MT48LC2M32B2TG-7 IT:G TR

The MT48LC2M32B2TG-7 IT:G TR is a 64 Mbit (2M × 32) single-data-rate (SDR) DRAM in an 86-pin TSOP II package. It is a fully synchronous, parallel-interface memory device designed for systems requiring PC100-compliant SDRAM functionality with selectable burst lengths and CAS latency options.

This device targets applications that need a compact 32-bit parallel memory solution with a 3.0–3.6 V supply range and an industrial operating temperature range of –40°C to +85°C, delivered in a 400 mil (10.16 mm) TSOP II footprint.

Key Features

• Memory Architecture — 64 Mbit capacity organized as 2M × 32 with 4 internal banks (512K × 32 × 4 banks) for banked operation and improved access concurrency.
• SDR SDRAM Core — Fully synchronous operation with all signals registered on the positive edge of the system clock and internal pipelined operation allowing column address changes every clock cycle.
• Performance and Timing — Specified clock frequency of 143 MHz for the -7 speed grade, access time 5.5 ns, and write cycle time (word page) of 14 ns. Supports CAS latencies 1, 2 and 3.
• Burst and Refresh Features — Programmable burst lengths (1, 2, 4, 8, full page), auto precharge, auto refresh, and self-refresh modes (self-refresh note: not available on AT devices). Refresh options include 64 ms/4096-cycle.
• Interface and Logic Levels — Parallel memory interface with LVTTL-compatible inputs and outputs for standard logic-level integration.
• Power — Single 3.3 V ±0.3 V supply (3.0 V to 3.6 V) for system power planning.
• Package and Temperature — 86-pin TSOP II (400 mil / 10.16 mm width) plastic package; operating temperature range –40°C to +85°C (TA).

Typical Applications

• Embedded systems — Provides parallel SDRAM capacity for embedded designs that require a 32-bit SDRAM data path and PC100-compliant memory timing.
• Industrial control — Industrial temperature rating (–40°C to +85°C) supports designs deployed in temperature-challenging environments.
• Legacy and PC100-class systems — PC100-compliant SDRAM timing and programmable burst lengths make it appropriate for systems designed around PC100-class memory interfaces.

Unique Advantages

• Parallel 32-bit data path: 2M × 32 organization delivers 64 Mbit density with a full 32-bit bus for straightforward parallel memory integration.
• Synchronous, pipelined operation: Registered signals and internal pipelining permit predictable timing and column-address changes every clock cycle for efficient burst transfers.
• Flexible latency and burst control: Programmable burst lengths and support for CAS latencies 1–3 allow designers to tune read/write behavior to system timing requirements.
• Industrial-temperature rating: Specified operation from –40°C to +85°C enables use in temperature-sensitive industrial deployments.
• Standard 86-pin TSOP II packaging: 400 mil (10.16 mm) TSOP II package simplifies PCB layout and assembly where this form factor is required.
• Single-supply 3.3 V operation: 3.0–3.6 V supply range aligns with common system power rails for straightforward power sequencing.

Why Choose MT48LC2M32B2TG-7 IT:G TR?

The MT48LC2M32B2TG-7 IT:G TR is positioned for designs that require a compact, parallel 32-bit SDRAM device with PC100-class timing, selectable burst operation, and industrial temperature performance. Its synchronous, pipelined architecture and flexible latency options provide predictable timing behavior for embedded and industrial applications.

Choose this device when you need a 64 Mbit SDRAM in an 86-pin TSOP II package with a 3.0–3.6 V supply envelope and –40°C to +85°C operating range. The combination of banked memory organization, programmable bursts, and standard logic-level compatibility supports integration into systems that rely on parallel SDRAM memory resources.

Request a quote or submit a sales inquiry for the MT48LC2M32B2TG-7 IT:G TR to discuss pricing, availability, and ordering options for your project.