MT48LC2M32B2P-6A:J TR

IC DRAM 64MBIT PAR 86TSOP II
Part Description

IC DRAM 64MBIT PAR 86TSOP II

Quantity 1,059 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency167 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page12 nsPackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization2M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC2M32B2P-6A:J TR – IC DRAM 64MBIT PAR 86TSOP II

The MT48LC2M32B2P-6A:J TR is a 64 Mbit, parallel SDR SDRAM organized as 2M × 32 with internal bank architecture and a standard 86-pin TSOP II package. It is a fully synchronous DRAM device designed for systems requiring PC100-compliant SDRAM performance with a single 3.3 V supply window.

Key characteristics include a 167 MHz clock frequency (‑6A speed grade), programmable burst lengths, support for CAS latencies 1, 2 and 3, and commercial operating temperature of 0 °C to +70 °C—making it suitable for commercial synchronous memory applications that use a parallel memory interface.

Key Features

  • Core / Architecture  Fully synchronous SDR SDRAM with internal pipelined operation and internal banks for hiding row access and precharge; configured as 2M × 32.
  • Memory Capacity & Organization  64 Mbit total memory, organized as 2M × 32 (512K × 32 × 4 banks).
  • Performance & Timing  167 MHz clock frequency (‑6A speed grade) with access time listed at 5.4 ns and write cycle time (word/page) of 12 ns; supports CAS latency (CL) values of 1, 2 and 3 and programmable burst lengths (1, 2, 4, 8, or full page).
  • Refresh & Power Management  Auto refresh and self refresh modes are supported; note self refresh is not available on AT devices. Typical refresh counts and modes are provided in the datasheet.
  • Power Supply  Single‑supply operation—3.3 V nominal (3.0 V to 3.6 V specified).
  • Package  86‑pin TSOP II (400 mil, 10.16 mm width) housing for PCB surface-mount deployment.
  • Operating Range  Commercial temperature rating: 0 °C to +70 °C (TA).
  • Standards Compatibility  PC100‑compliant SDR SDRAM implementation with LVTTL‑compatible inputs and outputs as documented in the datasheet.

Typical Applications

  • PC100‑compliant memory subsystems  Used where PC100 SDRAM compatibility is required for parallel SDRAM designs.
  • Synchronous memory designs  Suited to systems that require fully synchronous SDRAM operation with programmable burst lengths and selectable CAS latencies.
  • Board-level replacements  Designed for board-level use requiring an 86‑pin TSOP II package and 3.3 V single-supply operation.
  • Commercial temperature applications  Targets commercial environments operating between 0 °C and +70 °C.

Unique Advantages

  • PC100-compliant implementation: Meets PC100 SDRAM specifications for designers targeting legacy PC100 performance points.
  • Flexible timing control: Supports CAS latencies 1–3 and programmable burst lengths (1, 2, 4, 8, full page) for tuning performance to system requirements.
  • Banked architecture for hidden latency: Internal banks allow row access and precharge hiding to improve effective throughput in pipelined operation.
  • Standardized package: 86‑pin TSOP II (400 mil) package simplifies board integration where this footprint is required.
  • Single-supply operation: Operates from 3.0 V to 3.6 V (nominal 3.3 V), matching common system power rails.
  • Commercial temperature rating: Specified for 0 °C to +70 °C operation to support commercial-grade deployments.

Why Choose IC DRAM 64MBIT PAR 86TSOP II?

The MT48LC2M32B2P-6A:J TR delivers a compact, industry‑standard SDR SDRAM solution with a 2M × 32 organization, PC100 compliance, and a 167 MHz (‑6A) speed grade—offering designers predictable, synchronous memory behavior with flexible timing and burst control. Its 86‑pin TSOP II package and single‑supply 3.3 V operation simplify integration into systems that require parallel SDRAM modules within a commercial temperature range.

This device is well suited for engineers and procurement teams specifying commercial synchronous DRAM for existing parallel‑memory architectures where documented timing options, refresh modes and package form factor are important for system compatibility and reliability.

If you would like pricing, lead-time, or a formal quote for MT48LC2M32B2P-6A:J TR, please submit a request for a quote or contact sales for assistance.

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