MT48LC2M32B2TG-5:G

IC DRAM 64MBIT PAR 86TSOP II
Part Description

IC DRAM 64MBIT PAR 86TSOP II

Quantity 295 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time4.5 nsGradeCommercial
Clock Frequency200 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization2M x 32
Moisture Sensitivity Level2 (1 Year)RoHS ComplianceRoHS non-compliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC2M32B2TG-5:G – IC DRAM 64MBIT PAR 86TSOP II

The MT48LC2M32B2TG-5:G is a 64 Mbit synchronous DRAM (SDR SDRAM) organized as 2M × 32 with a parallel memory interface in an 86‑pin TSOP II package. It implements a fully synchronous architecture with internal pipelined operation and multiple internal banks to improve data throughput for systems using PC100-class SDRAM.

Designed for commercial temperature operation, this device targets embedded and system memory applications that require a compact TSOP II footprint, a single 3.3 V supply range, and configurable burst and latency options to match system timing requirements.

Key Features

  • Core Architecture  Fully synchronous SDR SDRAM with all signals registered on the positive edge of the system clock and internal pipelined operation for column-address changes every clock cycle.
  • Memory Organization  64 Mbit capacity organized as 2M × 32 (512K × 32 × 4 banks), providing four internal banks to hide row access and precharge operations.
  • Performance / Timing  5 ns (200 MHz) speed grade (-5) with listed access time of 4.5 ns and support for CAS latencies (CL) of 1, 2, and 3.
  • Burst and Command Flexibility  Programmable burst lengths (1, 2, 4, 8, or full page), auto precharge, auto refresh, and self‑refresh capability (self‑refresh not available on AT devices as noted in product documentation).
  • Power and I/O  Single 3.3 V power supply (3.3 V ±0.3 V; spec range 3.0 V–3.6 V) with LVTTL‑compatible inputs and outputs.
  • Refresh  Auto refresh support with commercial refresh timing of 64 ms / 4096 cycles as specified for the device.
  • Package and Temperature  86‑pin TSOP II (0.400", 10.16 mm width) package; commercial operating temperature range 0°C to +70°C.
  • Interface  Parallel memory interface suitable for systems designed around PC100-class SDRAM timing and signaling.

Typical Applications

  • PC100-class systems  Memory subsystem implementations where PC100‑compliant SDRAM timing and a 200 MHz speed grade are required.
  • Embedded system memory  System DRAM for embedded designs that need a 64 Mbit parallel SDRAM in a compact 86‑pin TSOP II package.
  • Commercial electronics  Consumer and commercial devices operating within 0°C to +70°C that require synchronous DRAM with programmable burst and latency options.
  • Board-level memory expansion  Add-on or replacement memory in designs using standard parallel SDRAM interfaces and LVTTL signaling.

Unique Advantages

  • PC100-compliant 200 MHz speed grade  Provides a defined 5 ns cycle time (-5) for designs targeting PC100-class timing.
  • Flexible timing and bursts  Programmable burst lengths and support for CL = 1, 2, 3 let system designers match memory behavior to system timing and throughput needs.
  • Banked architecture for throughput  Four internal banks and pipelined operation help hide row access and precharge latency, improving effective data transfer rates.
  • Standard 3.3 V supply and LVTTL I/O  Simplifies interface design with a single supply range (3.0 V–3.6 V) and LVTTL‑compatible signaling.
  • Compact TSOP II package  86‑pin TSOP II (400 mil) footprint for space‑constrained board designs while retaining a parallel interface.
  • Commercial temperature rating  Specified for 0°C to +70°C operation for use in a wide range of commercial applications.

Why Choose MT48LC2M32B2TG-5:G?

The MT48LC2M32B2TG-5:G combines a compact 86‑pin TSOP II package with a fully synchronous SDRAM architecture and a 200 MHz speed grade to serve PC100-class and embedded memory requirements. Its programmable burst lengths, CAS latency options, and four internal banks provide designers with the flexibility to tune performance for specific system timing and throughput needs.

This device is suited for commercial systems that require a 64 Mbit parallel SDRAM with a standard 3.3 V supply, LVTTL I/O compatibility, and defined refresh and timing characteristics. It offers a clear specification set for procurement and integration into board-level memory subsystems.

Request a quote or submit an inquiry to our sales team for pricing, availability, and lead-time information for MT48LC2M32B2TG-5:G.

Request a Quote

















    No file selected



    Our team will respond within 24 hours.


    I agree to receive newsletters and promotional emails. I can unsubscribe at any time.

    Certifications and Membership
    NQA AS9100 CMYK ANAB
    NQA AS9100 ANAB Badge
    ESD2020 Badge
    ESD2020 Association Badge
    GIDEP Badge
    GIDEP Badge
    Suntsu ERAI MemberVerification
    Suntsu ERAI Member Verification
    Available Shipping Methods
    FedEx
    UPS
    DHL
    Accepted Payment Methods
    American Express
    American Express
    Discover
    Discover
    MasterCard
    MasterCard
    Visa
    Visa
    UnionPay
    UnionPay
    Featured Products
    Latest News
    keyboard_arrow_up