC133 SDRAM timing and standard parallel SDRAM interfaces.
- Embedded systems — Local DRAM for embedded controllers and processors that require a 16‑bit parallel SDRAM interface and 3.3 V supply.
- Industrial equipment — Memory for industrial platforms that need operation across -40 °C to +85 °C.
Unique Advantages
- Standard SDRAM timing profiles — PC100 and PC133 compliance with documented RCD/RP/CL timing options (including -7E grade) enables integration with established memory controllers and timing requirements.
- Flexible burst and bank management — Programmable burst lengths and four internal banks help optimize sequential and random access patterns without external complexity.
- Predictable synchronous operation — All signals registered on the positive clock edge and pipelined internal operation simplify timing closure and system design.
- Industrial temperature capability — Rated for -40 °C to +85 °C to support systems deployed in wider temperature environments.
- Standard 54‑pin TSOP II package — Common surface‑mount package for straightforward PCB layout and assembly in space‑constrained board designs.
- Single 3.3 V supply compatibility — Operates from a single 3.3 V supply (3.0 V–3.6 V), matching common legacy and embedded power rails.
Why Choose IC DRAM 256MBIT PAR 54TSOP II?
The MT48LC16M16A2P-7E IT:G TR provides a documented SDR SDRAM solution with 256 Mbit capacity, standard PC100/PC133 timing options, and a 54‑pin TSOP II footprint for predictable integration. Its 16M × 16 organization, programmable burst modes, and internal banking make it suitable for systems that require synchronous parallel DRAM with industrial temperature support.
This device is suited to designers and procurement for legacy, embedded, and industrial systems that need a 3.3 V SDRAM with established timing grades and a compact TSOP II package. The combination of documented timing options, single‑supply operation, and industrial temperature range supports robust, maintainable memory designs.
Request a quote or submit an inquiry to receive pricing and availability for MT48LC16M16A2P-7E IT:G TR and to discuss how this SDRAM device fits your system requirements.