MT48LC4M16A2P-6:G

The MT48LC4M16A2P-6:G is a 64 Mbit synchronous DRAM (SDRAM) organized as 4M x 16 with a parallel memory interface in a 54‑pin TSOP II (0.400", 10.16 mm width) package. It implements internal pipelined operation and banked architecture to support programmable burst lengths, auto/precharge and refresh modes.

This commercial-temperature SDRAM (0°C to +70°C) operates from a 3.0 V to 3.6 V supply and is specified with a 167 MHz clock frequency and a 5.5 ns access time, making it suitable for systems that require parallel SDRAM memory with documented timing and refresh behaviors.

Key Features

• Memory Architecture Organized as 4M × 16 with four internal banks; 64 Mbit total DRAM capacity and parallel data interface.
• SDRAM Core Fully synchronous operation with internal pipelined operation and programmable burst lengths (1, 2, 4, 8, or full page) as defined in the product datasheet.
• Timing and Performance Clock frequency specified at 167 MHz with an access time of 5.5 ns and a write cycle time (word/page) of 12 ns for deterministic timing in system designs.
• Power Single supply operation from 3.0 V to 3.6 V (documented ±0.3 V tolerance in datasheet), with LVTTL‑compatible inputs and outputs.
• Refresh and Power Modes Supports auto refresh, auto precharge (including concurrent auto precharge), and both standard and low power self refresh modes; 4,096-cycle refresh (64 ms) documented.
• Package and Mounting 54‑pin TSOP II (400 mil / 10.16 mm width) plastic package for surface mounting and compact board-level integration.
• Operating Range Commercial temperature rating of 0°C to +70°C as specified for this device variant.

Typical Applications

• Embedded Memory Subsystems Used as parallel SDRAM storage in embedded platforms that require a 64 Mbit x16 DRAM with documented timing and refresh behavior.
• Consumer Electronics Provides synchronous DRAM capacity for consumer devices operating in commercial temperature ranges and using parallel memory interfaces.
• Industrial Control Equipment Suitable for control and I/O modules where a 54‑pin TSOP II packaged SDRAM module is needed within the 0°C to +70°C operating window.

Unique Advantages

• Banked SDRAM Architecture: Internal banks and pipelined operation enable changing column addresses each clock cycle to help maintain throughput within the documented timing parameters.
• Programmable Burst Lengths: Selectable burst lengths (1, 2, 4, 8 or full page) allow flexibility for different access patterns and system controllers.
• Standard Supply Voltage: Single +3.3 V (3.0–3.6 V) supply simplifies power domain design for systems using common 3.3 V rails.
• Compact TSOP II Package: 54‑pin TSOP II (0.400" / 10.16 mm) package provides a compact surface‑mount form factor for board-level integration.
• Documented Refresh and Self-Refresh Modes: Auto refresh and self‑refresh modes (standard and low power) with a 4,096‑cycle (64 ms) refresh interval reduce system-level memory management complexity.
• Commercial Temperature Specification: Specified 0°C to +70°C operating range for designs targeting commercial-environment deployments.

Why Choose MT48LC4M16A2P-6:G?

The MT48LC4M16A2P-6:G provides a documented, parallel SDRAM solution in a compact 54‑pin TSOP II package with 64 Mbit capacity organized as 4M × 16. Its synchronous, banked architecture with programmable bursts and supported refresh/self‑refresh modes delivers predictable timing and memory behavior for designs that require explicit SDRAM control.

Backed by Micron’s product documentation, this device is suited for commercial-temperature systems that need a 3.0–3.6 V, 64 Mbit parallel SDRAM with specified access and cycle timings. It is appropriate for engineers specifying board-level SDRAM where package, timing, and refresh characteristics are primary selection criteria.

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