MT48LC32M16A2P-75:C TR
| Part Description |
IC DRAM 512MBIT PAR 54TSOP II |
|---|---|
| Quantity | 838 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | N/A | REACH Compliance | N/A | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of MT48LC32M16A2P-75:C TR – IC DRAM 512MBIT PAR 54TSOP II
The MT48LC32M16A2P-75:C TR is a 512 Mbit synchronous DRAM (SDRAM) device organized as 32M × 16 with a parallel memory interface. It implements a fully synchronous, pipelined architecture with internal banks and programmable burst lengths to support high-throughput memory operations.
Designed for systems requiring PC100/PC133-compliant SDRAM operation, this part provides 133 MHz clock operation with low access latency, standard 54-pin TSOP II packaging, and a single 3.3 V-class power supply for board-level memory expansion.
Key Features
- Memory Architecture 512 Mbit SDRAM organized as 32M × 16 with internal bank structure (4 banks) to improve access concurrency and throughput.
- SDR SDRAM Compliance PC100- and PC133-compliant device with fully synchronous operation and all signals registered on the positive edge of the system clock.
- Performance & Timing Clock frequency up to 133 MHz with an access time of 5.4 ns (CL = 3, -75 speed grade) and a write cycle time (word/page) of 15 ns for predictable timing behavior.
- Programmable Burst & Internal Pipelining Supports programmable burst lengths (1, 2, 4, 8, or full page) and internal pipelined operation allowing column address changes every clock cycle.
- Refresh & Power Modes Auto refresh and self-refresh modes supported with a 64 ms, 8192-cycle refresh scheme; single 3.3 V ±0.3 V supply (listed as 3.0 V to 3.6 V).
- I/O Compatibility LVTTL-compatible inputs and outputs for standard logic-level interfacing.
- Package & Mounting 54-pin TSOP II (0.400", 10.16 mm width) plastic package for surface-mount board integration; commercial operating temperature range 0°C to 70°C (TA).
Typical Applications
- PC100/PC133 memory subsystems Use as system DRAM in platforms targeting PC100 or PC133 SDRAM compatibility.
- Board-level memory expansion 54-pin TSOP II package enables addition of parallel SDRAM where a 3.3 V single-supply memory is required.
- Embedded systems with parallel SDRAM interface Parallel memory interface and LVTTL I/Os make the device suitable for embedded designs requiring synchronous DRAM storage.
Unique Advantages
- Low access latency: With a specified access time of 5.4 ns (CL = 3 at 133 MHz), the device delivers quick data access for time-sensitive memory operations.
- Standard SDRAM timing compatibility: PC100/PC133 compliance simplifies integration into existing SDRAM-based designs.
- Flexible burst operation: Programmable burst lengths and internal pipelining allow designers to optimize throughput for sequential and random access patterns.
- Single-supply operation: Operates from a 3.0 V to 3.6 V supply, matching common 3.3 V system power rails.
- Board-friendly package: 54-pin TSOP II (400 mil) packaging supports compact surface-mount implementations.
- Commercial temperature range: Rated for 0°C to 70°C (TA) for use in standard commercial environments.
Why Choose IC DRAM 512MBIT PAR 54TSOP II?
The MT48LC32M16A2P-75:C TR offers a straightforward SDRAM solution when you need 512 Mbit of parallel synchronous memory with PC100/PC133 timing compatibility, low access latency, and programmable burst operation. Its 54-pin TSOP II package and single 3.3 V-class supply make it suitable for board-level memory expansion in commercial systems and embedded designs.
Manufactured by Micron Technology, the device combines standard SDRAM features—internal banks, auto-refresh/self-refresh modes, and LVTTL I/Os—to provide predictable performance and integration ease for engineers specifying parallel SDRAM in new or legacy platforms.
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