MT48LC32M16A2P-75 L:C

IC DRAM 512MBIT PAR 54TSOP II
Part Description

IC DRAM 512MBIT PAR 54TSOP II

Quantity 1,940 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size512 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level4 (72 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT48LC32M16A2P-75 L:C – IC DRAM 512MBIT PAR 54TSOP II

The MT48LC32M16A2P-75 L:C is a 512 Mbit SDR SDRAM device from Micron Technology packaged in a 54-pin TSOP II (400 mil) form factor. It implements a 32M × 16 memory organization with a parallel interface and is designed for synchronous DRAM applications that require PC100/PC133-class timing.

With a single 3.3 V ±0.3 V supply, fully synchronous operation, internal pipelining and banked architecture, this device addresses system designs needing deterministic, clocked memory access and standard SDRAM functionality within a compact TSOP footprint.

Key Features

  • Memory Architecture  32M × 16 organization delivering 512 Mbit of SDRAM storage across four internal banks.
  • SDR SDRAM, PC100/PC133-compliant  Fully synchronous SDRAM compatible with PC100 and PC133 timing; all signals are registered on the positive edge of the system clock.
  • Clock and Timing  Supports up to 133 MHz clock frequency with 5.4 ns access time (CL = 3, -75 speed grade).
  • Pipelined Internal Operation  Internal pipelining allows column address changes every clock cycle and helps maintain throughput in sequential access patterns.
  • Programmable Burst and Bank Management  Programmable burst lengths (1, 2, 4, 8, or full page) and multiple internal banks for hiding row access/precharge cycles.
  • Refresh and Power Modes  Auto refresh, self-refresh mode and 64 ms / 8192-cycle refresh support to maintain data integrity over standard operating conditions.
  • Voltage and I/O  Single 3.3 V ±0.3 V supply with LVTTL-compatible inputs and outputs; specified supply range 3.0 V to 3.6 V.
  • Package and Thermal  54-pin TSOP II (0.400", 10.16 mm width) package optimized for board-level mounting; commercial operating temperature range 0 °C to 70 °C (TA).
  • Write and Cycle Performance  Write cycle time (word/page) specified at 15 ns for supported timing modes.

Typical Applications

  • System memory for synchronous platforms  Used as parallel SDRAM in systems requiring PC100/PC133-compliant synchronous memory.
  • High-speed buffering  Pipelined operation and programmable burst lengths enable efficient buffering and burst transfers in clocked data paths.
  • Board-level memory expansion  Compact 54-TSOP II package provides a space-efficient option for adding volatile DRAM capacity to PCBs.

Unique Advantages

  • Synchronous, predictable timing: Fully synchronous design with registered signals and PC100/PC133 compliance simplifies timing closure for clocked systems.
  • Flexible burst and bank control: Programmable burst lengths and internal banks reduce effective latency for sequential and random access patterns.
  • Industry-standard supply and I/O: Single 3.3 V supply and LVTTL-compatible I/O make integration straightforward with common legacy logic levels.
  • Compact board footprint: 54-pin TSOP II packaging offers a dense package option for space-constrained board designs.
  • Maintains data integrity: Auto refresh and self-refresh modes plus 8K refresh cycles per 64 ms ensure reliable operation across supported temperature ranges.

Why Choose IC DRAM 512MBIT PAR 54TSOP II?

The MT48LC32M16A2P-75 L:C provides a straightforward, standards-based SDRAM solution for designs that require 512 Mbit of volatile memory in a compact TSOP II package. Its PC100/PC133-compliant timing, pipelined internal architecture, and programmable burst capabilities make it suitable for clocked system memory and buffering tasks where synchronous, parallel DRAM is required.

This device is appropriate for engineering teams seeking predictable timing, a common 3.3 V interface, and a compact footprint for board-level integration. Its documented timing parameters, refresh mechanisms and commercial temperature rating support reliable deployment within the stated operating limits.

Please request a quote or contact sales to submit a quote request for the MT48LC32M16A2P-75 L:C.

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