MT48LC2M32B2TG-55:G

IC DRAM 64MBIT PAR 86TSOP II
Part Description

IC DRAM 64MBIT PAR 86TSOP II

Quantity 1,382 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5 nsGradeCommercial
Clock Frequency183 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization2M x 32
Moisture Sensitivity Level2 (1 Year)RoHS ComplianceRoHS non-compliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC2M32B2TG-55:G – IC DRAM 64MBIT PAR 86TSOP II

The MT48LC2M32B2TG-55:G is a 64 Mbit, x32 SDR SDRAM device in an 86-pin TSOP II package. It implements a 2M × 32 organization with internal banks and fully synchronous operation designed for systems requiring parallel SDRAM memory.

This device targets designs that require a PC100-compliant SDR SDRAM architecture with a single 3.3 V supply, programmable burst lengths and low-latency synchronous access at a clock frequency of 183 MHz.

Key Features

  • Architecture: 2M × 32 organization (512K × 32 × 4 banks) providing 64 Mbit of SDRAM in a parallel memory format with internal banks to hide row access/precharge.
  • SDR SDRAM Core: Fully synchronous operation with all signals registered on the positive edge of the system clock and internal pipelined operation allowing column addresses to change every clock cycle.
  • Performance: Clock frequency specified at 183 MHz (speed grade -55) with timing parameters for RCD, RP and CL at 16.5 ns for the -55 grade.
  • Programmable Burst & Latency: Supports programmable burst lengths (1, 2, 4, 8, or full page) and CAS latency (CL) options of 1, 2 and 3 for flexible throughput/latency trade-offs.
  • Refresh & Power Management: Auto refresh and auto precharge modes, plus self-refresh support; devices include 4096-cycle refresh options documented in the datasheet.
  • Logic & I/O: LVTTL-compatible inputs and outputs and a single 3.3 V ±0.3 V power supply (product voltage range listed as 3.0 V to 3.6 V).
  • Package & Mounting: 86-pin TSOP II (400 mil / 10.16 mm width) package (86-TFSOP) for surface-mount PCB integration.
  • Operating Range: Commercial temperature operation specified from 0 °C to +70 °C (TA).

Typical Applications

  • PC100-compliant memory systems: Implementations requiring PC100-class SDRAM timing and behavior can use this device in parallel SDRAM designs.
  • Embedded systems requiring parallel SDRAM: Designs that need a 64 Mbit x32 SDRAM footprint and TSOP II mounting for board-level memory expansion.
  • Systems needing programmable burst access: Applications that benefit from selectable burst lengths and CAS latency settings for tuning throughput and latency.

Unique Advantages

  • Flexible timing configuration: Programmable burst lengths and CL = 1, 2, 3 give designers control over performance and latency to match system timing requirements.
  • Synchronous, pipelined operation: Fully synchronous design with internal pipelining supports column address changes every clock cycle for steady data flow under system clock control.
  • Standard 3.3 V supply: Single 3.3 V ±0.3 V supply simplifies power rail design in legacy and contemporary systems that use standard SDRAM voltages.
  • Compact surface-mount footprint: 86-pin TSOP II package (400 mil) provides a compact form factor for board-level memory integration in space-constrained designs.
  • Built-in refresh and power modes: Auto refresh, auto precharge and self-refresh capabilities reduce host refresh management and support lower-power idle states.

Why Choose MT48LC2M32B2TG-55:G?

The MT48LC2M32B2TG-55:G delivers a straightforward, standards-based SDR SDRAM option with a 2M × 32 organization and PC100-class timing in a compact 86-pin TSOP II package. Its combination of synchronous pipelined operation, programmable burst lengths and selectable CAS latencies makes it suitable for designs that require predictable parallel memory behavior and configurable performance.

This Micron device is appropriate for designers specifying a 64 Mbit, x32 SDRAM with a 3.3 V supply and commercial temperature range; it provides documented timing parameters (183 MHz target for the -55 speed grade) and integrated refresh modes to support consistent system operation over the device’s operating range.

Request a quote or contact sales to discuss availability, pricing and lead time for the MT48LC2M32B2TG-55:G.

Request a Quote

















    No file selected



    Our team will respond within 24 hours.


    I agree to receive newsletters and promotional emails. I can unsubscribe at any time.

    Certifications and Membership
    NQA AS9100 CMYK ANAB
    NQA AS9100 ANAB Badge
    ESD2020 Badge
    ESD2020 Association Badge
    GIDEP Badge
    GIDEP Badge
    Suntsu ERAI MemberVerification
    Suntsu ERAI Member Verification
    Available Shipping Methods
    FedEx
    UPS
    DHL
    Accepted Payment Methods
    American Express
    American Express
    Discover
    Discover
    MasterCard
    MasterCard
    Visa
    Visa
    UnionPay
    UnionPay
    Featured Products
    Latest News
    keyboard_arrow_up