MT48LC32M16A2P-75 L:C TR

The MT48LC32M16A2P-75 L:C TR is a 512 Mbit synchronous DRAM (SDRAM) device organized as 32M × 16 with a parallel memory interface in a 54-pin TSOP II package. It implements fully synchronous, pipelined operation with internal banking and supports PC100 and PC133 timing.

Designed for systems requiring parallel SDRAM at standard 3.3 V supply ranges, this device delivers deterministic access timing (133 MHz, 5.4 ns access time for the -75 grade) and standard SDRAM refresh and power modes to simplify integration into commercial-temperature applications.

Key Features

• Core / Architecture  Fully synchronous SDRAM with all signals registered on the positive edge of the system clock and internal pipelined operation that allows column address changes every clock cycle.
• Memory Organization  512 Mbit capacity organized as 32M × 16 with internal banks to hide row access and precharge operations.
• Timing & Performance  PC100- and PC133-compliant timing; -75 speed grade supports 133 MHz operation with a 5.4 ns access time (CL = 3).
• Burst & Access Modes  Programmable burst lengths (1, 2, 4, 8, or full page); supports auto precharge, concurrent auto precharge, auto refresh and self-refresh modes.
• Interface  Parallel memory interface with LVTTL-compatible inputs and outputs for standard SDRAM system integration.
• Power  Single-supply operation at 3.3 V (3.0 V to 3.6 V specified).
• Timing Details  Write cycle time (word/page) specified at 15 ns; detailed timing parameters available in the product datasheet.
• Package & Mounting  54-pin TSOP II (400 mil / 10.16 mm width) plastic package for surface-mount mounting.
• Operating Range  Commercial-temperature device rated for 0°C to +70°C (TA).

Typical Applications

• PC100 / PC133 memory subsystems  Compatible with PC100 and PC133 timing requirements for systems that use parallel SDRAM memory modules.
• Embedded systems with parallel SDRAM  Provides 512 Mbit of synchronous DRAM for embedded platforms that require a parallel SDRAM interface at 3.3 V.
• Buffer and frame storage  Used where a 512 Mbit parallel SDRAM device is needed for temporary frame, buffer, or working memory in commercial-temperature designs.

Unique Advantages

• PC100/PC133-compliant timing: Ensures predictable operation at standard SDRAM clock rates up to 133 MHz for designs targeting those timing classes.
• Synchronous, pipelined architecture: Allows column address changes every clock cycle and supports high-throughput access patterns in pipelined systems.
• Flexible burst control: Programmable burst lengths (1, 2, 4, 8, or full page) enable tuning for sequential or random access patterns.
• Integrated refresh and power modes: Auto refresh, self-refresh, and auto precharge modes simplify memory maintenance and power management.
• Standard 3.3 V supply range: Operates from 3.0 V to 3.6 V (3.3 V ±0.3 V), matching common legacy and commercial SDRAM power rails.
• Space-efficient package: 54-pin TSOP II package (400 mil / 10.16 mm) provides a compact surface-mount footprint for board-level integration.

Why Choose IC DRAM 512MBIT PAR 54TSOP II?

The MT48LC32M16A2P-75 L:C TR delivers a standardized 512 Mbit SDRAM solution with PC100/PC133 timing compatibility, a 3.3 V single-supply interface, and a compact 54-pin TSOP II package suitable for commercial-temperature designs. Its synchronous, pipelined architecture with internal banks and programmable burst options makes it suitable for systems needing predictable, parallel SDRAM behavior.

This device is appropriate for engineers specifying 512 Mbit SDRAM where deterministic timing, standard refresh modes (auto and self-refresh), and a 3.0 V–3.6 V supply envelope are required. Detailed electrical and timing specifications are provided in the product datasheet to support integration and validation in target designs.

Request a quote or submit an inquiry to obtain pricing, availability, and lead-time information for the MT48LC32M16A2P-75 L:C TR.