MT48LC2M32B2TG-6 IT:G

The MT48LC2M32B2TG-6 IT:G is a 64 Mbit, x32 SDR SDRAM device configured as 2M × 32 (512K × 32 × 4 banks) in an 86-pin TSOP II package. It implements fully synchronous, pipelined SDRAM architecture with a parallel memory interface for systems requiring organized, high-throughput volatile memory.

Designed to operate from a 3.0 V to 3.6 V supply and across an operating ambient range of −40°C to +85°C (TA), the device provides programmable burst control, selectable CAS latencies, and built-in refresh/precharge features for reliable DRAM operation in commercial and industrial applications.

Key Features

• Core / Memory Organization 64 Mbit SDRAM organized as 2M × 32 (512K × 32 × 4 banks) to support banked memory access and internal precharge.
• Synchronous, Pipelined Operation Fully synchronous design with all signals registered on the positive edge of the system clock and internal pipelined operation that allows column address changes every clock cycle.
• Performance & Timing Clock frequency listed at 167 MHz with an access time of 5.5 ns; supports CAS latency (CL) values of 1, 2, and 3 and programmable burst lengths of 1, 2, 4, 8, or full page.
• Refresh & Auto Precharge Auto refresh and auto precharge modes are supported; datasheet specifies 64 ms / 4096-cycle refresh for commercial and industrial options and additional refresh timing options in the product family.
• Interface & Signaling Parallel memory interface with LVTTL-compatible inputs and outputs for standard SDRAM signal levels.
• Power Single 3.3 V ±0.3 V power supply (3.0 V to 3.6 V specified) for device operation.
• Write Cycle Performance Write cycle (word page) timing specified at 12 ns.
• Package & Temperature 86-pin TSOP II (400 mil / 0.400", 10.16 mm width) package; operating ambient temperature range of −40°C to +85°C (TA).
• Standards & Compliance PC100-compliant timing option is listed among the device family’s supported configurations.

Unique Advantages

• Banked SDRAM Architecture: Internal 4-bank organization enables overlapping row access and precharge to improve effective throughput for burst transfers.
• Flexible Burst and Latency Control: Programmable burst lengths and support for multiple CAS latencies let designers match timing to system requirements.
• Industry-Standard Signaling and Supply: LVTTL-compatible I/O and a single 3.3 V ±0.3 V supply simplify interface design with common system logic levels.
• Robust Thermal Range: Specified operation from −40°C to +85°C (TA) supports deployment across commercial and industrial ambient conditions.
• Compact Standard Package: The 86-pin TSOP II form factor (400 mil) provides a space-efficient, supplier-standard package for board-level integration.

Why Choose MT48LC2M32B2TG-6 IT:G?

The MT48LC2M32B2TG-6 IT:G positions itself as a straightforward SDRAM building block for designs that require 64 Mbit of parallel volatile memory with configurable burst behavior and selectable CAS latency. Its fully synchronous, pipelined architecture and LVTTL-compatible interface make it suitable for systems that rely on predictable timing and banked memory access.

This device is suited to designs needing a proven, standardized 86-pin TSOP II package, a 3.0–3.6 V supply domain, and operation across −40°C to +85°C ambient. The combination of programmable timing features and internal refresh/precharge modes provides practical flexibility for integration into established SDRAM-based memory subsystems.

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