MT48LC32M16A2TG-75 IT:C TR
| Part Description |
IC DRAM 512MBIT PAR 54TSOP II |
|---|---|
| Quantity | 1,079 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 4 (72 Hours) | RoHS Compliance | RoHS non-compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT48LC32M16A2TG-75 IT:C TR – IC DRAM 512MBIT PAR 54TSOP II
The MT48LC32M16A2TG-75 IT:C TR is a 512 Mbit parallel SDRAM device organized as 32M × 16 with four internal banks. It implements fully synchronous SDR SDRAM architecture and is supplied in a 54-pin TSOP II (400 mil) package.
This device is suitable for systems that require a parallel SDRAM interface and PC100/PC133-compliant timing, offering 133 MHz clock operation, 5.4 ns access time, and industrial operating temperature capability.
Key Features
- Memory Core and Organization 512 Mbit density arranged as 32M × 16 with 4 internal banks for concurrent row access/precharge management.
- SDR SDRAM Architecture Fully synchronous operation with all signals registered on the positive edge of the system clock; internal pipelined operation allows column address changes every clock cycle.
- Performance PC100- and PC133-compliant timing with a clock frequency of 133 MHz and an access time of 5.4 ns (speed grade -75).
- Programmable Burst and Refresh Programmable burst lengths (1, 2, 4, 8, or full page), auto precharge, auto refresh, and self-refresh modes with 64 ms / 8192-cycle refresh.
- Electrical Single 3.3 V ±0.3 V power supply (product data lists 3.0 V to 3.6 V) and LVTTL-compatible inputs and outputs.
- Timing and Cycle Characteristics Write cycle time (word/page) of 15 ns and timing options documented for CAS latencies supporting CL = 3 at PC133 operation.
- Package and Temperature 54-pin TSOP II (0.400", 10.16 mm width) plastic package; specified operating temperature range –40°C to +85°C (industrial).
Typical Applications
- PC100/PC133-compliant systems — Use where standard PC100 or PC133 SDRAM timing compatibility is required.
- Parallel SDRAM interface designs — For boards and controllers that implement a parallel SDRAM memory interface.
- Industrial-temperature systems — Designs requiring operation across –40°C to +85°C can leverage the device's industrial temperature rating.
- High-density memory modules — Applications needing 512 Mbit density in a 54-pin TSOP II footprint.
Unique Advantages
- PC100/PC133 timing compliance: Ensures compatibility with systems and controllers that require standard SDRAM timing at up to 133 MHz.
- High-density 32M × 16 organization: Provides 512 Mbit capacity in a single device, simplifying BOM for higher-memory designs.
- Flexible burst and refresh modes: Programmable burst lengths plus auto and self-refresh options support varied access patterns and low-activity retention.
- Industrial temperature rating: Specified –40°C to +85°C operation supports deployment in environments with wider temperature ranges.
- Standard TSOP II package: 54-pin TSOP II (400 mil) package fits established board layouts and module form factors.
- Single 3.3 V supply operation: Simplifies power rail requirements for systems designed around 3.3 V logic.
Why Choose IC DRAM 512MBIT PAR 54TSOP II?
The MT48LC32M16A2TG-75 IT:C TR delivers PC100/PC133-compliant SDRAM performance in a compact 54-pin TSOP II package with 512 Mbit density and a 32M × 16 organization. Its fully synchronous, pipelined architecture with internal banks and programmable burst modes supports demanding parallel-access memory designs.
With a 133 MHz clock option, 5.4 ns access time, and an industrial –40°C to +85°C rating, this Micron-manufactured SDRAM device is well suited to designs requiring standard SDRAM timing, higher memory density, and temperature robustness while maintaining a single 3.3 V power interface.
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