MT48LC2M32B2TG-6 IT:G TR

IC DRAM 64MBIT PAR 86TSOP II
Part Description

IC DRAM 64MBIT PAR 86TSOP II

Quantity 1,295 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.5 nsGradeIndustrial
Clock Frequency167 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page12 nsPackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization2M x 32
Moisture Sensitivity Level2 (1 Year)RoHS ComplianceRoHS non-compliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC2M32B2TG-6 IT:G TR – IC DRAM 64MBIT PAR 86TSOP II

The MT48LC2M32B2TG-6 IT:G TR is a 64 Mbit volatile SDRAM organized as 2M × 32 with a parallel memory interface in an 86‑pin TSOP II package. It implements SDR SDRAM architecture with internal pipelined operation, four banks and synchronous, clock‑referenced signaling.

Designed for systems requiring PC100‑class SDRAM behavior and industrial temperature operation (−40°C to +85°C), the device offers programmable burst lengths, selectable CAS latencies and standard 3.3 V class supply operation (3.0 V–3.6 V).

Key Features

  • Core / Architecture  SDR SDRAM with fully synchronous operation and internal pipelined access; internal four‑bank architecture for overlapping row operations.
  • Memory Organization  64 Mbit density arranged as 2M × 32 (512K × 32 × 4 banks) providing wide ×32 data paths for parallel system interfaces.
  • Performance & Timing  Specified clock frequency 167 MHz with an access time of 5.5 ns; supports CAS latencies 1, 2 and 3 and programmable burst lengths (1, 2, 4, 8 or full page).
  • Refresh & Power Modes  Auto refresh and self‑refresh support with 4K refresh cycles; 64 ms / 4096‑cycle refresh noted for commercial and industrial ranges.
  • Voltage & I/O  Single 3.3 V ±0.3 V power supply range (3.0 V–3.6 V) with LVTTL‑compatible inputs and outputs as specified in the device documentation.
  • Package & Temperature  86‑pin TSOP II (0.400", 10.16 mm width) plastic package; industrial temperature grade operation from −40°C to +85°C (TA).
  • System Compatibility  PC100‑compliant SDRAM timing and command set, with standard SDRAM commands (ACTIVE, READ, WRITE, PRECHARGE, REFRESH, LOAD MODE REGISTER).

Typical Applications

  • Industrial Embedded Systems  Industrial temperature range (−40°C to +85°C) supports deployment in control and automation platforms requiring extended ambient operation.
  • PC100‑Class Memory Subsystems  PC100 compliance and standard SDRAM timing make this device suitable for legacy PC100‑class designs and compatible embedded host controllers.
  • Board‑Level Parallel DRAM  ×32 parallel interface and 86‑pin TSOP II packaging are suited to board‑level memory implementations where a wide data bus and compact TSOP footprint are required.

Unique Advantages

  • Wide ×32 Data Path:  Reduces the number of devices required for wide‑bus memory implementations compared with narrower devices.
  • Industrial Temperature Rating:  Specified operation from −40°C to +85°C enables use in temperature‑sensitive deployments without additional thermal qualification.
  • Flexible Burst and Latency Options:  Programmable burst lengths and selectable CAS latencies (1, 2, 3) allow tuning for system throughput and latency tradeoffs.
  • Standard 3.3 V Supply:  Operates within a 3.0 V–3.6 V supply window (3.3 V ±0.3 V), matching common legacy SDRAM power rails for straightforward integration.
  • Compact TSOP II Package:  86‑pin TSOP II (0.400", 10.16 mm width) offers a compact footprint for board‑level memory placement while maintaining pinout compatibility for parallel SDRAM interfaces.

Why Choose IC DRAM 64MBIT PAR 86TSOP II?

The MT48LC2M32B2TG-6 IT:G TR is positioned for systems that require a compact, parallel‑interface SDRAM device with industrial temperature capability and PC100‑class timing. Its 2M × 32 organization and ×32 data path provide a straightforward memory solution for board‑level integration where a wide data bus and standard SDRAM command set are required.

For designs that need configurable burst behavior, selectable CAS latency and standard 3.3 V operation, this device delivers a verifiable specification set and package option suitable for industrial and legacy PC100‑class applications.

Request a quote or submit a sales inquiry to obtain pricing, lead‑time and availability for MT48LC2M32B2TG-6 IT:G TR.

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