MT48LC2M32B2TG-55:G TR

The MT48LC2M32B2TG-55:G TR is a 64 Mbit SDR SDRAM organized as 2M × 32 with a parallel memory interface in an 86‑pin TSOP II package. It implements a fully synchronous, pipelined architecture with four internal banks and programmable burst lengths to support predictable, cycle-aligned memory transfers.

Designed for systems that require a 64 Mbit ×32 SDRAM footprint, the device delivers operation at a clock frequency of 183 MHz, supports CAS latencies of 1, 2 and 3, and operates from a single 3.0 V–3.6 V supply across a 0 °C to +70 °C ambient range.

Key Features

• Core architecture  Fully synchronous SDR SDRAM with all signals registered on the positive edge of the system clock and internal pipelined operation allowing column address changes every clock cycle.
• Memory organization  64 Mbit capacity organized as 2M × 32 with four internal banks (512K × 32 × 4 banks).
• Performance & timing  Target clock frequency 183 MHz (speed grade -55) with support for CAS latency (CL) = 1, 2, 3; timing target for -55 is 3-3-3 with 16.5 ns RCD/RP/CL.
• Programmable burst lengths  Selectable burst lengths of 1, 2, 4, 8 or full page to match access patterns and bus efficiency requirements.
• Refresh and power modes  Auto refresh and self-refresh modes supported; 4096-cycle refresh with 64 ms (commercial) timing as specified.
• Interface & I/O  Parallel memory interface with LVTTL-compatible inputs and outputs for standard logic-level integration.
• Supply & power  Single supply operation at 3.3 V ±0.3 V (listed supply range 3.0 V–3.6 V).
• Package & temperature  86‑pin TSOP II (400 mil / 10.16 mm width) standard package; commercial operating range 0 °C to +70 °C (TA).

Typical Applications

• Board-level SDRAM memory  Provides 64 Mbit ×32 parallel SDRAM in an 86‑pin TSOP II footprint for systems requiring synchronous DRAM.
• Legacy SDR system upgrades  Drop-in compatible memory for designs specifying 2M × 32 SDR SDRAM with standard timing and supply requirements.
• Embedded system buffers  Use as a shared data buffer where programmable burst lengths and pipelined bank operation improve throughput.

Unique Advantages

• Predictable synchronous operation: Positive-edge clocked, fully synchronous design ensures consistent timing behavior across system clocks.
• Flexible access patterns: Programmable burst lengths and internal bank architecture allow efficient handling of both short and burst transfers.
• Standard voltage compatibility: Single 3.3 V supply range (3.0 V–3.6 V) simplifies power rail design in existing 3.3 V systems.
• Compact package: 86‑pin TSOP II package provides a high-density memory option in a standardized footprint.
• Defined timing grade: -55 speed grade with 183 MHz clock targeting 3-3-3 timing (16.5 ns RCD/RP/CL) for known performance characteristics.

Why Choose MT48LC2M32B2TG-55:G TR?

The MT48LC2M32B2TG-55:G TR pairs a 64 Mbit ×32 SDRAM organization with a fully synchronous, pipelined architecture and selectable burst modes to deliver predictable, board-level memory performance. Its -55 timing grade and LVTTL-compatible I/O simplify integration into systems designed around a 3.3 V supply and 86‑pin TSOP II form factor.

This device is well suited to designs that require standardized SDR SDRAM behavior, clear timing targets, and commercial temperature operation. It offers a balanced combination of performance, package density, and interface compatibility for engineers specifying parallel SDRAM memory in established 3.3 V systems.

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