MT48LC32M16A2TG-75 IT:C TR

IC DRAM 512MBIT PAR 54TSOP II
Part Description

IC DRAM 512MBIT PAR 54TSOP II

Quantity 1,079 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size512 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page15 nsPackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level4 (72 Hours)RoHS ComplianceRoHS non-compliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT48LC32M16A2TG-75 IT:C TR – IC DRAM 512MBIT PAR 54TSOP II

The MT48LC32M16A2TG-75 IT:C TR is a 512 Mbit parallel SDRAM device organized as 32M × 16 with four internal banks. It implements fully synchronous SDR SDRAM architecture and is supplied in a 54-pin TSOP II (400 mil) package.

This device is suitable for systems that require a parallel SDRAM interface and PC100/PC133-compliant timing, offering 133 MHz clock operation, 5.4 ns access time, and industrial operating temperature capability.

Key Features

  • Memory Core and Organization 512 Mbit density arranged as 32M × 16 with 4 internal banks for concurrent row access/precharge management.
  • SDR SDRAM Architecture Fully synchronous operation with all signals registered on the positive edge of the system clock; internal pipelined operation allows column address changes every clock cycle.
  • Performance PC100- and PC133-compliant timing with a clock frequency of 133 MHz and an access time of 5.4 ns (speed grade -75).
  • Programmable Burst and Refresh Programmable burst lengths (1, 2, 4, 8, or full page), auto precharge, auto refresh, and self-refresh modes with 64 ms / 8192-cycle refresh.
  • Electrical Single 3.3 V ±0.3 V power supply (product data lists 3.0 V to 3.6 V) and LVTTL-compatible inputs and outputs.
  • Timing and Cycle Characteristics Write cycle time (word/page) of 15 ns and timing options documented for CAS latencies supporting CL = 3 at PC133 operation.
  • Package and Temperature 54-pin TSOP II (0.400", 10.16 mm width) plastic package; specified operating temperature range –40°C to +85°C (industrial).

Typical Applications

  • PC100/PC133-compliant systems — Use where standard PC100 or PC133 SDRAM timing compatibility is required.
  • Parallel SDRAM interface designs — For boards and controllers that implement a parallel SDRAM memory interface.
  • Industrial-temperature systems — Designs requiring operation across –40°C to +85°C can leverage the device's industrial temperature rating.
  • High-density memory modules — Applications needing 512 Mbit density in a 54-pin TSOP II footprint.

Unique Advantages

  • PC100/PC133 timing compliance: Ensures compatibility with systems and controllers that require standard SDRAM timing at up to 133 MHz.
  • High-density 32M × 16 organization: Provides 512 Mbit capacity in a single device, simplifying BOM for higher-memory designs.
  • Flexible burst and refresh modes: Programmable burst lengths plus auto and self-refresh options support varied access patterns and low-activity retention.
  • Industrial temperature rating: Specified –40°C to +85°C operation supports deployment in environments with wider temperature ranges.
  • Standard TSOP II package: 54-pin TSOP II (400 mil) package fits established board layouts and module form factors.
  • Single 3.3 V supply operation: Simplifies power rail requirements for systems designed around 3.3 V logic.

Why Choose IC DRAM 512MBIT PAR 54TSOP II?

The MT48LC32M16A2TG-75 IT:C TR delivers PC100/PC133-compliant SDRAM performance in a compact 54-pin TSOP II package with 512 Mbit density and a 32M × 16 organization. Its fully synchronous, pipelined architecture with internal banks and programmable burst modes supports demanding parallel-access memory designs.

With a 133 MHz clock option, 5.4 ns access time, and an industrial –40°C to +85°C rating, this Micron-manufactured SDRAM device is well suited to designs requiring standard SDRAM timing, higher memory density, and temperature robustness while maintaining a single 3.3 V power interface.

Request a quote or submit a quote to check availability and pricing for the MT48LC32M16A2TG-75 IT:C TR and to confirm lead times for your design requirements.

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