MT48LC2M32B2TG-6:G TR

The MT48LC2M32B2TG-6:G TR is a 64 Mbit (2M × 32) SDR SDRAM device in a 86-pin TSOP II package designed for synchronous parallel memory applications. It provides a single 3.3 V ±0.3 V supply, a parallel memory interface and internal bank architecture for efficient row access management.

This commercial-temperature device (0°C to +70°C) targets systems requiring PC100-compliant SDRAM functionality with programmable burst lengths and selectable CAS latencies for flexible memory timing and burst transfer control.

Key Features

• Memory Architecture — 64 Mbit organized as 2M × 32 with 4 internal banks (512K × 32 × 4 banks) for pipelined row/column operations.
• SDR SDRAM Core — Fully synchronous operation with all signals registered on the positive edge of the system clock; PC100-compliant operation is supported.
• Timing and Performance — Rated for a clock frequency around 167 MHz (speed grade -6) with an access time listed as 5.5 ns and target RCD–RP–CL timing of 3–3–3 for the -6 speed grade.
• Programmable Burst and Latency — Programmable burst lengths of 1, 2, 4, 8 or full page and support for CAS latencies (CL) of 1, 2 and 3 to match system timing requirements.
• Refresh and Power Modes — Supports auto refresh and self-refresh modes; 4096-cycle refresh (64 ms for commercial) and concurrent auto precharge/auto refresh capabilities are provided.
• Interface and I/O — Parallel memory interface with LVTTL-compatible inputs and outputs for direct system integration.
• Voltage and Operating Range — Single supply operation from 3.0 V to 3.6 V; commercial operating temperature range of 0°C to +70°C (TA).
• Package — 86-pin TSOP II (400 mil / 10.16 mm width) plastic package for surface-mount applications.

Typical Applications

• PC100 and legacy memory systems — Drop-in SDRAM for systems requiring PC100-compliant synchronous parallel memory in a compact TSOP II package.
• Embedded controllers — System memory for embedded platforms that require a 64 Mbit SDRAM with programmable burst lengths and selectable CAS latency.
• Consumer electronics — Frame buffer and working memory in consumer devices operating within the commercial temperature range.
• Industrial/commercial equipment (commercial grade) — Commercial-temperature boards and modules where a 3.3 V SDRAM solution in an 86-pin TSOP II is required.

Unique Advantages

• Flexible timing options: Programmable burst lengths and CL=1,2,3 support allow designers to tune throughput and latency for specific system requirements.
• Banked architecture for throughput: Four internal banks and pipelined operation hide row access/precharge time and enable column address changes every clock cycle.
• Commercial-grade supply compatibility: Single 3.0 V–3.6 V supply simplifies power-rail design for 3.3 V systems.
• Compact surface-mount package: The 86-pin TSOP II (400 mil) package offers a compact footprint for dense PCB layouts while maintaining a parallel interface.
• Built-in refresh and low-power modes: Auto refresh and self-refresh support help maintain data integrity and reduce refresh management overhead in system firmware.

Why Choose MT48LC2M32B2TG-6:G TR?

The MT48LC2M32B2TG-6:G TR is positioned for designs that need a commercially rated 64 Mbit SDRAM with a parallel interface and flexible timing controls. Its 2M × 32 organization, 4-bank architecture and programmable burst/latency options make it suitable for systems that require synchronous, pipelined memory transfers at PC100-class performance levels.

This device is suitable for engineers designing compact, surface-mount memory solutions running on a 3.3 V supply and operating within standard commercial temperature ranges. It delivers predictable, verifiable specifications for projects requiring a proven SDRAM form factor and timing feature set.

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