MT48LC2M32B2P-7 IT:G TR
| Part Description |
IC DRAM 64MBIT PAR 86TSOP II |
|---|---|
| Quantity | 81 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 86-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5.5 ns | Grade | Industrial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 14 ns | Packaging | 86-TFSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 2M x 32 | ||
| Moisture Sensitivity Level | 2 (1 Year) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC2M32B2P-7 IT:G TR – IC DRAM 64Mbit Parallel 86‑TSOP II
The MT48LC2M32B2P-7 IT:G TR is a 64 Mbit SDR SDRAM organized as 2M × 32 with a parallel memory interface, supplied in an 86‑pin TSOP II (400 mil) package. It implements a fully synchronous SDRAM architecture with internal banks and programmable burst operation.
This device targets designs that require a compact, parallel SDRAM solution with industrial temperature capability and standard TSOP II packaging for surface-mount mounting and board-level memory subsystems.
Key Features
- Core / Architecture Fully synchronous SDR SDRAM with internal pipelined operation and multiple internal banks for improved row access and precharge handling.
- Memory Organization 64 Mbit capacity organized as 2M × 32 (512K × 32 × 4 banks), providing a wide 32‑bit data path for parallel systems.
- Timing and Performance Clock frequency specified at 143 MHz for the -7 speed grade and an access time of 5.5 ns; supports CAS latency (CL) settings of 1, 2 and 3 and programmable burst lengths of 1, 2, 4, 8 or full page.
- Refresh and Power Supports auto refresh and self refresh (self refresh not available on AT devices); single 3.3 V ±0.3 V power supply range (3.0 V–3.6 V).
- Interface and Compatibility Parallel memory interface with LVTTL‑compatible inputs/outputs and support for PC100 timing compliance as indicated in the datasheet options.
- Package and Mounting 86‑pin TSOP II (0.400", 10.16 mm width) plastic package (surface‑mount), supplier device package listed as 86‑TSOP II.
- Operating Range Specified operating ambient temperature range of −40 °C to +85 °C (TA) for industrial operation.
Typical Applications
- PC100‑class memory subsystems Use in systems targeting PC100 timing and synchronous DRAM operation where a 32‑bit parallel SDRAM device is required.
- Embedded parallel memory boards Fits board‑level designs needing a 64 Mbit parallel SDRAM in an industry‑standard TSOP II footprint.
- Industrial electronics Suitable for industrial applications that require operation across −40 °C to +85 °C ambient temperature.
Unique Advantages
- 32‑bit parallel organization: Provides a wide data bus (2M × 32) for straightforward integration into parallel memory systems.
- Flexible timing and burst modes: Programmable burst lengths and CL = 1, 2, 3 support allow tuning for system throughput and latency requirements.
- Industry‑standard packaging: 86‑pin TSOP II (400 mil) simplifies replacement and board‑level routing in existing TSOP footprints.
- Industrial temperature performance: Rated for −40 °C to +85 °C (TA), enabling use in temperature‑sensitive embedded and industrial equipment.
- Simple power requirements: Single 3.3 V ±0.3 V supply window (3.0 V–3.6 V) eases power‑rail design and compatibility with common system voltages.
Why Choose MT48LC2M32B2P-7 IT:G TR?
The MT48LC2M32B2P-7 IT:G TR delivers a compact, parallel SDRAM solution with a 64 Mbit capacity, 2M × 32 organization and industry-standard 86‑TSOP II packaging. Its synchronous architecture, internal banking and configurable burst and CAS settings provide predictable timing options for parallel memory subsystems.
With industrial temperature support and a single 3.3 V supply range, this Micron SDRAM part is suited to designs that require a proven, surface‑mount parallel memory device in a standard footprint, while enabling designers to tune latency and burst behavior to match system requirements.
Request a quote or submit a pricing and availability inquiry to obtain lead‑time and ordering information for the MT48LC2M32B2P-7 IT:G TR.