MT48LC32M16A2TG-75:C TR

The MT48LC32M16A2TG-75:C TR is a 512 Mbit synchronous DRAM (SDRAM) device organized as 32M × 16 with a parallel memory interface. It implements fully synchronous, pipelined operation with internal banks and programmable burst lengths to support burst read/write access patterns.

This device targets systems that require 512 Mbit parallel SDRAM in a 54-pin TSOP II (400 mil / 10.16 mm width) package, supporting PC100 and PC133 operation with a single 3.3 V supply and commercial operating temperature range (0 °C to +70 °C).

Key Features

• Core / Architecture 32M × 16 organization with 4 internal banks and fully synchronous SDRAM operation; all signals are registered on the positive edge of the system clock.
• Performance / Timing PC100- and PC133-compliant operation up to 133 MHz clock frequency with a typical access time of 5.4 ns and support for CAS latencies corresponding to the -75 speed grade.
• Burst and Bank Management Programmable burst lengths (1, 2, 4, 8, or full page) and internal bank architecture to enable pipelined column access and concurrent auto precharge/auto refresh modes.
• Refresh and Power Modes Supports auto refresh and self-refresh modes with a 64 ms, 8192-cycle refresh count; single 3.3 V ±0.3 V power supply (spec shown as 3.0 V to 3.6 V).
• Interface and I/O LVTTL-compatible inputs and outputs with a parallel SDRAM interface suitable for systems expecting standard SDRAM signaling.
• Package 54-pin TSOP II (400 mil / 10.16 mm width) plastic package (standard TG option) for compact board-level integration.
• Operating Range Commercial temperature operation from 0 °C to +70 °C (TA).

Typical Applications

• PC100 / PC133 memory subsystems — Use as parallel SDRAM in systems conforming to PC100 or PC133 timing and signaling requirements.
• Embedded systems with parallel memory bus — Provides 512 Mbit of SDRAM in a 54-pin TSOP II footprint for compact board designs requiring synchronous DRAM.
• Systems requiring burst access — Programmable burst lengths and internal banks support pipelined column access and burst-oriented workloads.
• Commercial temperature applications — Suitable for designs operating in the 0 °C to +70 °C ambient range.

Unique Advantages

• 512 Mbit density in a single device: Delivers 32M × 16 organization for higher memory capacity per package without additional board-level components.
• PC100 / PC133 compatibility: Designed to meet PC100 and PC133 timing classes and supports operation at up to 133 MHz, enabling straightforward integration into compliant systems.
• Flexible burst operation: Programmable burst lengths (1, 2, 4, 8, or full page) simplify handling of sequential data transfers and improve throughput for burst-oriented accesses.
• Robust refresh and low-power modes: Auto refresh and self-refresh support (8192-cycle refresh, 64 ms) allow retained data across refresh cycles and reduced power scenarios.
• Standard 54-pin TSOP II package: Compact 400 mil TSOP II footprint eases placement in space-constrained boards while maintaining a parallel SDRAM interface.
• Single-supply operation: Operates from a single 3.0 V to 3.6 V supply (typical 3.3 V ±0.3 V) for simplified power-system design.

Why Choose MT48LC32M16A2TG-75:C TR?

The MT48LC32M16A2TG-75:C TR is a straightforward, standards-based 512 Mbit SDRAM device from Micron Technology, Inc., offering PC100/PC133 compatibility, 32M × 16 organization, and a compact 54-pin TSOP II package. Its combination of programmable burst lengths, internal banks, and self-refresh/auto-refresh capabilities make it suitable for designs that require synchronous burst memory with a parallel interface and commercial temperature operation.

This part is well suited to engineers and procurement teams specifying parallel SDRAM where verified timing (5.4 ns access at 133 MHz), single-supply 3.3 V operation, and a known TSOP II footprint are required for system integration and long-term BOM planning.

Request a quote or contact sales for pricing and availability of the MT48LC32M16A2TG-75:C TR.