MT48LC2M32B2TG-55:G
| Part Description |
IC DRAM 64MBIT PAR 86TSOP II |
|---|---|
| Quantity | 1,382 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 86-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5 ns | Grade | Commercial | ||
| Clock Frequency | 183 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 86-TFSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 2M x 32 | ||
| Moisture Sensitivity Level | 2 (1 Year) | RoHS Compliance | RoHS non-compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC2M32B2TG-55:G – IC DRAM 64MBIT PAR 86TSOP II
The MT48LC2M32B2TG-55:G is a 64 Mbit, x32 SDR SDRAM device in an 86-pin TSOP II package. It implements a 2M × 32 organization with internal banks and fully synchronous operation designed for systems requiring parallel SDRAM memory.
This device targets designs that require a PC100-compliant SDR SDRAM architecture with a single 3.3 V supply, programmable burst lengths and low-latency synchronous access at a clock frequency of 183 MHz.
Key Features
- Architecture: 2M × 32 organization (512K × 32 × 4 banks) providing 64 Mbit of SDRAM in a parallel memory format with internal banks to hide row access/precharge.
- SDR SDRAM Core: Fully synchronous operation with all signals registered on the positive edge of the system clock and internal pipelined operation allowing column addresses to change every clock cycle.
- Performance: Clock frequency specified at 183 MHz (speed grade -55) with timing parameters for RCD, RP and CL at 16.5 ns for the -55 grade.
- Programmable Burst & Latency: Supports programmable burst lengths (1, 2, 4, 8, or full page) and CAS latency (CL) options of 1, 2 and 3 for flexible throughput/latency trade-offs.
- Refresh & Power Management: Auto refresh and auto precharge modes, plus self-refresh support; devices include 4096-cycle refresh options documented in the datasheet.
- Logic & I/O: LVTTL-compatible inputs and outputs and a single 3.3 V ±0.3 V power supply (product voltage range listed as 3.0 V to 3.6 V).
- Package & Mounting: 86-pin TSOP II (400 mil / 10.16 mm width) package (86-TFSOP) for surface-mount PCB integration.
- Operating Range: Commercial temperature operation specified from 0 °C to +70 °C (TA).
Typical Applications
- PC100-compliant memory systems: Implementations requiring PC100-class SDRAM timing and behavior can use this device in parallel SDRAM designs.
- Embedded systems requiring parallel SDRAM: Designs that need a 64 Mbit x32 SDRAM footprint and TSOP II mounting for board-level memory expansion.
- Systems needing programmable burst access: Applications that benefit from selectable burst lengths and CAS latency settings for tuning throughput and latency.
Unique Advantages
- Flexible timing configuration: Programmable burst lengths and CL = 1, 2, 3 give designers control over performance and latency to match system timing requirements.
- Synchronous, pipelined operation: Fully synchronous design with internal pipelining supports column address changes every clock cycle for steady data flow under system clock control.
- Standard 3.3 V supply: Single 3.3 V ±0.3 V supply simplifies power rail design in legacy and contemporary systems that use standard SDRAM voltages.
- Compact surface-mount footprint: 86-pin TSOP II package (400 mil) provides a compact form factor for board-level memory integration in space-constrained designs.
- Built-in refresh and power modes: Auto refresh, auto precharge and self-refresh capabilities reduce host refresh management and support lower-power idle states.
Why Choose MT48LC2M32B2TG-55:G?
The MT48LC2M32B2TG-55:G delivers a straightforward, standards-based SDR SDRAM option with a 2M × 32 organization and PC100-class timing in a compact 86-pin TSOP II package. Its combination of synchronous pipelined operation, programmable burst lengths and selectable CAS latencies makes it suitable for designs that require predictable parallel memory behavior and configurable performance.
This Micron device is appropriate for designers specifying a 64 Mbit, x32 SDRAM with a 3.3 V supply and commercial temperature range; it provides documented timing parameters (183 MHz target for the -55 speed grade) and integrated refresh modes to support consistent system operation over the device’s operating range.
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